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    Type 2N3866A: Geometry Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/398

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    JavierYancb
    This data sheet provides specifications for the 2N3866A NPN bipolar junction transistor. The transistor is housed in a TO-39 package and is intended for general purpose switching and amplifier applications. Key maximum ratings include a collector-emitter voltage of 30V, collector-base voltage of 60V, and continuous collector current of 0.4A. Electrical characteristics include gain ranges, voltage and current ratings, power output capabilities, and small signal parameters.

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    Type 2N3866A: Geometry Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/398

    Uploaded by

    JavierYancb
    76 views2 pages
    This data sheet provides specifications for the 2N3866A NPN bipolar junction transistor. The transistor is housed in a TO-39 package and is intended for general purpose switching and amplifier applications. Key maximum ratings include a collector-emitter voltage of 30V, collector-base voltage of 60V, and continuous collector current of 0.4A. Electrical characteristics include gain ranges, voltage and current ratings, power output capabilities, and small signal parameters.

    Original Description:

    2 N 3866 Datasheet

    Original Title

    2 N 3866

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    This data sheet provides specifications for the 2N3866A NPN bipolar junction transistor. The transistor is housed in a TO-39 package and is intended for general purpose switching and amplifier applications. Key maximum ratings include a collector-emitter voltage of 30V, collector-base voltage of 60V, and continuous collector current of 0.4A. Electrical characteristics include gain ranges, voltage and current ratings, power output capabilities, and small signal parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    76 views2 pages

    Type 2N3866A: Geometry Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/398

    Uploaded by

    JavierYancb
    This data sheet provides specifications for the 2N3866A NPN bipolar junction transistor. The transistor is housed in a TO-39 package and is intended for general purpose switching and amplifier applications. Key maximum ratings include a collector-emitter voltage of 30V, collector-base voltage of 60V, and continuous collector current of 0.4A. Electrical characteristics include gain ranges, voltage and current ratings, power output capabilities, and small signal parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Data Sheet No.

    2N3866A

    Type 2N3866A Generic Part Number:


    Geometry 1007 2N3866A
    Polarity NPN
    Qual Level: JAN - JANS REF: MIL-PRF-19500/398

    Features:

    • General-purpose silicon transistor


    for switching and amplifier appli-
    cations.
    • Housed in TO-39 case.
    • Also available in chip form using
    the 1007 chip geometry.
    • The Min and Max limits shown are
    per MIL-PRF-19500/398 which TO-39
    Semicoa meets in all cases.

    Maximum Ratings
    o
    TC = 25 C unless otherwise specified

    Rating Symbol Rating Unit

    Collector-Emitter Voltage VCEO 30 V

    Collector-Base Voltage VCBO 60 V

    Emitter-Base Voltage VEBO 3.5 V

    Collector Current, Continuous IC 0.4 A

    o
    Operating Junction Temperature TJ -55 to +175 C

    o
    Storage Temperature TSTG -55 to +175 C
    Data Sheet No. 2N3866A

    Electrical Characteristics
    TC = 25oC unless otherwise specified
    OFF Characteristics Symbol Min Max Unit
    Collector-Base Breakdown Voltage
    V(BR)CBO 60 --- V
    IC = 100 µA, pulsed
    Collector-Emitter Breakdown Voltage
    V(BR)CEO 30 --- V
    IC = 5 mA, pulsed
    Collector-Emitter Breakdown Voltage
    V(BR)CEC 55 --- ---
    IC = 40 mA, VBE = -5V, clamped
    Emitter-Base Breakdown Voltage
    V(BR)EBO 3.5 --- V
    IE = 100 µA, pulsed
    Collector-Emitter Cutoff Current
    ICES --- 100 µA
    VCE = 55 V
    Collector-Emitter Cutoff Current
    o ICES2 --- 2.0 mA
    VCE = 55 V, TA = +150 C
    Collector-Emitter Cutoff Current
    ICEO --- 20 µA
    VCE = 28 V

    ON Characteristics Symbol Min Max Unit


    Forward Current Transfer Ratio
    IC = 50 mA, VCE = 5.0 V (pulsed) hFE1 25 200 ---
    IC = 360 mA, VCE = 5.0 V (pulsed) hFE2 8.0 --- ---
    o
    IC = 50 mA, VCE = 5.0 V (pulsed), TA = -55 C hFE3 12 --- ---
    Collector-Emitter Saturation Voltage
    IC = 100 mA, IB = 10 mA (pulsed) VCE(sat) --- 1.0 V dc
    Power Output
    VCC = 28 V, PIN = 0.15 W, f = 400 MHz P1out 1.0 2.0 W
    Power Output
    VCC = 28 V, PIN = 0.075 W, f = 400 MHz P2out 0.5 --- W
    Collector Efficiency
    VCC = 28 V, PIN = 0.15 W, f = 400 MHz n1 45 --- %
    Collector Efficiency
    VCC = 28 V, PIN = 0.075 W, f = 400 MHz n2 40 --- %

    Small Signal Characteristics Symbol Min Max Unit


    Magnitude of Common Emitter, Small Signal, Short Circuit
    Current Transfer Ratio |hFE| 4.0 7.5 ---
    IC = 50 mA, VCE = 15 V, f = 200
    Open Circuit Output Capacitance
    COBO --- 3.5 pF
    VCB = 28 V, IE = 0

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