Critical Current Mode Buck LED Driver IC

LC5910S Data Sheet

Description Not to scale
LC5910S is the buck single-output LED driver IC that
achieves the LED drive with few components, high Specification
efficiency, and high accuracy. The IC has various protections ● Recommended Supply Voltage: 12 V (min.) to 17 V
and configures various LED circuits. The PWM dimming and (max.)
the three-level dimming (the reference voltage selection ● Circuit Current at Standby: 100 μA (typ.)
function for LED current limiting) are available.
Application
Features
● LED Back Light
Converter Parts ● LED Lighting Equipment
● Critical Current Mode (CRM) Control (Low switching ● LED Bulbs
loss, low noise, reduction in the number of components)
● Enable Function
● Bottom Detection Voltage 100 mV (typ.)
LED Control Parts ● PWM
Dimming Function
● Reference Voltage Selection Function for LED Current
Limiting (three levels, 75% to 100%)
● Current Reference Accuracy: ±1%
Protections
● LED Output Short Circuit Protection: Pulse-by-pulse
● Current Detection Short Circuit Protection: Autorestart
● Input Voltage Drop Protection: Auto-restart
● Overvoltage Protection (OVP): Auto-restart, fault output
● Thermal Shutdown (TSD) with Hysteresis: Autorestart

Typical Application

Package
SOP8
 Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings ----------------------------------------------------------------------------- 3
2. Recommended Operating Range ----------------------------------------------------------------------- 3
3. Electrical Characteristics -------------------------------------------------------------------------------- 4 4. Block Diagram
--------------------------------------------------------------------------------------------- 5
5. Pin Configuration Definitions --------------------------------------------------------------------------- 5
6. Typical Applications -------------------------------------------------------------------------------------- 6
7. Physical Dimension --------------------------------------------------------------------------------------- 7
8. Marking Diagram ----------------------------------------------------------------------------------------- 8 9. Operational
Description --------------------------------------------------------------------------------- 9
9.1 Operation in Critical Current Mode (CRM)--------------------------------------------------- 9
9.2 Enable ------------------------------------------------------------------------------------------------- 9
9.3 Reference Voltage Select Function for LED Current Limit -------------------------------- 9
9.4 LED Current Setting ----------------------------------------------------------------------------- 10
9.5 Bottom Detection Function (Off-time Period Termination Detection)------------------ 10
9.6 Maximum On-time -------------------------------------------------------------------------------- 10
9.7 PWM Dimming ------------------------------------------------------------------------------------ 11
9.8 External Power MOSFET Gate Drive -------------------------------------------------------- 11
9.9 Overvoltage Protection (OVP) ------------------------------------------------------------------ 12
9.10 Fault Signal ----------------------------------------------------------------------------------------- 12
9.11 Thermal Shutdown (TSD) ----------------------------------------------------------------------- 12
10. Circuit Constant Setting ------------------------------------------------------------------------------- 13
10.1 Inductor Setting ----------------------------------------------------------------------------------- 13
10.2 Input Smoothing Electrolytic Capacitor, CIN, Setting -------------------------------------- 15
10.3 Output Smoothing Capacitor, COUT, Setting ------------------------------------------------- 15
10.4 Current Detection Resistor, RCS, Setting ----------------------------------------------------- 16
11. Design Notes ---------------------------------------------------------------------------------------------- 17
11.1 External Components ---------------------------------------------------------------------------- 17
11.1.1 Inductor --------------------------------------------------------------------------------------- 17
11.1.2 Input and Output Smoothing Electrolytic Capacitor -------------------------------- 17
11.1.3 Current Detection Resistor ----------------------------------------------------------------
17
11.1.4 Freewheeling Diode ------------------------------------------------------------------------- 17
11.1.5 External Power MOSFET ----------------------------------------------------------------- 17
11.2 PCB Trace Layout -------------------------------------------------------------------------------- 18
12. PCB Pattern Layout ------------------------------------------------------------------------------------ 19
13. Reference Design of Power Supply ------------------------------------------------------------------ 20
14. Design Flow Chart -------------------------------------------------------------------------------------- 21 Important Notes
---------------------------------------------------------------------------------------------- 22

1. Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); and current
coming out of the IC (sourcing) is negative current (−). Unless
specifically noted, TA = 25 °C.
Parameter Symbol Pins Rating Unit
CS Pin Voltage VCS 1−3 −0.3 to 18.0 V
VCC Pin Voltage VCC 2−3 −0.3 to 18.0 V
LC5910S

