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    BC876

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    mirzashahid
    Datasheet

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    © All Rights Reserved
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    BC876

    Uploaded by

    mirzashahid
    2 views4 pages
    Datasheet

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    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2 views4 pages

    BC876

    Uploaded by

    mirzashahid
    Datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    PNP Silicon Darlington Transistors BC 876

    … BC 880

    ● High current gain


    ● High collector current
    ● Low collector-emitter saturation voltage
    ● Complementary types: BC 875, BC 877,
    BC 879 (NPN)

    Type Marking Ordering Code Pin Configuration Package1)


    1 2 3
    BC 876 – C62702-C943 E C B TO-92
    BC 878 C62702-C942
    BC 880 C62702-C941

    Maximum Ratings
    Parameter Symbol Values Unit
    BC 876 BC 878 BC 880
    Collector-emitter voltage VCE0 45 60 80 V
    Collector-base voltage VCB0 60 80 100
    Emitter-base voltage VEB0 5
    Collector current IC 1 A
    Peak collector current ICM 2
    Base current IB 100 mA
    Peak base current IBM 200
    Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W
    Junction temperature Tj 150 ˚C
    Storage temperature range Tstg – 65 … + 150

    Thermal Resistance
    Junction - ambient2) Rth JA ≤ 156 K/W
    Junction - case3) Rth JC ≤ 75
    1) For detailed information see chapter Package Outlines.
    2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
    the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
    3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

    Semiconductor Group 1 5.91


    BC 876
    … BC 880

    Electrical Characteristics
    at TA = 25 ˚C, unless otherwise specified.
    Parameter Symbol Values Unit
    min. typ. max.

    DC characteristics
    Collector-emitter breakdown voltage V(BR)CE0 V
    IC = 50 mA
    BC 876 45 – –
    BC 878 60 – –
    BC 880 80 – –
    Collector-base breakdown voltage V(BR)CB0
    IC = 100 µA
    BC 876 60 – –
    BC 878 80 – –
    BC 880 100 – –
    Emitter-base breakdown voltage, IE = 100 µA V(BR)EB0 5 – –
    Collector cutoff current ICE0 – – 500
    VCE = 0.5 × VCEmax
    Collector cutoff current ICB0
    VCB = VCBmax – – 100 nA
    VCB = VCBmax, TA = 150 ˚C – – 20 µA

    Emitter cutoff current, VEB = 4 V IEB0 – – 100 nA


    DC current gain hFE –
    IC = 150 mA; VCE = 10 V1) 1000 – –
    IC = 500 mA; VCE = 10 V1) 2000 – –
    Collector-emitter saturation voltage1) VCEsat V
    IC = 500 mA, IB = 0.5 mA – – 1.3
    IC = 1000 mA, IB = 1 mA – – 1.8
    Base-emitter saturation voltage1) VBEsat – – 2.2
    IC = 1000 mA; IB = 1 mA

    AC characteristics
    Transition frequency fT – 150 – MHz
    IC = 200 mA, VCE = 5 V, f = 20 MHz

    1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

    Semiconductor Group 2
    BC 876
    … BC 880

    Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA)
    VCB = 100 V

    Permissible pulse load RthJA = f (tp) DC current gain hFE = f (TA)


    VCE = 10 V

    Semiconductor Group 3
    BC 876
    … BC 880

    DC current gain hFE = f (IC) Transition frequency fT = f (IC)


    VCE = 10 V, TA = 25 ˚C VCE = 5 V, f = 20 MHz

    Collector-emitter saturation voltage Base-emitter saturation voltage


    VCEsat = f (IC) VBEsat = f (IC)
    Parameter = IB, TA = 25 ˚C Parameter = IB, TA = 25 ˚C

    Semiconductor Group 4

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