SSC3S910 Data Sheet: LLC Current-Resonant Off-Line Switching Controller

LLC Current-Resonant Off-Line Switching Controller
SSC3S910 Data Sheet
Description Package
The SSC3S910 is a controller with SMZ* method for
SOP18
LLC current resonant switching power supplies,
incorporating a floating drive circuit for a high-side
power MOSFET. The product includes useful functions
such as the Standby Function, the Overload Protection
with input voltage compensation, the Automatic Dead
Time Adjustment, and the Capacitive Mode Detection.
The product achieves high efficiency, low noise and
high cost-performance power supply systems with few
external components.
*SMZ: Soft-switched Multi-resonant Zero Current
switch, achieved soft switching operation during all Not to scale
switching periods.
Features
● Standby Mode Change Function
▫ Output Power at Light Load: PO = 125 mW
(PIN = 0.27 W, as a reference with discharge resistor
Application
of 1MΩ for across the line capacitor) Switching power supplies for electronic devices such as:
▫ Burst operation in standby mode
▫ Soft-on/Soft-off function: reduces audible noise ● Digital appliances: LCD television and so forth
● Realizing power supply with universal mains input ● Office automation (OA) equipment: server, multi-
voltage function printer, and so forth
● Soft-start Function ● Industrial apparatus
● Capacitive Mode Detection Function ● Communication facilities
● Reset Detection Function
● Automatic Dead Time Adjustment Function
● Built-in Startup Circuit
● Input Electrolytic Capacitor Discharge Function
● Protections
▫ Brown-In and Brown-Out Function: Auto-restart
▫ High-side Driver UVLO: Auto-restart
▫ Overcurrent Protection (OCP): Auto-restart, peak
drain current detection, 2-step detection
▫ Overload Protection (OLP) with Input Voltage
Compensation: Auto-restart
▫ Overvoltage Protection (OVP): Auto-restart
▫ Thermal Shutdown (TSD): Auto-restart
Typical Application
VOUT1(+)
U1
VSEN ST
1 18
VCC 2 17 NC
FB 3 16 VGH
SSC3S910
NF VS
4 15
VOUT(-)
CSS 5 14 VB
CL NC
6 13
RC REG VOUT2(+)
7 12
VAC
PL 8 11 VGL
SB 9 10 GND
PC2
Standby
PC2
TC_SSC3S910_1_R3
SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 1

Aug. 06, 2020 https://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2014
SSC3S910
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 3
2. Electrical Characteristics -------------------------------------------------------------------------------- 4
3. Block Diagram --------------------------------------------------------------------------------------------- 7
4. Pin Configuration Definitions --------------------------------------------------------------------------- 7
5. Typical Application --------------------------------------------------------------------------------------- 8
6. Physical Dimensions -------------------------------------------------------------------------------------- 9
7. Marking Diagram ----------------------------------------------------------------------------------------- 9
8. Operational Description ------------------------------------------------------------------------------- 10
8.1 Resonant Circuit Operation --------------------------------------------------------------------- 10
8.2 Startup Operation --------------------------------------------------------------------------------- 13
8.3 Undervoltage Lockout (UVLO) ---------------------------------------------------------------- 13
8.4 Bias Assist Function------------------------------------------------------------------------------- 13
8.5 Soft Start Function -------------------------------------------------------------------------------- 14
8.6 Minimum and Maximum Switching Frequency Setting ----------------------------------- 14
8.7 High-side Driver ----------------------------------------------------------------------------------- 14
8.8 Constant Voltage Control Operation ---------------------------------------------------------- 15
8.9 Standby Function ---------------------------------------------------------------------------------- 15
8.9.1 Standby Mode Changed by External Signal ------------------------------------------- 16
8.9.2 Burst Oscillation Operation --------------------------------------------------------------- 16
8.10 Automatic Dead Time Adjustment Function ------------------------------------------------ 17
8.11 Brown-In and Brown-Out Function ----------------------------------------------------------- 17
8.12 Capacitive Mode Detection Function ---------------------------------------------------------- 18
8.13 Input Electrolytic Capacitor Discharge Function ------------------------------------------- 19
8.14 Reset Detection Function ------------------------------------------------------------------------ 19
8.15 Overvoltage Protection (OVP) ------------------------------------------------------------------ 21
8.16 Overcurrent Protection (OCP) ----------------------------------------------------------------- 21
8.17 Overload Protection (OLP) with Input Voltage Compensation -------------------------- 22
8.17.1 Overload Protection (OLP) ---------------------------------------------------------------- 22
8.17.2 OLP Input Voltage Compensation Function ------------------------------------------- 23
8.18 Thermal Shutdown (TSD) ----------------------------------------------------------------------- 24
9. Design Notes ---------------------------------------------------------------------------------------------- 25
9.1 External Components ---------------------------------------------------------------------------- 25
9.1.1 Input and Output Electrolytic Capacitors ---------------------------------------------- 25
9.1.2 Resonant Transformer --------------------------------------------------------------------- 25
9.1.3 Current Detection Resistor, ROCP -------------------------------------------------------- 25
9.1.4 Current Resonant Capacitor, Ci --------------------------------------------------------- 25
9.1.5 Gate Pin Peripheral Circuit --------------------------------------------------------------- 25
9.2 PCB Trace Layout and Component Placement --------------------------------------------- 25
10. Pattern Layout Example ------------------------------------------------------------------------------- 27
11. Reference Design of Power Supply ------------------------------------------------------------------ 28
Important Notes ---------------------------------------------------------------------------------------------- 31

SSC3S910
1. Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless otherwise specified, TA is 25°C.
Characteristic Symbol Pins Rating Unit
VSEN Pin Voltage VSEN 1 − 10 −0.3 to 10 V
Control Part Input Voltage VCC 2 − 10 −0.3 to 35 V
FB Pin Voltage VFB 3 − 10 −0.3 to 6 V
NF Pin Voltage VNF 4 − 10 −0.3 to 10 V
CSS Pin Voltage VCSS 5 − 10 −0.3 to 6 V
CL Pin Voltage VCL 6 − 10 −0.3 to 6 V
RC Pin Voltage VRC 7 − 10 −6 to 6 V
PL Pin Voltage VPL 8 − 10 −0.3 to 6 V
SB Pin Sink Current ISB 9 − 10 100 μA
VGL pin Voltage VGL 11 − 10 −0.3 to VREG + 0.3 V
REG pin Source Current IREG 12 − 10 −10.0 mA
Voltage Between VB Pin and VS Pin VB−VS 14 − 15 −0.3 to 20.0 V
VS Pin Voltage VS 15 − 10 −1 to 600 V
VGH Pin Voltage VGH 16 − 10 VS − 0.3 to VB + 0.3 V
ST Pin Voltage VST 18 − 10 −0.3 to 600 V
Operating Ambient Temperature TOP — −40 to 85 °C
Storage Temperature Tstg — −40 to 125 °C
Junction Temperature Tj — 150 °C
* Surge voltage withstand (Human body model) of No.14, 15, 16, and 18 is guaranteed 1000V. Other pins are
guaranteed 2000V.

SSC3S910
2. Electrical Characteristics
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless otherwise specified, TA is 25°C, and VCC is 19 V.
Characteristic Symbol Conditions Pins Min. Typ. Max. Unit
Start Circuit and Circuit Current
Operation Start Voltage VCC(ON) 2 − 10 12.9 14.0 15.1 V
Operation Stop Voltage1 VCC(OFF) 2 − 10 7.8 8.8 9.8 V
Startup Current Biasing Threshold
VCC(BIAS) 2 − 10 8.8 9.8 10.8 V
Voltage*
Circuit Current in Operation ICC(ON) 2 − 10 — — 10.0 mA
Circuit Current in Non-Operation ICC(OFF) VCC = 8 V 2 − 10 — 0.7 1.5 mA
Startup Current ICC(ST) 18 − 10 3.0 6.0 9.0 mA
VCC Pin Protection Circuit Release
VCC(P.OFF) 2 − 10 7.8 8.8 9.8 V
Threshold Voltage*
Circuit Current in Protection ICC(P) VCC = 10 V 2 − 10 — 0.7 1.5 mA
Oscillator
11 – 10
Minimum Frequency f(MIN) 28.5 32.0 36.5 kHz
16 − 15
11 – 10
Maximum Frequency f(MAX) 230 300 380 kHz
16 − 15
11 – 10
Minimum Dead-Time td(MIN) 0.20 0.35 0.50 µs
16 − 15
11 – 10
Maximum Dead-Time td(MAX) 1.20 1.65 2.20 µs
16 − 15
Externally Adjusted Minimum 11 – 10
f(MIN)ADJ RCSS = 30 kΩ 70 74 78 kHz
Frequency 16 − 15
Feedback Control
FB Pin Oscillation Start Threshold
VFB(ON) 3 – 10 0.15 0.30 0.45 V
Voltage
FB Pin Oscillation Stop Threshold
VFB(OFF) 3 – 10 0.05 0.20 0.35 V
Voltage
FB Pin Maximum Source Current IFB(MAX) VFB = 0 V 3 – 10 −300 −195 −100 µA
Soft-start
CSS Pin Charging Current ICSS(C) 5 – 10 −120 −105 −90 µA
CSS Pin Reset Current ICSS(R) VCC = 8 V 5 – 10 1.2 1.8 2.4 mA
11 – 10
Maximum Frequency in Soft-start f(MAX)SS 300 400 500 kHz
16 − 15
Standby
SB Pin Standby Threshold Voltage VSB(STB) 9 – 10 4.5 5.0 5.5 V
SB Pin Oscillation Start Threshold
VSB(ON) 9 – 10 0.5 0.6 0.7 V
Voltage
SB Pin Oscillation Stop Threshold
VSB(OFF) 9 – 10 0.4 0.5 0.6 V
Voltage
SB Pin Clamp Voltage VSB(CLAMP) 9 – 10 7.1 8.4 9.8 V
SB Pin Source Current ISB(SRC) 9 – 10 −20 −10 −4 µA
1
VCC(OFF) = VCC(P.OFF) < VCC(BIAS) always.