OUT Pin Voltage VOUT 4−3 −0.3 to 18.0 V

BD Pin Voltage VBD 5−3 −1.0 to 18.0 V
FAULT Pin Voltage VFAULT 6−3 −0.3 to 18.0 V
PWM Pin Voltage VPWM 7−3 −0.3 to 18.0 V
SEL Pin Voltage VSEL 8−3 −0.3 to 18.0 V
OUT Pin Sink/Source Current IOUT 4−3 −1.5 to 1.5 A
BD Pin Sink/Source Current IBD 5−3 −4.0 to 4.0 mA
Allowable Dissipation12 PD ― 1.2 W
Thermal Resistance between Junction θj- Pin
― 65 °C/W
and Lead (pin 3)
Thermal Resistance between Junction °C/W
θj-A ― 95
and Ambient (2)
Junction Temperature34 Tj ― 150 °C
Operating Ambient Temperature (1)
Top ― −40 to 125 °C
Storage Temperature Tstg ― −40 to 150 °C

3. Electrical Characteristics
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); and current coming out of
the IC (sourcing) is negative current (−). Unless specifically noted, TA = 25 °C, VCC = 12 V.
Parameter Symbol Conditions Pins Min. Typ. Max. Unit
Operation Start Voltage VCC(ON) 2−3 10.0 11.0 12.0 V
Operation Stop Voltage VCC(OFF) 2−3 9.0 10.0 11.0 V
Operation Start Stop Hysteresis VCC(HYS) 2−3 0.5 1.0 3.0 V
Circuit Current in Operation ICC(ON) 2−3 ― 1.1 1.8 mA
Circuit Current in Non-operation ICC(OFF) VPWM = 0 V 2−3 ― 100 170 μA
PWM Pin On Threshold Voltage VPWM(ON) 7−3 1.6 2.0 2.4 V
PWM Pin Off Threshold Voltage VPWM(OFF) 7−3 0.8 1.1 1.4 V
PWM Pin Sink Current IPWM VPWM = 3.3 V 7−3 0.50 1.25 3.00 μA

1 Limited by junction temperature.

2 The IC is mounted on the glass-epoxy board (40 × 40 mm) with copper area (25 × 25 mm).
3 The temperature of thermal shutdown operation is 150 °C (typ.).

4. Recommended Operating Range

The recommended operating range shows the operating conditions that are required for maintaining the normal circuit function
shown in the electrical characteristics. The IC should be used within the recommended operating range. Unless specifically noted,
TA = 25 °C.
Parameter Symbol Min. Typ. Max. Unit

Input Voltage Range VCC 12 ― 17 V

Operating Ambient Temperature TOP −40 85 °C

―
Range

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 VPWM = 3.3 V →
Standby Mode Switching Time tST_BY 7−3 20 36 57 ms
0V
PWM Disable VSEL Pin Voltage VSEL_DIS VPWM = 3.3 V 8−3 0 ― 0.4 V
CS Pin Reference Voltage 1 VCS1 1−3 742.5 750 757.5 mV
CS Pin Reference Voltage 2 VCS2 1−3 990 1000 1010 mV
CS Pin Reference Voltage 3 VCS3 1−3 1089 1100 1111 mV
CS Pin Overvoltage Protection 2.4 2.7 3.1 V
VCSOVP1 VPWM = 3.3 V 1−3
Threshold Voltage 1
CS Pin Overvoltage Protection 0.40 0.72 1.00 V
VCSOVP2 VPWM = 0 V 1−3
Threshold Voltage 2
CS Pin Blanking Time tLEB 1−3 320 ns
Overvoltage Protection Restart Time tRESTART 1−3 5.0 11.0 19.0 ms
Maximum On-time tONMAX VCS = 0 V 4−3 15.0 20.0 29.0 μs
BD Pin Detection Voltage VBD(L) 5−3 70 100 170 mV
BD Pin Detection Hysteresis Voltage VBD(HYS) 5−3 ― 100 ― mV
BD Pin Time Out Time 1 tBD(TOUT1) VCS = 1.5 V 5−3 15.0 20.0 29.0 μs
BD Pin Time Out Time 2 tBD(TOUT2) VCS = 0 V 5−3 300 570 900 μs
BD Pin Detection Mask Time tBDMSK 5−3 0.3 0.62 1.10 μs
OUT Pin On-resistance (High)* ROUT(HIGH) IOUT = 30 mA 4−3 ― 30 ― Ω
OUT Pin On-resistance (Low)* ROUT(LOW) IOUT = −30 mA 4−3 ― 15 ― Ω
FAULT Pin Output Resistance RFAULT 6−3 300 610 1000 Ω
Thermal Shutdown Operation — 150 °C
TSD ― ―
Temperature*
Thermal Shutdown Temperature — 33 °C
TSD(HYS) ― ―
Hysteresis*

* Ensured by design, not product tested.

