http://www.sanken-ele.co.

jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Features Package
･ Low on-state resistance 5.0mΩ VGS=10V TO220S
･ Built-in gate protection diode
･SMD PKG

Applications
･DC－DC converter
･Mortar drive

Internal Equivalent Circuit

Ｄ(2) Key Specifications
･V(BR)DSS = 60V (ID=100uA)
Ｇ(1) ･RDS(ON) = 5mΩ max (ID=35A / VGS=10V)

Ｓ(3)
Absolute maximum ratings
(Ta=25°C）
Characteristic Symbol Rating Unit

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Continuous Drain Current ID ±85 A

Pulsed Drain Current ID(pulse) *１ ±170 A

Maximum Power Dissipation PD 1 0 0 (Tc=2 5 °C) W

Single Pulse Avalanche Energy EAS *2 400 mJ

Maximum avalanche current IAS 25 A

Channel Temperature Tch 150 °C

Storage Temperature Tstg -5 5 ~ +1 5 0 °C

Maximum Drain to Source dv/dt 1 dv/dt 1*2 0 .5 V/ns

Peak diode recovery dv/dt 2 dv/dt 2*3 3 V/ns

Peak diode recovery di/dt di/dt*3 100 A/µs

*1 PW≤100µsec. duty cycle≤1％
*2 VDD=20V, L=1mH, IL=25A, unclamped, Rg=50Ω，See Fig.1
*3 ISD=25A，See Fig.2

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1
 http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Electrical characteristics
(Ta=25°C）
Limits
Characteristic Symbol Test Conditions Unit
MIN TYP MAX
ID=100μA
Drain to Source breakdown Voltage V(BR)DSS 60 V
VGS=0V

Gate to Source Leakage Current IGSS VGS=±15V ±10 µA

VDS=60V
Drain to Source Leakage Current IDSS 100 µA
VGS=0V
VDS=10V,
Gate Threshold Voltage VTH 2.0 3.4 4.0 V
ID=1mA
VDS=10V
Forward Transconductance Re(yfs) 30 80 S
ID=35A
ID=35A,
Static Drain to Source On-Resistance RDS(ON) 5.0 6.0 mΩ
VGS=10V

Input Capacitance Ciss 8400

VDS=10V
Output Capacitance Coss VGS=0V 1200 pF
f=1MHz
Reverse Transfer Capacitance Crss 930

ID=35A
Turn-On Delay Time td(on) 160
VDD=20V
Rise Time tr RG=22Ω 170
RGS=50Ω ns
Turn-Off Delay Time td(off) RL=0.57Ω 430
VGS=10V
Fall Time tf See Fig.3 185

ISD=50A
Source-Drain Diode Forward Voltage VSD 0.9 1.5 V
VGS=0V
ISD=25A
Source-Drain Diode Reverse Recovery Time trr 65 ns
ｄi/dt=50A/µs

Thermal Resistance Junction to Case Rth(ch-c) 1.25 °C/W

Thermal Resistance Junction to Ambient Rth(ch-a) 62.5 °C/W

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2
 http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Characteristic Curves (Tc=25°C)

ID-VDS characteristics (typical) ID-VGS characteristics (typical)
VDS=10V
100 100
10V 8V
6V

80 80

60 60
Tc = 150℃

ID (A)
ID (A)

25℃
40 40 -55℃

VGS =5V

20 20

0 0
0.0 0.5 1.0 1.5 0 2 4 6 8

VDS (V) VGS (V)

RDS(ON)-Tc characteristics (typical) RDS(ON)-ID characteristics (typical)

ID=35A
VGS=10V VGS=10V
12 7

10 6

5
8
RDS(ON) (mΩ )
RDS(ON) (mΩ )

4
6
3
4
2

2 1

0 0
-75 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100
Tc (℃) ID (A)

VDS-VGS characteristics (typical) Re(yfs)-ID characteristics (typical)

1.5 1000

-55℃
1.0 100 25℃
Tc = 150℃
Re(yf s) (S)
VDS (V)

0.5 ID=100A 10

ID=70A

ID=35A

0.0 1
1 10 100 1 10 100
VGS (V) ID (A)

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3
 http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Characteristic Curves (Tc=25°C)

Capacitance-VDS characteristics IDR-VSD characteristics (typical)
(typical) VGS=0V
f=1MHz VGS=0V
100000 100

80
Ciss
10000
Capacitance (pF)

60

IDR (A)
Tc = 150℃

40 25℃
1000 Coss -55℃

20
Crss

100 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4

VDS (V) VSD (V)

TRANSIENT THERMAL RESISTANCE - PULSE WIDTH Single Pulse

10

1
rth(ch-c) (℃/W)

0.1

0.01
0.0001 0.001 0.01 0.1 1 10
PW (sec)

PD-Ta characteristics (typical)

120

100
With infinite heatsink
80
PD (W)

60

40

20
Without iheatsink
0
0 50 100 150
Ta (℃)

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4
 http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Fig.1 Unclamped Inductive Test Method

1 V(BR)DSS
EAS= ･L･ILP2・
2 V(BR)DSS  VDD
L dv/dt 1
V(BR)DSS

IL
V DS
ILp
RG V DD
V GS IL VDD

0V

(ａ) Test Circuit (b) Waveforms

Fig.2 Diode Reverse Recovery Time Test Method

ISD

trr
di/dt
VDS

D.U.T L
ISD

IRM VDD
VDD

dv/dt 2
RG
V GS

0V VSD

(ａ) Test Circuit (b) Waveforms

Fig.3 Switching Time Test Method

90%
RL
VGS

ID 10%

VDS
90%

RG
VDD VDS
VGS
RGS 10%
0V
td(on) tr td(off) tf
P.W.=10μs
ton toff
Duty cycle≦1%

(ａ) Test Circuit (b) Waveforms

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5
 http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０ May. 2011

Outline
TO220S

(1) (2) (3)

(1) Gate
(2) Drain
(3) Source

Weight Approx. 1.4g

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6