SSC3S910

SB Pin Sink Current ISB(SNK) 9 – 10 4 10 20 µA
Overload Protection (OLP) with Input Voltage Compensation
CL pin OLP Threshold Voltage (1) VCL(OLP)1 VSEN = 1.5 V 6 – 10 3.80 4.08 4.30 V
CL pin OLP Threshold Voltage (4) VCL(OLP)4 VSEN = 5.0V 6 – 10 1.05 1.29 1.55 V
CL Pin Source Current ICL(SRC) 6 – 10 −29 −17 −5 μA
Brown-In and Brown-Out
VSEN Pin Threshold Voltage (On) VSEN(ON) 1 – 10 1.248 1.300 1.352 V
VSEN Pin Threshold Voltage (Off) VSEN(OFF) 1 – 10 1.056 1.100 1.144 V
Reset Detection
11 – 10
Maximum Reset Time tRST(MAX) 13 15 19 µs
16 − 15
Driver Circuit Power Supply
VREG Pin Output Voltage VREG 12 – 10 9.2 10.0 10.8 V
High-side Driver
High-side Driver Operation Start
VBUV(ON) 14 – 15 5.9 6.8 8.3 V
Voltage
High-side Driver Operation Stop
VBUV(OFF) 14 – 15 5.5 6.4 7.2 V
Voltage
Driver Circuit
VREG = 10.5V
IGL(SRC)1 VB = 10.5V 11 – 10
VGL,VGH Pin Source Current 1 — –540 — mA
IGH(SRC)1 VGL = 0V 16 − 15
VGH = 0V
VREG = 10.5V
IGL(SNK)1 VB = 10.5V 11 – 10
VGL,VGH Pin Sink Current 1 — 1.50 — A
IGH(SNK)1 VGL = 10.5V 16 − 15
VGH = 10.5V
VREG = 12V
IGL(SRC)2 VB = 12V 11 – 10
VGL,VGH Pin Source Current 2 −140 −90 −40 mA
IGH(SRC)2 VGL = 10.5V 16 − 15
VGH = 10.5V
VREG = 12V
IGL(SNK)2 VB = 12V 11 – 10
VGL,VGH Pin Sink Current 2 140 250 360 mA
IGH(SNK)2 VGL = 1.5V 16 − 15
VGH = 1.5V
Current Resonant and Overcurrent Protection(OCP)
0.02 0.10 0.18 V
Capacitive Mode Detection Voltage 1 VRC1 7 – 10
−0.18 −0.10 −0.02 V
0.35 0.50 0.65 V
Capacitive Mode Detection Voltage 2 VRC2 7 – 10
−0.65 −0.50 −0.35 V
1.42 1.50 1.58 V
RC Pin Threshold Voltage (Low) VRC(L) 7 – 10
−1.58 −1.50 −1.42 V
RC Pin Threshold Voltage 2.15 2.30 2.45 V

VRC(S) 7 – 10
(High speed) −2.45 −2.30 −2.15 V

SSC3S910

CSS Pin Sink Current (Low) ICSS(L) 5 – 10 1.2 1.8 2.4 mA
CSS Pin Sink Current (High speed) ICSS(S) 5 – 10 13.0 20.5 28.0 mA
Overvoltage Protection (OVP)
VCC Pin OVP Threshold Voltage VCC(OVP) 2 – 10 29.5 32.0 34.5 V
Thermal Shutdown (TSD)
Thermal Shutdown Temperature Tj(TSD) — 140 — — °C
Thermal Resistance
Junction to Ambient Thermal
θj-A — — — 95 °C/W
Resistance

SSC3S910
3. Block Diagram
18 High Side Driver 14

ST STARTUP VB
UVLO
2 START/STOP/ 16
VCC REG/BIAS/ LEVEL VGH
OVP SHIFT VS
15
10
GND VCC
GND
12
1 INPUT REG
VSEN SENSE
11
MAIN VGL
9 STANDBY
SB CONTROL 7
RC DETECTOR RC
DEAD
3 TIME RV DETECTOR
FB FREQ.
FB CONTROL CONTROL
FREQ.
MAX OC DETECTOR 6
5 SOFT-START/ CL
CSS OC/FMINADJ 8
PL DETECTOR PL
/OLP 4
NF
4. Pin Configuration Definitions

Number Name Function
1 VSEN The mains input voltage detection signal input
1 VSEN ST 18 Supply voltage input for the IC, and Over-
2 VCC
voltage Protection (OVP) signal input
2 VCC (NC) 17 Feedback signal input for constant voltage
3 FB
control
3 FB VGH 16
No function. (A capacitor must be connected
4 NF
4 NF VS 15 between the NF pin and the GND pin)
5 CSS Soft-start capacitor connection
5 CSS VB 14 OLP Input Voltage Compensation capacitor
6 CL
connection
6 CL (NC) 13 Resonant current detection signal input, and
7 RC
Overcurrent Protection (OCP) signal input
7 RC REG 12
Resonant current detection signal input for OLP
8 PL
8 PL VGL 11 Input Voltage Compensation
9 SB Standby mode change signal input
9 SB GND 10 10 GND Ground
11 VGL Low-side gate drive output
12 REG Supply voltage output for gate drive circuit
13 (NC) —
14 VB Supply voltage input for high-side driver
15 VS Floating ground for high-side driver
16 VGH High-side gate drive output
17 (NC) —
18 ST Startup current input

SSC3S910
5. Typical Application
BR1
R2
C1 T1
D53
R3 C55
R4 VOUT1(+)
U1 R51
VSEN 1 18 ST PC1 R55 R52
C4 D51 R56
VCC NC R15 D5 C52 C53
2 17 Q(H) R54
C5 FB VGH
Main Input
3 16 R57 C54
SSC3S910
CNF C12 R10
NF 4 15 VS R53
R5 VOUT(-)
R11
CSS 5 14 VB D4
VAC C6 C51
CL 6 13 NC R12 CV
C7 D3 D52
RC REG R16 VOUT2(+)
7 12 D6 Q(L)
C8
Ci
PL 8 11 VGL R58
ROCP R6 R7 R13 C3 D54
SB 9 10 GND
PC2
R14
Q51 Standby
C13 R1 D1
Q1 R16 C2
R8 Q2 R59
PC1 R18
C9 R17 C11
R15
C10 PC2 R19
TC_SSC3S910_3_R4
Figure 5-1. Typical application circuit

SSC3S910
6. Physical Dimensions
● SOP18
NOTES:
● Dimension is in millimeters
● Pb-free
7. Marking Diagram
18
S SC3S910
Part Number
S KY MD
Lot Number:
X XX X Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
1 D is the period of days represented by:
1: the first 10 days of the month (1st to 10th)
2: the second 10 days of the month (11th to 20th)
3: the last 10–11 days of the month (21st to 31st)
Control Number

SSC3S910
8. Operational Description The frequency in which Ż becomes minimum value is

called a resonant frequency, f0. The higher frequency
All of the parameter values used in these descriptions area than f0 is an inductance area. The lower frequency
are typical values, unless they are specified as minimum area than f0 is a capacitance area.
or maximum. Current polarities are defined as follows: From Equation (3), f0 is as follows:
current going into the IC (sinking) is positive current
(+); and current coming out of the IC (sourcing) is 1
negative current (−). Q(H) and Q(L) indicate a high-side f0 = . (4)
power MOSFET and a low-side power MOSFET 2π√LC
respectively. Ci and CV indicate a current resonant
capacitor and a voltage resonant capacitor, respectively. Figure 8-3 shows the circuit of a current resonant
power supply. The basic configuration of the current
resonant power supply is a half-bridge converter. The
switching devices, Q(H) and Q(L), are connected in series
8.1 Resonant Circuit Operation with VIN. The series resonant circuit and the voltage
Figure 8-1 shows a basic RLC series resonant circuit. resonant capacitor, CV, are connected in parallel with
The impedance of the circuit, Ż, is as the following Q(L). The series resonant circuit is consisted of the
Equation. following components: the resonant inductor, LR; the
primary winding, P, of a transformer, T1; and the current
1 resonant capacitor, Ci. The coupling between the
Ż = R + j (ωL − ), (1) primary and secondary windings of T1 is designed to be
ωC
poor so that the leakage inductance increases. This
where ω is angular frequency; and ω = 2πf. leakage inductance is used for LR. This results in a down
Thus, sized of the series resonant circuit. The dotted mark with
T1 describes the winding polarity, the secondary
1 windings, S1 and S2, are connected so that the polarities
Ż = R + j (2πfL − ). (2) are set to the same position as shown in Figure 8-3. In
2πfC
addition, the winding numbers of each other should be
When the frequency, f, changes, the impedance of equal. From Equation (1), the impedance of a current
resonant circuit will change as shown in Figure 8-2. resonant power supply is calculated by Equation (5).
From Equation (4), the resonant frequency, f0 , is
calculated by Equation (6).
R L C 1
Ż = R + j {ω(LR + LP ) − }, (5)
ωCi
Figure 8-1. RLC Series Resonant Circuit 1

f0 = , (6)
2π√(LR + LP ) × Ci
Capacitance area Inductance area
where:
R is the equivalent resistance of load,
Impedance
LR is the inductance of the resonant inductor,

LP is the inductance of the primary winding P, and
Ci is the capacitance of current resonant capacitor.
R
ID(H)
f0 Frequency Q(H) Series resonant circuit
VDS(H) IS1
VGH LR
T1 VOUT
Figure 8-2. Impedance of Resonant Circuit VIN (+)
ID(L)
Cv P S1
When 2πfL = 1/2πfC, Ż of Equation (2) becomes the Q(L)
LP
minimum value, R (see Figure 8-2). In the case, ω is VDS(L)
calculated by Equation (3). VGL VCi S2
(−)
1 ICi
Ci
IS2
ω = 2πf = (3)
√LC
Figure 8-3. Current Resonant Power Supply Circuit