4. Block Diagram

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LC5910S

Figure 4-1. LC5910S Block Diagram

5. Pin Configuration Definitions

CS 1 8 Pin
SEL Name Descriptions
1 CS Current Detection Signal Input.
VCC 2 7 PWM
Power supply voltage input (within the
GND 3 6 FAULT recommended operating range, 12 V to 17 V). A
2 VCC capacitor is connected between the VCC and
OUT 4 5 BD GND pins in order to supply stable power supply
voltage to the IC.
3 GND Ground
4 OUT Signal output for the gate drive of the power
MOSFET.
5 BD The resistor for adjusting the off-time is
connected.
Fault signal output.
This pin outputs the signal (the signal can be used
6 FAULT
for the setting to stop the pre converters such as
PFC.)
PWM dimming signal input.
7 PWM This pin inputs the PWM signal for dimming the
LED string.
Reference voltage select signal input.
This pin inputs the DC voltage signal to select the
8 SEL
internal reference voltage that controls the LED
current.

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6. Typical Applications

Figure 6-1. LC5910S Typical Application

7. Physical Dimension
● SOP8 Package

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LC5910S

NOTES:
- Dimensions in millimeters
- Bare lead frame: Pb-free (RoHS compliant)

● SOP8 Land Pattern Example

0.64

0.95

5.25

1.27
Dimensions in millimeters

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8. Marking Diagram

L 591
Part Number
C
S K0
Y MD
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
1 M is the month of the year (1 to 9, O, N or
D is a period of days,
D)
1: the first 10 days of the month (1st to 10th)
2: the second 10 days of the month (11th to 20th)
3: the last 10-11 days of the month (21st to 31st)
Control Number

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9. Operational Description than the PWM continuous current mode (CCM) which
switches hard. The CRM control requires no phase
All the characteristic values given in this section are typical
compensation and fewer components, resulting in the cost
values, unless they are specified as minimum or maximum.
reduction in system.
Current polarities are defined as follows: current going into
The oscillation frequency of the CRM control depends on
the IC (sinking) is positive current (+); and current coming
the input voltage.
out of the IC (sourcing) is negative current (−).

