OSG60R180FF

Enhancement Mode N-Channel Power MOSFET

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding
low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide
superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize
switching loss. It is tailored for high power density applications to meet the highest efficiency
standards.

Features
 Low RDS(ON) & FOM
 Extremely low switching loss
 Excellent stability and uniformity

Applications
 PC power
 LED lighting
 Telecom power
 Server power
 EV Charger
 Solar/UPS

Key Performance Parameters

Parameter Value Unit
VDS, min @ Tj(max) 650 V
ID, pulse 60 A
RDS(ON) , max @ VGS=10V 180 mΩ
Qg 23.3 nC

Marking Information
Product Name Package Marking
OSG60R180FF TO220F OSG60R180F

Package & Pin Information

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter Symbol Value Unit

Drain-source voltage VDS 600 V

Gate-source voltage VGS ±30 V

Continuous drain current1), TC=25 °C 20

ID A
Continuous drain current1), TC=100 °C 12.5

Pulsed drain current2), TC=25 °C ID, pulse 60 A

Continuous diode forward current1), TC=25 °C IS 20 A

Diode pulsed current2), TC=25 °C IS, pulse 60 A

Power dissipation3), TC=25 °C PD 34 W

Single pulsed avalanche energy5) EAS 600 mJ

MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns

Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns

Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
Parameter Symbol Value Unit

Thermal resistance, junction-case RθJC 3.67 °C/W

Thermal resistance, junction-ambient4) RθJA 62.5 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter Symbol Min. Typ. Max. Unit Test condition

600 VGS=0 V, ID=250 uA

Drain-source
BVDSS V VGS=0 V, ID=250 uA,
breakdown voltage 650
Tj=150 °C
Gate threshold
VGS(th) 2 4 V VDS=VGS, ID=250 uA
voltage
0.15 0.18 VGS=10 V, ID=10 A
Drain-source on-
RDS(ON) Ω VGS=10 V, ID=10 A,
state resistance 0.38
Tj=150 °C

Gate-source 100 VGS=30 V

IGSS nA
leakage current -100 VGS=-30 V
Drain-source
IDSS 1 μA VDS=600 V, VGS=0 V
leakage current

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition

Input capacitance Ciss 1440 pF

VGS=0 V,
Output capacitance Coss 105 pF VDS=50 V,
ƒ=1 MHz
Reverse transfer capacitance Crss 3.94 pF

Turn-on delay time td(on) 40.3 ns

VGS=10 V,
Rise time tr 49.3 ns VDS=480 V,
Turn-off delay time td(off) 60 ns RG=25 Ω,
ID=20 A
Fall time tf 59.2 ns

Gate Charge Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition

Total gate charge Qg 23.3 nC

Gate-source charge Qgs 6.6 nC VGS=10 V,

VDS=480 V,
Gate-drain charge Qgd 8.3 nC ID=20 A
Gate plateau voltage Vplateau 5.6 V

Body Diode Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition
IS=20 A,
Diode forward voltage VSD 1.4 V
VGS=0 V
Reverse recovery time trr 367.2 ns
VR=400 V,
Reverse recovery charge Qrr 4.2 μC IS=20 A,
di/dt=100 A/μs
Peak reverse recovery current Irrm 24.3 A

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with Ta=25 °C.
5) VDD=150 V, VGS=10 V, L=10.8 mH, starting Tj=25 °C.

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Electrical Characteristics Diagrams

30
VDS=20 V
28
8V
26 7V
24
10V

ID, Drain current(A)

ID, Drain-source current (A)

22 10
20 6V
18
16
125 ℃
14
12 25 ℃
10
8
VGS= 5V
6
4
2
1
0 0 2 4 6 8 10
0 5 10 VGS, Gate-source voltage(V)
VDS, Drain-source voltage (V)

Figure 1. Typ. output characteristics Figure 2. Typ. transfer characteristics

10
10000
VGS, Gate-source voltage(V)

8
1000 Ciss
C, Capacitance(pF)

100

Coss 4

10
2

Crss
1 0
0 20 40 60 80 100 0 4 8 12 16 20 24
VDS, Drain-source voltage (V) Qg, Gate charge(nC)

Figure 3. Typ. capacitances Figure 4. Typ. gate charge

800 0.40

0.35
BVDSS , Drain-source voltage (V)

750
RDS(on) , On-resistance()

0.30

700
0.25

650 0.20

0.15
600

0.10
550
0.05

500 0.00
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
Tj , Juntion temperature (℃ ) Tj , Juntion temperature (℃ )

Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-state resistance

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

0.24
10

RDS(ON), On-resistance()
Is, Source current(A)

0.22
125 ℃
VGS=7 V
0.20
1

25 ℃
0.18
VGS=10 V

0.16

0.1
0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 14 16 18 20
VSD, Source-drain voltage(V) ID, Drain current(A)

Figure 7. Forward characteristic of body diode Figure 8. Drain-source on-state resistance

22 100

20

18
ID, Drain-source current (A)

10
16 10us
RDS(ON) Limited
ID, Drain current(A)

14
100s
12 1ms
1
10 10ms

8 100ms
6
0.1
4 DC
2

0 0.01
0 25 50 75 100 125 150 1 10 100 1000
TC , Case temperature (℃) VDS, Drain-source voltage(V)

Figure 9. Drain current Figure 10. Safe operation area TC=25 °C

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Test circuits and waveforms

Figure 1. Gate charge test circuit & waveform

Figure 2. Switching time test circuit & waveforms

Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms

Figure 4. Diode reverse recovery test circuit & waveforms

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Package Information

mm
Symbol
Min Nom Max
E 9.96 10.16 10.36
A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A4 2.56 2.76 2.96
c 0.40 0.50 0.65
D 15.57 15.87 16.17
H1 6.70 REF
e 2.54 BSC
L 12.68 12.98 13.28
L1 2.88 3.03 3.18
ΦP 3.03 3.18 3.38
ΦP3 3.15 3.45 3.65
F3 3.15 3.30 3.45
G3 1.25 1.35 1.55
b1 1.18 1.28 1.43
b2 0.70 0.80 0.95

Version 1: TO220F-P outline dimension

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 OSG60R180FF
Enhancement Mode N-Channel Power MOSFET

Ordering Information
Package Units/ Tubes / Units/ Inner Boxes/ Units/
Type Tube Inner Box Inner Box Carton Box Carton Box
TO220F-P 50 20 1000 6 6000

Product Information

Product Package Pb Free RoHS Halogen Free

OSG60R180FF TO220F yes yes yes

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Oriental
Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third
party.
For further information on technology, delivery terms and conditions and prices, please
contact the Oriental Semiconductor sales representatives (www.orientalsemi.com).

© Oriental Semiconductor Co.,Ltd. All Rights Reserved

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