SSC3S910
In the current resonant power supply, Q(H) and Q(L) are resonant current flows to the primary side only to
alternatively turned on and off. The on and off times of charge Ci (see Figure 8-6).
them are equal. There is a dead time between the on
periods of Q(H) and Q(L). During the dead time, Q(H) and VGH
Q(L) are in off status. 0
In the current resonant power supply, the frequency is VGL
controlled. When the output voltage decreases, the IC 0
decreases the switching frequency so that the output VDS(H) VIN+VF(H)
power is increased to keep a constant output voltage.
This must be controlled in the inductance area (fSW < 0
f0 ). Since the winding current is delayed from the ID(H)
winding voltage in the inductance area, the turn-on 0
operates in a ZCS (Zero Current Switching); and the
VDS(L)
turn-off operates in a ZVS (Zero Voltage Switching).
Thus, the switching losses of Q(H) and Q(L) are nearly 0
zero. In the capacitance area (fSW < f0 ), the current ID(L)
resonant power supply operates as follows: When the 0
output voltage decreases, the switching frequency is
ICi
decreased; and then, the output power is more decreased.
Therefore, the output voltage cannot be kept constant. 0
Since the winding current goes ahead of the winding
voltage in the capacitance area, Q(H) and Q(L) operate in VCi
VIN/2
the hard switching. This results in the increases of a
power loss. This operation in the capacitance area is
called the capacitive mode operation. The current IS1
resonant power supply must be operated without the 0
capacitive mode operation (for more details, see Section IS2
8.12).
0
Figure 8-4 describes the basic operation waveform of A B D E t
current resonant power supply (see Figure 8-3 about the C F
symbol in Figure 8-4). For the description of current Figure 8-4. The Basic Operation Waveforms of
resonant waveforms in normal operation, the operation Current Resonant Power Supply
is separated into a period A to F. In the following
description:
ID(H) is the current of Q(H), Q(H)
ID(L) is the current of Q(L), ON
ID(H)
LR
VF(H) is the forwerd voltage of Q(H), VIN
LP
VF(L) is the forwerd voltage of Q(L), S1 IS1

IL is the current of LR, Q(L) Cv
VIN is an input voltage, VCV
VCi is Ci voltage, and OFF

S2
VCV is CV voltage. Ci
VCi
The current resonant power supply operations in

period A to F are as follows: Figure 8-5. Operation in period A
1) Period A
When Q(H) is on, an energy is stored into the series Q(H)
resonant circuit by ID(H) that flows through the ID(H)
LR
ON
resonant circuit and the transformer (see Figure 8-5). VIN
LP
At the same time, the energy is transferred to the

S1
secondary circuit. When the primary winding voltage
Q(L) Cv
can not keep the on status of the secondary rectifier,
the energy transmittion to the secondary circuit is OFF
S2
stopped.
Ci
2) Period B
After the secondary side current becomes zero, the Figure 8-6. Operation in Period B

SSC3S910
3) Period C
Q(H)
C is the dead-time period. Q(H) and Q(L) are in off
status. When Q(H) turns off, CV is discharged by IL that OFF LR
LP
is supplied by the energy stored in the series resonant VIN
circuit applies (see Figure 8-7). When VCV decreases IL
to VF(L), −ID(L) flows through the body diode of Q(L); Q(L) Cv
and VCV is clamped to VF(L). After that, Q(L) turns on. VCV
Since VDS(L) is nearly zero at the point, Q(L) operates OFF
-ID(L)
in the ZVS and the ZCS; thus, the switching loss
achieves nearly zero. Ci
4) Period D Figure 8-7. Operation in Period C

Immidiately after Q(L) turns on, −ID(L), which was
flowing in Period C, continues to flow through Q(L)
for a while. Then, ID(L) flows as shown in Figure 8-8; Q(H)
and VCi is applied the primary winding voltage of the LR
OFF
transformer. At the same time, energy is transferred to VIN
LP
the secondary circuit. When the primary winding
ID(L)
voltage can not keep the on status of the secondary S1
Q(L)
rectifier, the energy transmittion to the secondary Cv
circuit is stopped. ON –ID(L)

S2 IS2
Ci
5) Period E VCi
After the secondary side current becomes zero, the
resonant current flows to the primary side only to Figure 8-8. Operation in Period D
charge Ci (see Figure 8-9).
Q(H)
6) Period F
F is the dead-time period. Q(H) and Q(L) are in off OFF LR
LP
status. VIN
When Q(L) turns off, CV is charged by −IL that is ID(L) S1
supplied by the energy stored in the series resonant Q(L) Cv
circuit applies (see Figure 8-10). When VCV decreases
to VIN + VF(H), −ID(H) flows through body diode of ON
S2
Q(H); and VCV is clamped to VIN + VF(H). After that,
Q(H) turns on. Since VDS(H) is nearly zero at the point, Ci
Q(H) operates in the ZVS and the ZCS; thus, the
switching loss achieves nearly zero. Figure 8-9. Operation in Period E
7) After the period F

Immidiately after Q(H) turns on, −ID(H), which was Q(H)
flowing in Period F, continues to flow through Q(H) -ID(H)
LR
OFF
for a while. Then, ID(H) flows again; and the operation VIN
LP
returns to the period A. The above operation is
-IL
repeated to transfer energy to the secondary side from
Q(L)
the resonant circuit. VCV
Cv
OFF
Ci
Figure 8-10. Operation in Period F

SSC3S910
8.2 Startup Operation 8.3 Undervoltage Lockout (UVLO)

Figure 8-11 shows the VCC pin peripheral circuit. Figure 8-12 shows the relationship of VCC and ICC.
When the following all conditions are fulfilled, the IC After the IC starts operation, when the VCC pin
starts the startup operation: voltage decreases to VCC(OFF) = 8.8 V, the IC stops
switching operation by the Undervoltage Lockout
● The mains input voltage is provided, and the VSEN
(UVLO) Function and reverts to the state before startup
pin voltage increases to the on-threshold voltage,
again.
VSEN(ON) = 1.300 V, or more.
● The startup current, ICC(ST), which is a constant current
of 6.0 mA, is provided from the IC to capacitor C2 ICC
connected to the VCC pin, C2 is charged, and the
VCC pin voltage increases to the operation start
voltage, VCC(ON) = 14.0 V, or more.
● The FB pin voltage increases to the oscillation start
threshold voltage, VFB(ON) = 0.30 V, or more. Stop Start
After that, the startup circuit stops automatically, in

order to eliminate its own power consumption.
During the IC operation, the rectified voltage from the
auxiliary winding voltage, VD, of Figure 8-11 is a power VCC（OFF） VCC（ON） VCC pin
voltage
source to the VCC pin.
The winding turns of the winding D should be
adjusted so that the VCC pin voltage is applied to Figure 8-12. VCC versus ICC
equation (7) within the specification of the mains input
voltage range and output load range of the power supply.
The target voltage of the winding D is about 19 V. 8.4 Bias Assist Function
Figure 8-13 shows the VCC pin voltage behavior
VCC(BIAS) < VCC < VCC(OVP)
during the startup period.
VCC pin voltage Startup success

⇒9.8 (V) < VCC < 32.0 (V) (7) IC startup Target
operating
The startup time, tSTART, is determined by the value of VCC(ON) voltage
C2 and C6 connected to the CSS pin. Since the startup VCC(BIAS) Increasing by output
time for C6 is much smaller than that for C2, the startup voltage rising
time is approximately given as below:
Bias Assist period
VCC(OFF)
VCC(ON) − VCC(INT)
t START ≈ C2 × (8)
|ICC(ST) | Startup failure
where: Time
tSTART is the startup time in s,
VCC(INT) is the initial voltage of the VCC pin in V, and Figure 8-13. VCC pin voltage during startup period
ICC(ST) is the startup current, 6.0 mA
When the conditions of Section 8.2 are fulfilled, the

R2 18 IC starts operation. Thus, the circuit current, ICC,
ST increases, and the VCC pin voltage begins dropping. At
C1 R1 D1
R3 U1 2 the same time, the auxiliary winding voltage, VD,
VCC
VSEN increases in proportion to the output voltage rise. Thus,
1 CSS GND the VCC pin voltage is set by the balance between
5 10 VD dropping due to the increase of ICC and rising due to the
C4 R4 R5 C6 C2
increase of the auxiliary winding voltage, VD.
When the VCC pin voltage decreases to
VCC(OFF) = 8.8 V, the IC stops switching operation and a
startup failure occurs.
Figure 8-11. VCC pin peripheral circuit In order to prevent this, when the VCC pin voltage
decreases to the startup current threshold biasing voltage,