9.1 Operation in Critical Current I LED

Mode (CRM) 0
Figure 9-1 shows the LED drive circuit example using the
LC5910. S

0
Turn-off
D timming
V CS

0
tOFF tON

V DS
Turn-on
V BD(L) timming
0
t

Figure 9-2. CRM Control of the LC5910S

Figure 9-1. LED Drive Circuit Example using the
LC5910S

The IC uses the Critical Current Mode (CRM) control. To

9.2 Enable
drive the LED string, the IC controls the on-time and off-time
of the external power MOSFET as follows: The IC has the enable function. When the SEL pin voltage
decreases 0.4 V or lower, the OUT pin signal is fixed low. A
● On-time period: pull-down resistor is connected internally between the SEL
When the CS pin detects the peak of the external inductor and the GND pins.
current, IL, the on-time period is terminated..
● Off-time period:
When the BD pin detects decrease of the voltage, V DS,
between drain and source of the external power MOSFET,
9.3 Reference Voltage Select Function for
the off-time period is terminated. LED Current Limit
The LED current, ILED, is controlled using the peak value of
As a result, the waveform of the inductor current, I L,
the inductor current, IL. IL is converted into a voltage by the
becomes triangular as shown in Figure 9-2. The LED current,
current detection resistor, RCS, and input to the CS pin. The IC
ILED, is half of the peak value of the inductor current, IL.
controls the voltage to be equal to the reference voltage of the
The IC controls the peak value of the inductor current,
internal comparator, VCS. The reference voltage of the
IL, and stabilizes the LED current,ILED.
comparator can be set to three levels according to the DC
See Figure 4-1 and Figure 6-1 for circuit symbols.
voltage applied to the SEL pin (see Table 9-1). The function
The inductor current, IL, is converted into a voltage by the
enables altering the LED current with the resistance of the
current detection resistor, RCS, and input to the CS pin. When
current detection resistor, RCS, fixed.
the voltage becomes equal to the internal reference voltage,
If the different frequency switching noises of the other
VCS, the OUT pin output is turned off.
converter on PCB superimposes on the SEL pin, the RC filter
The off-time period is set by the VDS waveform that is input
shown in Figure 9-3 is required. The RC filter must be
to the BD pin (see Section 9.5). When the BD pin voltage
connected close to the SEL pin. Due to the delay caused by
decreases to the BD pin detection voltage, VBD(L), the off-
the combination of RSEL and CSEL, it takes time for the SEL pin
time period is terminated and the turn-on of the next cycle
voltage to settle at the determined V SEL after the DC voltage is
is started.
applied to the SEL pin. Be sure to confirm the actual
As described above, the IC always turns on at the V DS of the
operation and adjust the constants.
power MOSFET decreasing in the CRM control. Therefore,
the CRM control reduces the switching loss and noise more
 DS becomes zero, the VDS decreases due to the free oscillation
by the inductor, L, and the voltage resonance of parasitic
capacitance between drain and source, Cds. When the BD pin
voltage decreases to the BD pin detection voltage, VBD(L) = 100
Table 9-1. The Relation between SEL Pin Voltage and
mV, or lower, the function terminates the off-time period and
Internal Reference Voltage
turn on the power MOSFET.
Internal Reference Voltage,
SEL Pin Voltage, VSEL The BD pin detection mask time, tBDMASK = 0.62 μs (typ.),
VCS (typ.)
VSEL ≤ 0.40 V (Enable state) prevents misdetection due to surge and ringing waveform
immediately after the power MOSFET turns off.
0.75V ≤ VSEL ≤ 1.25 V VCS1 = 750 mV If the BD pin voltage maintains above VBD(L) during
1.75V ≤ VSEL ≤ 2.25 V VCS2 = 1000 mV ≥tBD(TOUT1) of 20 μs or more after the power MOSFET turns
off, the power MOSFET is forcibly turned on.
2.75V ≤ VSEL ≤ 3.25 V VCS3 = 1100 mV The standard constant for the BD pin is as follows:
LC5910S When VIN = 160 V and VLED = 130 V, CBD = 15 to 100 pF,
R SEL
RBD1 = 63 kΩ, and RBD2 = 2.2 kΩ.
8 If RBD1 decreases with fixing RBD2, the turn-on delay
SEL DC Voltage
increases.. CBDF, which is for noise countermeasure, should be
V SEL connected as needed. However, adding the
C SEL CBDF increases the turn-on delay.
Since the bottom detection voltage of VDS of the BD pin is
GND VBD(L) = 100 mV, it is strictly detected a little earlier than the
3 bottom point. (Depending on the constant of the BD pin
detection circuit, the turn-on is delayed and the bottom point
of VDS may be adjusted to approximately 0 V).
BD Time-out
Figure 9-3. RC filter of SEL Pin 20 µs / 600 µs
C BD
BD 8 R BD1
BD Blanking
OUT H →L
100 mV / Q1
200 mV
9.4 LED Current Setting
R BD2 C BDF
As shown in Figure 9-2, the LED current, ILED, is controlled LC5910S GND R CS
so that the peak of the inductor current, I L, at the power 3
MOSFET turn-on is equal to the reference voltage, VCS, set by
the SEL pin. When the power MOSFET turns off, the energy
stored in the inductor is regenerated through the freewheeling Figure 9-4. BD Pin Connection
diode, DS, and the power MOSFET turns on at the timing of
the end of energy regeneration. By repeating this, the
waveform of the IL becomes triangular with the current
determined by the RCS and the VCS at the top, and the I LED is 9.6 Maximum On-time
controlled to be half of the peak value of IL. The ILED is In case the current detection resistor, R CS, is shorted or the
calculated by the Equation (1). supply voltage, VIN, decreases, the OUT pin output signal of
the is kept in the logic high state; and the power MOSFET
VCS may be destroyed. To prevent this event, the OUT pin output
ILED = 0.5 × (1) RCS where: signal is limited by the maximum on-time.
When the on-time period exceeds the maximum ontime,
VCS is the reference voltage set by the SEL pin (see Section
tONMAX = 20 μs (typ.), the OUT pin output signal becomes
9.2), and
logic low, and outputs the logic high signal again in tBD(TOUT2) =
RCS is the resistance of the current detection resistor.
570 μs.

