Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA634

DESCRIPTION
·With TO-202 package
·Complement to type 2SC1096
·High current capability

APPLICATIONS
·Audio frequency power amplifier
·Low speed switching

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-202) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -40 V

VCEO Collector-emitter voltage Open base -30 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -3.0 A

ICM Collector current-peak -6.0 A

IB Base current -0.6 A

Ta=25 1.2
PT Total power dissipation W
TC=25 10

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA634

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -0.7 -2.0 V

VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -1.1 -2.0 V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V

hFE-1 DC current gain IC=-20mA ; VCE=-5V 20

hFE-2 DC current gain IC=-1A ; VCE=-5V 40 250

ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 µA

IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 µA

COB Output capacitance IE=0; VCB=-10V;f=1MHz 75 pF

fT Transition frequency IC=-0.1A ; VCE=-5V 55 MHz

hFE-2 Classifications

N M L K

40-60 50-100 80-160 120-250

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA634

PACKAGE OUTLINE

Fig.2 outline dimensions

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