SSC3S910
VCC(BIAS) = 9.8 V, the Bias Assist Function is activated. operated with an oscillation frequency controlled by
While the Bias Assist Function is activated, any feedback.
decrease of the VCC pin voltage is counteracted by When the IC becomes any of the following conditions,
providing the startup current, ICC(ST), from the startup C6 is discharged by the CSS Pin Reset Current,
circuit. ICSS(R) = 1.8 mA.
It is necessary to check the startup process based on
● The VCC pin voltage decreases to the operation stop
actual operation in the application, and adjust the VCC
voltage, VCC(OFF) = 8.8 V, or less.
pin voltage, so that the startup failure does not occur.
● The VSEN pin voltage decreases to the off-threshold
If VCC pin voltage decreases to VCC(BIAS) and the Bias
voltage, VSEN(OFF) = 1.100 V, or less.
Assist Function is activated, the power loss increases.
● Any of protection operations in protection mode
Thus, VCC pin voltage in normal operation should be
(OVP, OLP or TSD) is activated.
set more than VCC(BIAS) by the following adjustments.
● The turns ratio of the auxiliary winding to the
secondary-side winding is increased. 8.6 Minimum and Maximum Switching
● The value of C2 in Figure 8-11 is increased and/or the
Frequency Setting
value of R1 is reduced.
The minimum switching frequency is adjustable by
During all protection operation, the Bias Assist
the value of R5 (RCSS) connected to the CSS pin. The
Function is disabled.
relationship of R5 (RCSS) and the externally adjusted
minimum frequency, f(MIN)ADJ, is shown in Figure 8-15.
The f(MIN)ADJ should be adjusted to more than the
8.5 Soft Start Function resonant frequency, fO, under the condition of the
Figure 8-14 shows the Soft-start operation minimum mains input voltage and the maximum output
waveforms. power.
The maximum switching frequency, fMAX, is
determined by the inductance and the capacitance of the
Frequency control resonant circuit. The fMAX should be adjusted to less than
CSS pin by feedback signal
voltage OCP operation the maximum frequency, f(MAX) = 300 kHz.
peropd
Soft-start
period
SSC3S910_R2
80
C6 is charged by ICSS(C)
0
Time 70
f(MIN)ADJ (kHz)
Primary-side
winding current
OCP limit
60
0
Time 50
40
20 30 40 50 60 70 80
Figure 8-14. Soft-start operation
RCSS (kΩ)
The IC has Soft Start Function to reduce stress of Figure 8-15. R5 (RCSS) versus f(MIN)ADJ
peripheral component and prevent the capacitive mode
operation.
During the soft start operation, C6 connected to the 8.7 High-side Driver
CSS pin is charged by the CSS Pin Charge Current,
ICSS(C) = −105 μA. The oscillation frequency is varied by Figure 8-16 shows a bootstrap circuit. The bootstrap
the CSS pin voltage. The switching frequency gradually circuit is for driving to Q(H) and is made by D3, R12 and
decreases from f(MAX)SS* = 400 kHz at most, according C12 between the REG pin and the VS pin. When Q(H) is
to the CSS pin voltage rise. At same time, output power OFF state and Q(L) is ON state, the VS pin voltage
increases. When the output voltage increases, the IC is becomes about ground level and C12 is charged from
the REG pin. When the voltage of between the VB pin
and the VS pin, VB-S, increases to VBUV(ON) = 6.8 V or
* The maximum frequency during normal operation is more, an internal high-side drive circuit starts operation.
f(MAX) = 300 kHz.

SSC3S910
When VB-S decreases to VBUV(OFF) = 6.4 V or less, its oscillation frequency is controlled by the FB pin, the
drive circuit stops operation. In case the both ends of output voltage is controlled to constant voltage (in
C12 and D4 are short, the IC is protected by VBUV(OFF). inductance area).
D4 for protection against negative voltage of the VS pin The feedback current increases under slight load
condition, and thus the FB pin voltage decreases. While
● D3 the FB pin voltage decreases to the oscillation stop
D3 should be an ultrafast recovery diode of short threshold voltage, VFB(OFF) = 0.20 V, or less, the IC stops
recovery time and low reverse current. When the switching operation. This operation reduces switching
maximum mains input voltage of the apprication is loss, and prevents the increasing of the secondary output
265VAC, it is recommended to use ultrafast recovery voltage. In Figure 8-17, R8 and C9 are for phase
diode of VRM = 600 V compensation adjustment, and C5 is for high frequency
noise rejection.
● C11, C12, and R12 The secondary-side circuit should be designed so that
The values of C11, C12, and R12 are determined by the collector current of PC1 is more than 195 μA which
total gate charge, Qg, of external MOSFET and is the absolute value of the maximum source current,
voltage dip amount between the VB pin and the VS IFB(MAX). Especially the current transfer ratio, CTR, of
pin in the burst oscillation mode of the standby mode the photo coupler should be taken aging degradation into
change. consideration.
C11, C12, and R12 should be adjusted so that the
voltage between the VB pin and the VS is more than U1
VBUV(ON) = 6.8 V by measuring the voltage with a FB GND
high-voltage differential probe. 3 10
The reference value of C11 is 0.47μF to 1 μF.
The time constant of C12 and R12 should be less than R8
500 ns. The values of C12 and R22 are 0.047μF to 0.1 C5
μF, and 2.2 Ω to 10 Ω.
C11 and C12 should be a film type or ceramic C9 PC1
capacitor of low ESR and low leakage current.
● D4 Figure 8-17. FB pin peripheral circuit

D4 should be a Schottky diode of low forward voltage,
VF, so that the voltage between the VB pin and the VS
pin must not decrease to the absolute maximum
ratings of −0.3 V or less.
8.9 Standby Function
The IC has the Standby Function in order to increase
circuit efficiency in light load. When the Standby
16 Q(H)
VGH Function is activated, the IC operates in the burst
15 T1 oscillation mode as shown in Figure 8-18.
VS The burst oscillation has periodic non-switching
C12 D4 intervals. Thus, the burst oscillation mode reduces
VB 14 Cv switching losses. Generally, to improve efficiency under
R12 light load conditions, the frequency of the burst
U1 oscillation mode becomes just a few kilohertz. In
12 D3
REG Q(L) addition, the IC has the Soft-on and the Soft-off
11 Ci Function in order to suppress rapid and sharp fluctuation
VGL of the drain current during the burst oscillation mode.
10 C11 thus, the audible noises can be reduced (see Section
GND 8.9.2).
Bootstrap circuit
Primary-side main
winding current
Figure 8-16. Bootstrap circuit
Switching period
Non-switching period
8.8 Constant Voltage Control Operation

Figure 8-17 shows the FB pin peripheral circuit. The Soft-on Soft-off Time
FB pin is sunk the feedback current by the photo-coupler,
PC1, connected to FB pin. As a result, since the Figure 8-18. Standby waveform

SSC3S910
8.9.1 Standby Mode Changed by External 8.9.2 Burst Oscillation Operation

Signal In standby operation, the IC operates burst oscillation
Figure 8-19 shows the standby mode change circuit where the peak drain current is suppressed by Soft-On
with external signal. Figure 8-20 shows the standby /Soft-off Function in order to reduce audible noise from
change operation waveforms. transformer. During burst oscillation operation, the
When the standby terminal of Figure 8-19 is provided switching oscillation is controlled by SB pin voltage.
with the L signal, Q1 turns off, C10 connected to the SB Figure 8-21 shows the burst oscillation operation
pin is discharged by the sink current, ISB(SNK) = 10 µA, waveforms.
and the SB pin voltage decreases. When the SB pin
voltage decrease to the SB Pin Oscillation Stop Output current
Threshold Voltage, VSB(OFF) = 0.5 V, the operation of the
IC is changed to the standby mode. When SB pin 0
voltage is VSB(OFF) = 0.5 V or less and FB pin voltage is Output voltage
Oscillation Stop Threshold Voltage VFB(OFF) = 0.20 V or
0
less, the IC stops switching operation. When the standby
terminal is provided with the H signal and the SB pin FB pin voltage
voltage increases to Standby Threshold Voltage VFB(ON)
VSB(STB) = 5.0 V or more, the IC returns to normal VFB(OFF)
operation. 0
If the IC starts at the status such as no load, the IC Charged
SB pin voltage by ISB(SRC)
must operate in the normal mode once, and then be into
VSB(ON) Discharged
standby mode. For stable startup in any condition, it is by ISB(SNK)
required the external circuit (Q2, C13, R18, and R19) VSB(OFF)
0
that the SB pin voltage is increased to the REG pin
voltage in startup. Primary-side
main winding
current
12 0
REG
Soft-on Soft-off Time
U1 C11
FB SB R16 C13 R58

3 R8 9 Q1 Figure 8-21. Burst oscillation operation waveforms
R17 PC2
R15 Q2 R18
C5 Standby
C10
Q51 When the SB pin voltage decreases to VSB(OFF) = 0.5 V
R59
C9 PC2 R19 or less and the FB pin voltage decreases to
PC1 GND VFB(OFF) = 0.20 V or less, the IC stops switching
operation and the output voltage decreases.
Figure 8-19. Standby mode change circuit Since the output voltage decreases, the FB pin voltage
increases. When the FB pin voltage increases to the
oscillation start threshold voltage, VFB(ON) = 0.30 V, C10
Standby
H H is charged by ISB(SRC) = −10 µA, and the SB pin voltage
L gradually increases.
0
When the SB pin voltage increases to the oscillation
SB pin voltage
Standby operation start threshold voltage, VSB(ON) = 0.6 V, the IC resumes
Discharging switching operation, controlling the frequency control
by ISB(SNK) VSB(STB) by the SB pin voltage. Thus, the output voltage increases
VSB(OFF)
0 (Soft-on). After that, when FB pin voltage decrease to
FB pin voltage
oscillation stop threshold voltage, VFB(OFF) = 0.20 V, C10
is discharged by ISB(SNK) = 10 µA and SB pin voltage
VFB(OFF)
0
decreases. When the SB pin voltage decreases to
Primary-side VSB(OFF) again, the IC stops switching operation. Thus,
main winding the output voltage decreases (Soft-off).
current
0
The SB pin discharge time in the Soft-on and Soft-off
Function depends on C10. When the value of C10
Switching stop Time increases, the Soft-On/Soft-off Function makes the peak
drain current suppressed, and makes the burst period
longer. Thus, the output ripple voltage may increase
Figure 8-20. Standby change operation waveforms
and/or the VCC pin voltage may decrease.

