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    SMBTA43-Siemens Semiconductor Group

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    jassem
    These NPN silicon transistors are designed for high voltages. The SMBTA 42 has a collector-emitter breakdown voltage of 300V and the SMBTA 43 has 200V. They have low saturation voltages and come in complementary PNP types. The transistors have high breakdown voltages, low saturation voltages, and complementary PNP types.

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    SMBTA43-Siemens Semiconductor Group

    Uploaded by

    jassem
    58 views4 pages
    These NPN silicon transistors are designed for high voltages. The SMBTA 42 has a collector-emitter breakdown voltage of 300V and the SMBTA 43 has 200V. They have low saturation voltages and come in complementary PNP types. The transistors have high breakdown voltages, low saturation voltages, and complementary PNP types.

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    These NPN silicon transistors are designed for high voltages. The SMBTA 42 has a collector-emitter breakdown voltage of 300V and the SMBTA 43 has 200V. They have low saturation voltages and come in complementary PNP types. The transistors have high breakdown voltages, low saturation voltages, and complementary PNP types.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    58 views4 pages

    SMBTA43-Siemens Semiconductor Group

    Uploaded by

    jassem
    These NPN silicon transistors are designed for high voltages. The SMBTA 42 has a collector-emitter breakdown voltage of 300V and the SMBTA 43 has 200V. They have low saturation voltages and come in complementary PNP types. The transistors have high breakdown voltages, low saturation voltages, and complementary PNP types.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    NPN Silicon Transistors for High Voltages SMBTA 42

    SMBTA 43

    ● High breakdown voltage


    ● Low collector-emitter saturation voltage
    ● Complementary types: SMBTA 92, SMBTA 93 (PNP)

    Type Marking Ordering Code Pin Configuration Package1)


    (tape and reel) 1 2 3
    SMBTA 42 s1D Q68000-A6478 B E C SOT-23
    SMBTA 43 s1E Q68000-A6482

    Maximum Ratings
    Parameter Symbol Values Unit
    SMBTA 42 SMBTA 43
    Collector-emitter voltage VCE0 300 200 V
    Collector-base voltage VCB0 300 200
    Emitter-base voltage VEB0 6
    Collector current IC 500 mA
    Base current IB 100
    Total power dissipation, TS = 74 ˚C Ptot 360 mW
    Junction temperature Tj 150 ˚C
    Storage temperature range Tstg – 65 … + 150

    Thermal Resistance
    Junction - ambient2) Rth JA ≤ 280 K/W
    Junction - soldering point Rth JS ≤ 210

    1) For detailed information see chapter Package Outlines.


    2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

    Semiconductor Group 1 5.91


    SMBTA 42
    SMBTA 43

    Electrical Characteristics
    at TA = 25 ˚C, unless otherwise specified.
    Parameter Symbol Values Unit
    min. typ. max.

    DC characteristics
    Collector-emitter breakdown voltage V(BR)CE0 V
    IC = 1 mA SMBTA 42 300 – –
    SMBTA 43 200 – –
    Collector-base breakdown voltage V(BR)CB0
    IC = 100 µA SMBTA 42 300 – –
    SMBTA 43 200 – –
    Emitter-base breakdown voltage V(BR)EB0 6 – –
    IE = 100 µA
    Collector-base cutoff current ICB0
    VCB = 200 V SMBTA 42 – – 100 nA
    VCB = 160 V SMBTA 43 – – 100 nA
    VCB = 200 V, TA = 150 ˚C SMBTA 42 – – 20 µA
    VCB = 160 V, TA = 150 ˚C SMBTA 43 – – 20 µA

    Emitter-base cutoff current IEB0 – – 100 nA


    VEB = 3 V
    DC current gain hFE –
    IC = 1 mA, VCE = 10 V 25 – –
    IC = 10 mA, VCE = 10 V1) 40 – –
    IC = 30 mA, VCE = 10 V1) SMBTA 42 40 – –
    SMBTA 43 40 – –
    Collector-emitter saturation voltage1) VCEsat V
    IC = 20 mA, IB = 2 mA SMBTA 42 – – 0.5
    SMBTA 43 – – 0.4
    Base-emitter saturation voltage1) VBEsat – – 0.9
    IC = 20 mA, IB = 2 mA

    AC characteristics
    Transition frequency fT 50 – – MHz
    IC = 10 mA, VCE = 20 V, f = 100 MHz
    Output capacitance Cobo pF
    VCB = 20 V, f = 1 MHz SMBTA 42 – – 3
    SMBTA 43 – – 4

    1)
    Pulse test conditions: t ≤ 300 µs, D = 2 %.

    Semiconductor Group 2
    SMBTA 42
    SMBTA 43

    Total power dissipation Ptot = f (TA*; TS) Transition frequency fT = f (IC)


    * Package mounted on epoxy VCE = 10 V, f = 100 MHz

    Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0)


    TA = 25 ˚C, D = 0

    Semiconductor Group 3
    SMBTA 42
    SMBTA 43

    Collector cutoff current ICB0 = f (TA) Collector current IC = f (VBE)


    VCB = 160 V VCE = 10 V

    DC current gain hFE = f (IC)


    VCE = 10 V

    Semiconductor Group 4

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