SSC3S910
If the VCC pin voltage decreases to VCC(BIAS) = 9.8 V,

the Bias Assist Function is always activated, and it U1 VGH T1
results in the increase of power loss (see Section 8.4). 16
RV
Thus, it is necessary to adjust the value of C10 while DETECTOR VS 15
checking the input power, the output ripple voltage, and VDS(L)
the VCC pin voltage. The reference value of C10 is VGL Cv
11
about 0.001 μF to 0.1 μF. Main GND
10
Ci
8.10 Automatic Dead Time Adjustment

Low-side, VDS(L) On dv Off On
Function
dt dt
The dead time is the period when both the high-side Dead time period
and the low-side power MOSFETs are off.
As shown in Figure 8-22, if the dead time is shorter
Figure 8-23. VS pin and dead time period
than the voltage resonant period, the power MOSFET is
turned on and off during the voltage resonant operation.
In this case, the power MOSFET turned on and off in
hard switching operation, and the switching loss Q(H) drain current,
increases. The Automatic Dead Time Adjustment ID(H)
Function is the function that the ZVS (Zero Voltage Flows through body
Switching) operation of Q(H) and Q(L) is controlled diode about 1μs
automatically by the voltage resonant period detection of
IC. The voltage resonant period is varied by the power Figure 8-24. ZCS check point
supply specifications (input voltage and output power,
etc.). However, the power supply with this function is
unnecessary to adjust the dead time for each power
supply specification.
8.11 Brown-In and Brown-Out Function
Figure 8-25 shows the VSEN pin peripheral circuit.
VGL This function detects the mains input voltage, and stops
switching operation during low mains input voltage, to
prevent exceeding input current and overheating.
VGH Dead time
R2 to R4 set the detection voltage of this function.
When the VCC pin voltage is higher than VCC(ON), this
Q(L) D-S voltage, Loss increase by hard function operates depending on the VSEN pin voltage as
switching operation
VDS(L) follows:
● When the VSEN pin voltage is more than V SEN
(ON) = 1.300 V, the IC starts.
● When the VSEN pin voltage is less than VSEN
Voltage resonant period
(OFF) = 1.100 V, the IC stops switching operation.
Figure 8-22. ZVS failure operation waveform

VAC
As shown in Figure 8-23, the VS pin detects the dv/dt
R2
period of rising and falling of the voltage between drain
and source of the low-side power MOSFET, VDS(L), and VDC C1
R3
U1
the IC sets its dead time to that period. This function
1
controls so that the high-side and the low-side power VSEN
MOSFETs are automatically switched to Zero Voltage R4
Switching (ZVS) operation. This function operates in the 10
GND
period from td(MIN) = 0.35 µs to td(MAX) = 1.65 µs. C4
In minimum output power at maximum input voltage
and maximum output power at minimum input voltage,
the ZCS (Zero Current Switching) operation of IC (the Figure 8-25. VSEN pin peripheral circuit
drain current flows through the body diode is about 1 μs
as shown in Figure 8-24), should be checked based on Given, the DC input voltage when the IC starts as
actual operation in the application. VIN(ON), the DC input voltage when the switching

SSC3S910
operation of the IC stops as VIN(OFF). VIN(ON) is calculated

Capacitance area Inductance area
by Equation (9). VIN(OFF) is calculated by Equation (10).
Thus, the relationship between VIN(ON) and VIN(OFF) is
Equation (11).
Impedance
Operating area
R2 + R3 + R4
VIN(ON) ≈ VSEN(ON) × (9)
R4
f0
Resonant fresuency
R2 + R3 + R4
VIN(OFF) ≈ VSEN(OFF) × (10) Hard switching Sift switching
R4
VSEN(OFF)
VIN(OFF) ≈ × VIN(ON) (11)
VSEN(ON)
The detection resistance is calculated from Equation Uncontrollable operation

(9) as follows:
Figure 8-26. Operating area of resonant power supply
VIN(ON) −VSEN(ON)
R2 + R3 ≈ × R4 (12)
VSEN(ON)
The resonant current is detected by the RC pin, and
the IC prevents the capacitive mode operation.
Because R2 and R3 are applied high DC voltage and When the capacitive mode is detected, the C7
are high resistance, the following should be considered: connected to CL pin is charged by ICL(SRC) = −17 μA.
● Select a resistor designed against electromigration When the CL pin voltage increases to VCL(OLP), the OLP
according to the requirement of the application, or is activated and the switching operation stops. During
● Use a combination of resistors in series for that to the OLP operation, the intermittent operation by UVLO
reduce each applied voltage is repeated (see Section 8.17).
The detection voltage is changed to VRC1 = ±0.10 V or
The reference value of R2 is about 10 MΩ. VRC2 = ±0.50 V depending on the load as shown in
C4 shown in Figure 8-25 is for reducing ripple Figure 8-28 and Figure 8-29. The Capacitive Mode
voltage of detection voltage and making delay time. The Operation Detection Function operations as follows:
value is 0.1 µF or more, and the reference value is about
0.47 µF. ● Period in which the Q(H) is ON
The value of R2, R3 and R4 and C4 should be Figure 8-27 shows the RC pin waveform in the
selected based on actual operation in the application. inductance area, and Figure 8-28 and Figure 8-29
shows the RC pin waveform in the capacitance area.
In the inductance area, the RC pin voltage doesn’t
cross the plus side detection voltage in the downward
8.12 Capacitive Mode Detection Function direction during the on period of Q(H) as shown in
The resonant power supply is operated in the Figure 8-27.
inductance area shown in Figure 8-26. In the capacitance On the contrary, in the capacitance area, the RC pin
area, the power supply becomes the capacitive mode voltage crosses the plus side detection voltage in the
operation (see Section 8.1). In order to prevent the downward direction. At this point, the capacitive
operation, the minimum oscillation frequency is needed mode operation is detected. Thus, Q(H) is turned off,
to be set higher than f0 on each power supply and Q(L) is turned on, as shown in Figure 8-28 and
specification. Figure 8-29.
However, the IC has the capacitive mode operation
Detection Function kept the frequency higher than f0. ● Period in which the Q(L) is on
Thus, the minimum oscillation frequency setting is Contrary to the above of Q(H), in the capacitance area,
unnecessary and the power supply design is easier. In the RC pin voltage crosses the minus side detection
addition, the ability of transformer is improved because voltage in the upward directiont during the on period
the operating frequency can operate close to the resonant of Q(L) At this point, the capacitive mode operation is
frequency, f0. detected. Thus, Q(L) is turned off and Q(H) is turned on.
As above, since the capacitive mode operation is

detected by pulse-by-pulse and the operating frequency
is synchronized with the frequency of the capacitive

SSC3S910
mode operation, and the capacitive mode operation is the equivalent to ICC(ST) = 6.0 mA.
prevented. In addition to the adjusting method of ROCP,
C3, and R6 in Section 8.16, ROCP, C3, and R6 should be D7
6 mA
adjusted so that the absolute value of the RC pin voltage (ICC(ST))
increases to more than |VRC2| = 0.50 V under the
condition caused the capacitive mode operation easily,
18
such as startup, turning off the mains input voltage, or Main input →off D8 C1 R2 ST
output shorted. The RC pin voltage must be within the
absolute maximum ratings of −6 to 6 V R3 U1
VSEN
1 GND
VDS(H) OFF
C4 R4 10
ON
RC pin
voltage
+VRC
Figure 8-30. Input capacitor discharge
0
8.14 Reset Detection Function

Figure 8-27. RC pin voltage in inductance area In the startup period, the feedback control for the
output voltage is inactive. If a magnetizing current may
not be reset in the on-period because of unbalanced
VDS(H) OFF
operation, a negative current may flow just before a
power MOSFET turns off. This causes a hard switching
0 ON
operation, increases the stresses of the power MOSFET.
Capacitive mode
RC pin operation detection Where the magnetizing current means the circulating
voltage +VRC2
+VRC1 current applied for resonant operation, and flows only
0 into the primary-side circuit. To prevent the hard
switching, the IC has the reset detection function.
Figure 8-32 shows the high-side operation and the
reference drain current waveforms in a normal resonant
Figure 8-28. High side capacitive mode detection in operation and a reset failure operation. To prevent the
light load hard switching operation, the reset detection function
operates such as an on period is extended until the
VDS(H)
absolute value of a RC pin voltage, |VRC1|, increases to
OFF
0.10 V or more. When the on period reaches the
0 ON maximum reset time, tRST(MAX) = 15 μs, the on-period
Capacitive mode expires at that moment, i.e., the power MOSFET turns
RC pin operation detection off (see Figure 8-31).
voltage +VRC2
+VRC1
0 VGH Pin
Voltage Low High
VGL Pin High Low
Voltage
Figure 8-29. High side capacitive mode detection in Turning-on
heavy load in negative drain current
ID(H)
Reset failure waveform
VRC= +0.1V
8.13 Input Electrolytic Capacitor 0
Discharge Function
Figure 8-30 shows an application that residual voltage Expanded
on-period
of the input capacitor, C1, is reduced after turning off
the mains input voltage. R2 is connected to the AC input Normal on-period
lines through D7 and D8. Just after turning off the mains tRST(MAX)
input voltage, the VSEN pin voltage decreases to
VSEN(OFF) = 1.100 V according to a short time of the time Figure 8-31. Reset Detection Operation Example
constant with R2 to R4 and C4, and C1 is discharged by at High-side On Period

SSC3S910
○ Normal resonant operation ● Reset failure operation

B
ID(H) ID(H)
C F
0
Magnetizing
A current
Point A Point D D E
VDS(H)=0V VDS(H)=0V
Q(H) Q(H)
Off Lr Off Lr
Lp Lp
Q(L) ID(H) Q(L) ID(H)

Off Cv Off Cv
Point B Ci Point E Ci
VDS(H)=0V VDS(H)=0V
Q(H) Q(H)
On Lr On Lr
Lp Lp
Q(L) ID(H) Q(L) ID(H)

Off Cv Off Cv
Ci Ci
Point C Point F
Recovery current
of body diode
Q(H) Q(H)
ID(H)
Off Lr Off Lr
Lp Lp
Q(L) Q(L)
Cv Cv
Off On
Ci Ci
Turning on at VDS(L)= 0V results in　soft-switching Turning on at VDS(L) >> 0V results in hard-switching
Figure 8-32. Reference High-side Operation and Drain Current Waveforms in Normal Resonant Operation
and in Reset Failure Operation

SSC3S910
8.15 Overvoltage Protection (OVP)

VOC(L) C3 + Ci
When the voltage between the VCC pin and the GND R OCP ≈ ×( ) (14)
ID(H) C3
pin is applied to the OVP threshold voltage,
VCC(OVP) = 32.0 V, or more, the Overvoltage Protection
(OVP) is activated, and the IC stops switching operation
in protection mode. After stopping, the VCC pin voltage ● R6 and C8 are for high frequency noise reduction.
decreases to VCC(OFF) = 8.8 V, the Undervoltage Lockout R6 is 100 Ω to 470 Ω. C6 is 100 pF to 1000 pF.
(UVLO) Function is activated, and the IC reverts to the
state before startup again. The OCP operation has two-step threshold voltage as
After that, the startup circuit is activated, the VCC pin follows:
voltage increases to VCC(ON) = 14.0 V, and the IC restarts.
During the protection mode, restart and stop are repeated. Step I, RC pin threshold voltage (Low), VRC(L):
When the fault condition is removed, the IC returns to This step is active first. When the absolute value of
normal operation automatically. When the auxiliary the RC pin voltage increases to more than |VOC(L) | = 1.50
winding supplies the VCC pin voltage, the OVP is able V, C6 connected to the CSS pin is discharged by
to detect an excessive output voltage, such as when the ICSS(L) = 1.8 mA. Thus, the switching frequency increases,
detection circuit for output control is open in the and the output power is limited. During discharging C6,
secondary-side circuit because the VCC pin voltage is when the absolute value of the RC pin voltage decreases
proportional to the output voltage. to |VRC(L)| or less, the discharge stops.
The output voltage of the secondary-side circuit at
OVP operation, VOUT(OVP), is approximately given as Step II, RC pin threshold voltage (High-speed),
below: VRC(S):
This step is active second. When the absolute value of
VOUT(NORMAL) the RC pin voltage increases to more than |VRC(S) | = 2.30
VOUT(OVP) = × 32(V) (13) V, the high-speed OCP is activated, and power
VCC(NORMAL)
MOSFETs reverse on and off. At the same time, C6 is
discharged by ICSS(S) = 20.5 mA. Thus, the switching
where, frequency quickly increases, and the output power is
VOUT(NORMAL) : Output voltage in normal operation quickly limited. This step operates as protections for
VCC(NORMAL): VCC pin voltage in normal operation exceeding overcurrent, such as the output shorted. When
the absolute value of the RC pin voltage decreases to
|VRC(S)| or less, the operation is changed to the above
8.16 Overcurrent Protection (OCP) Step I.
The Overcurrent Protection (OCP) detects the drain
When OLP Input Voltage Compensation is used, CL
current, ID, on pulse-by-pulse basis, and limits output
pin voltage is needed to reach the threshold voltage of
power. In Figure 8-33, this circuit enables the value of
Overload Protection (OLP), VCL(OLP), in the state that RC
C3 for shunt capacitor to be smaller than the value of Ci
pin voltage is less than VRC(L). Therefore, when output
for current resonant capacitor, and the detection current
power increases, the OLP is activated (see Section 8.17).
through C3 is small. Thus, the loss of the detection
When the input voltage is constant like PFC output, OLP
resistor, ROCP, is reduced, and ROCP is a small-sized one
Input Voltage Compensation is unnecessary. Therefore,
available. There is no convenient method to calculate the
when output power increases, the above OCP operation
accurate resonant current value according to the mains
(Step I and Step II ) is activated.
input and output conditions, and others. Thus, ROCP, C3,
and C6 should be adjusted based on actual operation in Q(H)
the application. The following is a reference adjusting VGH
method of ROCP, C3, R6, and C8: 16
T1
VS
15
● C3 and ROCP U1 Q(L)
C3 is 100pF to 330pF (around 1 % of Ci value). VGL Cv I(H)
ROCP is around 100 Ω. 11
Given the current of the high side power MOSFET at 10
CSS RC PL GND
ON state as ID(H). ROCP is calculated Equation (14). 5 7 8 R7 Ci
The detection voltage of ROCP is used the detection of C3
the capacitive mode operation (see Section 8.12). R6
R5
Therefore, setting of ROCP and C3 should be taken
account of both OCP and the capacitive mode C6 C8 ROCP
operation.
Figure 8-33. RC pin peripheral circuit

SSC3S910
8.17 Overload Protection (OLP) with Input

RC pin voltage
Voltage Compensation
VRC(L)
0
8.17.1 Overload Protection (OLP) VRC(L)
Figure 8-34 shows the Overload Protection (OLP) CL pin voltage Charged by ICL(SRC)
waveforms in the case without OLP Input Voltage VCL(OLP)
Compensation Function.
When CL pin voltage becomes the threshold voltage
of OLP, VCL(OLP), the OLP is activated and the switching 0
operation stops. During the OLP operation, the VGH/VGL

intermittent operation by UVLO is repeated (see Section
8.15).
0
When the fault condition is removed, the IC returns to
normal operation automatically.
VCL(OLP) is depended on the input voltage by OLP Figure 8-35. OLP operation waveform
Input Voltage Compensation Function as shown in without OLP Input Voltage Compensation Function
Section 8.17.2.
● With OLP Input Voltage Compensation Function
RC pin voltage CL pin voltage is needed to reach VCL(OLP) in the state
VRC(L) that RC pin voltage is less than VRC(L).
0 When CL pin voltage reaches VCL(OLP) in one of the
VRC(L) following condition, the OLP is activated as shown in
Figure 8-36.
CL pin voltage
VCL(OLP) 1) The output power increases, CL pin voltage
increases to VCL(OLP) which is constant.
0 2) The input voltage increases, VCL(OLP) depending
on OLP Input Voltage Compensation decreases to
VCC pin voltage CL pin voltage.
VCC(ON)
VCC(OFF)
Input voltage
0
VGH/VGL 0
RC pin voltage
0 VRC(L)
Figure 8-34 . OLP waveform without OLP Input VRC(L)

Voltage Compensation Function CL pin voltage VCL(OLP) decreases
to CL pin voltage.
VCL(OLP)
The trigger of OLP is different according to the case
0
with OLP Input Voltage Compensation Function or
VGH/VGL Case 1) Case 2)
without it.
● Without OLP Input Voltage Compensation 0
Function
Figure 8-35 shows the OLP operation waveforms. Figure 8-36. OLP operation waveform with OLP Input
When the absolute value of RC pin voltage increases Voltage Compensation Function
to |VRC(L)| = 1.50 V by increasing of output power, the
Overcurrent Protection (OCP) is activated. After that,
the C7 connected to CL pin is charged by
ICL(SRC) = −17 μA. When the OCP state continues and
CL pin voltage increases to VCL(OLP), the OLP is
activated.

SSC3S910
8.17.2 OLP Input Voltage Compensation Input voltage AC265V

Function AC85V
In the case without OLP Input Voltage Compensation 0
RC pin voltage OLP active OLP active
Function, when the absolute value of RC pin voltage
VRC(L)
increases to |VRC(L)| = 1.50 V, the capacitor connected to
CS pin is charged. When CS pin voltage increases to 0
VCL(OLP), the OLP is activated (see Figure 8-35).
VRC(L)
In the constant voltage control of current resonant
topology, when the input voltage increases, the resonant CL pin voltage
VCL(OLP)
frequency increases, and the peak drain current
decreases. Since |VRC(L)| is a fixed value, when output
power increases at the constant rate, there are the output 0
power difference at OLP operation in high and low input VGH/VGL

voltages as shown in Figure 8-37.In the universal mains 0
input voltage, the output power at OLP operation is very
large in the maximum input voltage, and component Output power Output power difference
that occurs by input voltage
stresses are increased by heating.
Therefore, the IC has OLP Input Voltage
0
Compensation Function that the output power difference
at OLP operation is limited in input voltages, and can
realize power supply of universal mains input voltage Figure 8-38. OLP operation waveforms according to
(85 VAC to 265VAC). input voltage (with OLP Input Voltage Compensation)
As shown in Figure 8-38, this function compensates
the OLP threshold voltage, VCL(OLP), depending on input
● PL Pin and CL Pin Setup:
voltage, and is used so that CL pin voltage reaches
The primary-side winding current as shown in Figure
VCL(OLP) in the state that RC pin voltage is less than
8-39 includes the magnetizing current not transferred
VRC(L).
to the secondary-side circuit, and the load current
proportional to the output current.
Input voltage AC265V The current separated from the primary-side winding
AC85V current by C3 flows to the PL pin. As shown in Figure
0
8-40, the primary-side winding current flows to the
RC pin voltage OLP active OLP active C7 connected to CL pin during the high side power
VRC(L) MOSFET turning on. The magnetizing current
becomes zero by charging and discharging. Only the
0
load current is charged to C7. As a result, the CL pin
VRC(L) voltage is proportional to the output current.
CL pin voltage On actual operation of the application, C7 connected
VCL(OLP) to the CL pin should be adjusted so that ripple voltage
of the CL pin reduces. R7 connected to the PL pin
0
should be adjusted so that the OLP at the minimum
VGH/VGL mains input voltage is activated before the OCP
limited by the low threshold voltage of OCP, VRC(L).
0 The PL pin voltage and the CL pin voltage must be
Output power difference within the absolute maximum ratings of −0.3 to 6 V,
Output power that occurs by input voltage
by adjusting R7, in the OCP operation point at the
minimum mains input voltage.
0
Figure 8-37. OLP operation waveforms according to

input voltage (without OLP Input Voltage
Compensation)

SSC3S910
● VSEN Pin Setup:

The VSEN pin detects the mains input voltage.
Both VSEN and the setting voltage in Section 8.11 ● Without OLP Input Voltage Compensation Func-
Brown-In and Brown-Out Function are determined by tion:
R2, R3, and R4. Both of them should be adjusted Figure 8-42 shows the circuit that OLP Input Voltage
based on actual operation in the application. Compensation Function is canceled. The resistance of
between PL pin and GND pin is about 100 kΩ.
Mains Input
Load current
C1 Q(H) Magnetizing current Q(H)
VGH Output current
U1 T1
16
R2 C1 VGH T1
VS 16
15 Q(L) U1
R2 VS
R3 VGL 15 Q(L)
11 Cv
1 VSEN VGL
GND 10 R3 11 Cv
CL RC PL
6 7 8 R7 Ci C3 10
1 VSEN
GND
R6 CL RC PL Ci
R4
6 7 8 C3
C4 C7 C8 ROCP
R4 About R6
100kΩ
Figure 8-39. the peripheral circuit of VSEN, PL, CL
pin C4 C7 C8 ROCP
Figure 8-42. The IC peripheral circuit without OLP

VGH pin Input Voltage Compensation Function
voltage
ROCP voltage 0V
8.18 Thermal Shutdown (TSD)

Load current
CL pin source
Magnetizing
current
When the junction temperature of the IC reach to the
current 0A
Thermal Shutdown Temperature T j(TSD) = 140 °C (min.),
Proportional Thermal Shutdown (TSD) is activated and the IC stops
CL pin voltage voltage to
0V output current switching operation. When the VCC pin voltage is
decreased to VCC(P.OFF) = 8.8 V or less and the junction
temperature of the IC is decreased to less than Tj(TSD),
Figure 8-40. The waveforms of CL pin the IC restarts.
During the protection mode, restart and stop are
● Relationship Between VCL(OLP) and VSEN: repeated. When the fault condition is removed, the IC
VCL(OLP) is OLP threshold voltage of CL pin. VSEN is returns to normal operation automatically.
VSEN pin voltage. There are relationship between
VCL(OLP) and VSEN as shown in Figure 8-41.
4
VCL(OLP) (V)
0
1 2 3 4 5 6
VSEN (V)
Figure 8-41. VSEN pin voltage versus typical OLP

threshold voltage, VCL(OLP)

SSC3S910
9. Design Notes waveforms should be checked that the dead time is

ensured as shown in Figure 9-2.
9.1 External Components DS

Drain
Take care to use the proper rating and proper type of Gate
components.
RA
RGS Source
9.1.1 Input and Output Electrolytic
Capacitors
Apply proper derating to a ripple current, a voltage,
and a temperature rise. It is required to use the high Figure 9-1. Power MOSFET Peripheral Circuit
ripple current and low impedance type electrolytic
capacitor that is designed for switch mode power
supplies. High-side
Gate
Vth(min.)
9.1.2 Resonant Transformer
The resonant power supply uses the leakage Low-side Dead time Dead time
inductance of a transformer. Therefore, to reduce the Gate
effect of the eddy current and the skin effect, the wire of
transformer should be used a bundle of fine litz wires. Vth(min.)
9.1.3 Current Detection Resistor, ROCP Figure 9-2. Dead Time Confirmation
To reduce the effect of the high frequency switching

current flowing through ROCP, choose the resister of a 9.2 PCB Trace Layout and Component
low internal inductance type. In addition, its allowable
dissipation should be chosen suitable.
Placement
The PCB circuit design and the component layout
significantly affect a power supply operation, EMI
9.1.4 Current Resonant Capacitor, Ci noises, and power dissipation. Thus, to reduce the
impedance of the high frequency traces on a PCB (see
Since a large resonant current flows through Ci, Ci Figure 9-3), they should be designed as wide trace and
should be used a low loss and a high current capability small loop as possible. In addition, ground traces should
capacitor such as a polypropylene film capacitor. In be as wide and short as possible so that radiated EMI
addition, Ci must be taken into account its frequency levels can be reduced.
characteristic because a high frequency current flows.
9.1.5 Gate Pin Peripheral Circuit

The VGH and VGL pins are gate drive outputs for
external power MOSFETs. These peak source and sink
currents are –540 mA and 1.50 A, respectively.
To make a turn-off speed faster, connect the diode, DS,
as shown in Figure 9-1. When RA and DS is adjusted, the
following contents should be taken into account: the
power losses of power MOSFETs, gate waveforms (for
a ringing reduction caused by a pattern layout, etc.), and Figure 9-3. High frequency current loops (hatched
EMI noises. To prevent the malfunctions caused by areas)
steep dv/dt at turn-off of power MOSFETs, connect RGS
of 10 kΩ to 100 kΩ between the Gate and Source pins of
the power MOSFET with a minimal length of PCB
traces. When these gate resistances are adjusted, the gate

SSC3S910
Figure 9-4 shows the circuit design example. The from each other, a film capacitor Cf (about 0.1 μF to
PCB trace design should be also taken into account as 1.0 μF) should be connected between the VCC and
follows: GND pins with a minimal length of PCB traces.
1) Main Circuit Trace 4) Trace of Peripheral Components for the IC Control

The main traces that switching current flows should These components should be placed close to the IC,
be designed as wide trace and small loop as possible. and be connected to the corresponding pin of the IC
with as short trace as possible.
2) Control Ground Trace
If the large current flows through a control ground, it 5) Trace of Bootstrap Circuit Components
may cause varying electric potential of the control These components should be connected to the IC pin
ground; and this may result in the malfunctions of the with as short trace as possible. In addition, the loop
IC. Therefore, connect the control ground as close and for these should be as small as possible.
short as possible to the GND pin at a single-point
ground (or star ground) that is separated from the 6) Secondary Side Rectifier Smoothing Circuit Trace
power ground. The traces of the rectifier smoothing loops carry the
switching current. Thus it should be designed as wide
3) VCC Trace trace and small loop as possible.
The trace for supplying power to the IC should be as
small loop as possible. If C3 and the IC are distant
(1)Main trace should

be wide and short CY
BR1
VAC
C1
R4 R3 R2 (6)Main trace of
secondary side should
VSEN ST be wide and short
1 18
C4 T1
Cf D53
VCC NC
C5 2 17 R15 D5
C9
R8 FB VGH C52
PC1 3 16 Q(H)
R10
SSC3S910
R11
CADJ NF VS
4 15
R5 C12 D4
CSS VB CV
C6 5 14
R12
CL NC
C7 6 13
D3
D54
U1
C8
RC REG
ROCP 7 12 R16 D6
(4)Peripheral
Q(L) (5)Boot strap trace should
R6 R7 PL VGL C11 Ci be small loop
components for
IC control should
8 11
R13 C3
place near IC R14
Standby SB GND
9 10
signal D1
A R1
(2)GND trace for IC should be C2
connected at a single point
(3)Loop of VCC and C2 should be short
Figure 9-4. Peripheral circuit trace example around the IC

SSC3S910
10. Pattern Layout Example

The following show the PCB pattern layout example and the schematic of circuit using the products of SSC3S900
series. The above circuit symbols correspond to these of Figure 10-1.
(1)Main trace should be
(5)Boot strap trace should be (6)Main trace of secondary side
wide and short
small loop should be wide and short
S2-1
Lp
S2-2
D
S1-1
S1-2
(2)GND trace for IC should be (4)Peripheral components for IC (3)Loop of VCC and C2
connected at a single point control should placed near IC should be short
Figure 10-1. PCB circuit trace layout example
CN1
F101
L101 L102
R101 R102
C102
VR101
CX101
CX102
C101
R103
TH101 J2
D303
R201 R202 R203 R204 J5//J7 T1 CN602
IC201
12 24V
SSC3S910
C203 J6 Q201 S3 R613
1 VSEN ST 18 C302 C309 C604
J3//J8 R213
R219
2 VCC NC 17 13
R214
C204 J26
S4 D304 R309
3 FB VGH 16 1
R212 R209 D202 14
4 NF VS 15
C201 R308
J13 Q202 J27 J24
C103 C104 5 CSS VB 14
C205 P
D204 D203 D301 J29
6 CL NC 13 R215 C211
C206 J33 CN601
R230
7 RC REG 12 7 12V
R211
C207
J11 3
R220
8 PL VGL 11 C303 R301

R210 S1 J28
C212 D205 C605
R221
D201 9 SB GND 10 R602

R225
8,9 C301 C308 R609 R610

J21 R306
C218 S2
J12
C214
Q601 R302 PC201
10 R307
J1 J20,
J9 J23 POWER_ CN401
C215 C217 J30,
D302 J32 C304 ON/OFF
J24
J14 6 R604 J31
R616 R606
R216 D206 R206
R208 D R303 C305
R207 D207 J33 D601
Q204
J18 Q301 R614
TR1 4 R310
R218 R217 C225 Q602
R601
J15
D208 Q606
PC202
C208 C209 PC201 C202 C210 C213 PC202 D602 R603 C601 R605 R305 R304 C606 R615
C216
PSA50112_Rev.1.1
Figure 10-2. Circuit schematic for PCB circuit trace layout

SSC3S910
11. Reference Design of Power Supply

As an example, the following show the power supply specification, the circuit schematic, the bill of materials, and the
transformer specification. The values in bill of materials are reference design. They are necessary to be adjusted based
on actual operation in the application.
● Power supply specification

IC SSC3S910
Input voltage (Output of PFC) DC 390 V
Maximum output power 227.1 W
Output 1 13 V / 6.7 A
Output 2 100 V / 1.4A
● Circuit schematic
PFC OUT
D303
R201 R202 R203 R204 J5//J7 T1 CN602
IC201
12 100V
SSC3S910
C203 J6 Q201 S3 R613
1 VSEN ST 18 C302 C309 C604
J3//J8 R213
R219
2 VCC NC 17 13
R214
C204 J26
S4 D304 R309
3 FB VGH 16 1
R212 R209 D202 14
4 NF VS 15
C201 R308
J13 Q202 J27 J24
C103 C104 5 CSS VB 14
C205 P
D204 D203 D301 J29
6 CL NC 13 R215 C211
C206 J33 CN601
R230
7 RC REG 12 7 13V
R211
C207
J11 3
R220
8 PL VGL 11 C303 R301

R210 S1 J28
C212 D205 C605
R221
9 SB GND 10 R602
R225
8,9 C301 C308 R609 R610

J21 R306
C218 S2
J12
C214
Q601 R302 PC201
10 R307
J1 J20,
J9 J23 POWER_ CN401
C215 C217 J30,
D302 J32 C304 ON/OFF
J24
6 R604 J31
J14 D206 R206
C226 D R303 C305
J33 D601 R616
R216
Q204 Q301 R614
4 Q602 R310
J18 R601
R208
R217 R231
C202
C225
R218 Q606
PC202 PC202
C209 R232
Q205 C216 R305 R304 C606 R615
PC201 C210 D602
● Bill of materials
Symbol Part type Rating Recommended Sanken Parts
C103 Electrolytic 450 V, 120 μF
C201 Chip 50 V, 0.1 μF, 2012
C202 Chip 50 V, 1.0 nF, 2012
C203 Ceramic Open
C204 Chip 50 V, 2.2 nF, 2012
C205 Chip 50 V, 0.47 μF, 2012
C206 Chip 50 V, 0.22 μF, 2012
C207 Chip 50 V, 220 pF, 2012
C209 Chip 50 V, 0.22 μF, 2012
C210 Chip 50 V, 4.7 nF, 2012
C211 Ceramic 1 kV, 100 pF
C212 Chip 50 V, 1 μF, 2012
C214 Ceramic 1 kV, 100 pF
C215 Polypropylene Film 630 V, 27 nF
C216 Ceramic, Y1 AC300 V, 2200 pF
C217 Polypropylene Film Open
C225 Electrolytic 50 V, 100 μF,
C226 Chip 50 V, 0.01 μF, 2012

SSC3S910

C303 Chip Open
C304 Chip Open
C305 Chip 50 V, 0.22 μF, 2012
C309 Electrolytic Open
C606 Chip Open
D202 Schottky 40 V, 1 A, SJP SJPB-D4
D204 Fast recovery 600 V, 0.5 A, Axial AG01A
D206 Fast recovery 200 V, 1 A, Axial AL01Z
D301 Schottky 150 V, 30 A, TO220F FMEN-230A
D302 Schottky 150 V, 30 A, TO220F FMEN-230A
D303 Fast recovery 200 V, 5 A, TO220F FML-14S
D304 Fast recovery 200 V, 5 A, TO220F FML-14S
D602 Chip 0Ω ± 5 %, 1/8 W, 2012
IC201 IC SSC3S910
PC201 Photo-coupler PC123 or equiv
PC202 Photo-coupler PC123 or equiv
Q201 Power MOSFET 10 A, 600 V, TO220
Q202 Power MOSFET 10 A, 600 V, TO220
Q204 PNP transistor –600 mA, –60 V, SOT23 KST2907A
Q205 Power MOSFET N-channel, 60 V, 2 A, 0.2 Ω 2SK2961
Q301 Shunt regulator VREF = 2.50 V (TL431or equiv)
Q601 PNP transistor 0.6A, – 60V, SOT23
Q602 NPN transistor 0.6 A, 40 V, SOT23
Q606 NPN transistor 0.8 A, 60 V SOT-23/TO-92
R201* Chip 1.0 MΩ ± 5 %, 1/4 W, 3216
R202* Chip 1.0 MΩ ± 5 %, 1/4 W, 3216
R203* Chip 1.0 MΩ ± 5 %, 1/4 W, 3216
R204* Chip 910 kΩ + 47 kΩ ± 5 %, 1/4 W, 3216
R206 Chip 0 Ω ± 5 %, 1/4 W, 3216
R208 Chip 22 kΩ ± 5 %, 1/8 W, 2012
R209 Chip 47 kΩ ± 5 %, 1/8 W, 2012
R210 Chip 100 Ω ± 5 %, 1/8 W, 2012
R211 Chip 2.2 Ω ± 5 %, 1/8 W, 2012
R212 Chip 33 kΩ ± 5 %, 1/8 W, 2012
R213 Chip 100 Ω ± 5 %, 1/8 W, 2012
R214 Chip 10 kΩ ± 5 %, 1/8 W, 2012
R215 Chip 2.2 Ω ± 5 %, 1/8 W, 2012
R216 Chip 47 kΩ ± 5 %, 1/8 W, 2012
R217 Chip 22 kΩ ± 5 %, 1/8 W, 2012
R218 Chip 100 kΩ ± 5 %, 1/8 W, 2012
R219 Chip 2.2 Ω ± 5 %, 1/8 W, 2012
R220 Chip 10 kΩ ± 5 %, 1/8 W, 2012
R221 Chip 100 kΩ ± 5 %, 1/8 W, 2012
R225 Chip 150 Ω ± 5 %, 1/8 W, 2012
R230 Chip 100 Ω ± 5 %, 1/8 W, 2012
R231 Chip 100 kΩ ± 5 %, 1/8 W, 2012
* Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against
electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement
of the application.

SSC3S910

R232 Chip 47 kΩ ± 5 %, 1/8 W, 2012
R301 Chip 5.6 kΩ ± 5 %, 1/8 W, 2012
R302 Chip 4.7 kΩ ± 5 %, 1/8 W, 2012
R303 Chip 10 kΩ ± 5 %, 1/8 W, 2012
R304 Chip 2.2 kΩ ± 5 %, 1/8 W, 2012
R305 Chip Open
R306 Chip 22 kΩ ± 5 %, 1/8 W, 2012
R307 Chip 20 kΩ ± 5 %, 1/8 W, 2012
R308* Chip Open
R309* Chip Open
R310 Chip 15 kΩ ± 5 % , 1/8 W, 2012
R601 Chip 1 kΩ ± 5 %, 1/10 W, 2012
R602 Chip 2.2 kΩ ± 5 %, 1/8 W, 2012
R604 Chip 4.7kΩ ± 5 %, 1/8 W, 2012
R609 Chip Open
R610 Chip Open
R613* Chip Open
R614 Chip 22 kΩ+4.7 kΩ ± 5 %, 1/8 W, 2012
R615 Chip Open
R616 Chip 0 Ω ± 5 %, 1/8 W, 2012
T1 Transformer See the specification
*Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against
electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the
requirement of the application.
● Transformer specification
▫ Primary inductance, LP : 250 μH
▫ leakage inductance, Lr : 80 μH
▫ Core size : EER-42
▫ Winding specification
Winding Symbol Number of turns (T) Wire diameter (mm) Construction
Primary winding Lp 33 Litz φ0.1 mm 30 strands Solenoid winding
Auxiliary winding D 3 TIW φ0.2 mm Space winding
Output winding 1-1 S1-1 2 Litz φ0.1 mm 70 strands Bifilar winding
(12) VOUT2(+)
VS (1) S2-1
(11) VOUT2(-)
Primary side Secondary side Lp (11) VOUT2(-)
C215//C217 (2) S2-2

D (10) VOUT2(+)
(8) VOUT1(+)
Lp GND (3)
S2-1, S2-2
S1-1
S1-1, S1-2 D (7) VOUT1(-)
Bobbin Bobbin VCC (4) (6) VOUT1(-)
Core side Core side S1-2
(5) VOUT1(+)
Cross-section view
: Start at this pin

SSC3S910
Important Notes
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation
equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan
(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and
losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all
such uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any
human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.
Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products.
● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third
party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you,
users or any third party, resulting from the Information.
● No information in this document can be transcribed or copied or both without Sanken’s prior written consent.
● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and
any other rights of Sanken.
● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,
including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty
of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is
delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course
of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, and reliability).
● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and
regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU
RoHS Directive, so as to be in strict compliance with such applicable laws and regulations.
● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not
limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or
providing them for non-residents, you must comply with all applicable export control laws and regulations in each country
including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and
follow the procedures required by such applicable laws and regulations.
● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the
relevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).
DSGN-CEZ-16003


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LLC Current-Resonant Off-Line Switching Controller

SSC3S910 Data Sheet

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 1

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 2

1. Absolute Maximum Ratings

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 3

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 4

Characteristic Symbol Conditions Pins Min. Typ. Max. Unit

RC Pin Threshold Voltage 2.15 2.30 2.45 V

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 5

Characteristic Symbol Conditions Pins Min. Typ. Max. Unit

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 6

18 High Side Driver 14

4. Pin Configuration Definitions

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 7

Figure 5-1. Typical application circuit

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 8

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 9

8. Operational Description The frequency in which Ż becomes minimum value is

Figure 8-1. RLC Series Resonant Circuit 1

LR is the inductance of the resonant inductor,

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 10

VF(L) is the forwerd voltage of Q(L), S1 IS1

VCi is Ci voltage, and OFF

The current resonant power supply operations in

At the same time, the energy is transferred to the

SSC3S910 - DSJ Rev.1.8 SANKEN ELECTRIC CO., LTD. 11

4) Period D Figure 8-7. Operation in Period C

circuit is stopped. ON –ID(L)

7) After the period F

Figure 8-10. Operation in Period F

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8.2 Startup Operation 8.3 Undervoltage Lockout (UVLO)

After that, the startup circuit stops automatically, in

VCC pin voltage Startup success

When the conditions of Section 8.2 are fulfilled, the

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● D4 Figure 8-17. FB pin peripheral circuit

8.8 Constant Voltage Control Operation

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8.9.1 Standby Mode Changed by External 8.9.2 Burst Oscillation Operation

FB SB R16 C13 R58

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If the VCC pin voltage decreases to VCC(BIAS) = 9.8 V,

8.10 Automatic Dead Time Adjustment

Figure 8-22. ZVS failure operation waveform

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operation of the IC stops as VIN(OFF). VIN(ON) is calculated

The detection resistance is calculated from Equation Uncontrollable operation

As above, since the capacitive mode operation is

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8.14 Reset Detection Function

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○ Normal resonant operation ● Reset failure operation

Q(L) ID(H) Q(L) ID(H)

Q(L) ID(H) Q(L) ID(H)

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8.15 Overvoltage Protection (OVP)