9.5 Bottom Detection Function (Off-time 9.7 PWM Dimming

Period Termination Detection)
The PWM pin is the input pin of the PWM dimming signal.
For the off-time period setting, the voltage between drain
The PWM dimming signal that satisfies the following
and source, VDS, is used. The VDS is input to the BD pin from
conditions is input to the PWM pin:
the drain pin through a coupling capacitor and a voltage
On threshold voltage, VPWM(ON) = 2 V, and
dividing resistor. Off threshold voltage, VPWM(OFF) = 1.1 V.
As shown in Figure 9-3, when the power MOSFET turns The voltage of 2.7 V to 3.3 V is recommended for the peak
off, the energy stored in the inductor is regenerated through
voltage of the PWM signal. The pull-down resistor is
the freewheeling diode, DS. When the current flowing in the
connected between the PWM and the GND pins.
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LC5910S

When the period during which the PWM pin voltage is RG1 is around 100 Ω, RG2 is around 10 Ω, and DG is a
lower than VPWM(OFF) is 36 ms or more, the LC5910S enters Schottky diode having the same breakdown voltage as the
standby mode. In standby mode, the current consumption of gate breakdown voltage of the external power MOSFET.
the IC is reduced. When the PWM pin voltage exceeds the Figure 9-7 shows a method of discharging with the
VPWM(ON), the IC recovers from the standby mode. transistor, QG at the power MOSFET turn-off. At turnon, the
In order to decrease the dv/dt of the PWM dimming signal, gate of the power MOSFET is charged via RG1, DG, and RG2
the RC filter circuit should be connected to the PWM pin as from the OUT pin. At turn-off, the bias voltage of Q G is the
shown in Figure 9-5. However, care should be taken when forward voltage, VF, of DG. Decreasing RG2 increases the
signals with high frequency are input. switching speed at turn-off. In order to prevent malfunction of
the IC due to the rapid dv/dt of the drain voltage of the power
LC5910S MOSFET, RGS is added between gate and ground of the power
MOSFET as needed. RGS is around 10 kΩ to 100 kΩ.
7 R PWM
PWM PWM signal

C PWM

GND
3 LC5910S

R G1 DG R G2
4
OUT Q1

QG
1
CS
GND R CS
R GS
3

Figure 9-5. RC filter of PWM Pin LC5910S

R G1

4
OUT Q1
9.8 External Power MOSFET Gate Drive R G2 DG
Figure 9-6 shows the peripheral circuit of the OUT pin. The
OUT pin is for driving the external power MOSFET gate. The 1
CS
peak output voltage of the OUT pin depends on the VCC pin
voltage. When the input voltage of the VCC pin is 17 V, the GND R CS
R GS
output voltage of the OUT pin is also around 17 V. Therefore, 3
it is required to choose the external power MOSFET having
the gate breakdown voltage of ±20 V or ±30 V, and choose
the power MOSFET such that the threshold voltage between
gate and source meets VGS(TH) < VOUT in all operating Figure 9-6. OUT Pin Peripheral Circuit (1)
temperature range.
In a general EMI noise countermeasure, the dv/dt of the Figure 9-7. OUT Pin Peripheral Circuit (2)
gate voltage of the power MOSFET is decreased to slow the 9.9 Overvoltage Protection (OVP)
switching speed. Note that, however, the switching loss
increases. The circuit resistance of the drive output When the inductance is saturated or shorted, the voltage
incorporated in the LC5910S is as follows: between both ends of the output current resistor, R CS,
30 Ω (typ.) for source, and 15 Ω (typ.) for sink. increases, resulting in the increase in the CS pin voltage.
The resistance above can not be changed. Therefore, the When the CS pin voltage meets either of the following
switching speed is adjusted by external components as shown conditions, the overvoltage protection (OVP) is activated.
in Figure 9-6 and Figure 9-7. ● The CS pin voltage is the overvoltage protection threshold
The components in Figure 9-6 of the gate drive circuit of voltage, VCSOVP1 = 2.7 V, or higher
the power MOSFET should be chosen as follows:

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● PWM pin voltage is in the logic low state, and the CS pin
voltage is the overvoltage protection threshold voltage,
VCSOVP2 = 0.72 V, or higher
When the OVP operates, the OUT pin voltage becomes
logic low level, and the fault signal is output from the FAULT
pin.
When the CS pin voltage decreases to be V CSOVP1, or
VCSOVP2, or lower, and the overvoltage protection restart time,
tRESTART = 11.0 ms, is exceeded, the fault signal output is
stopped and the LC5910S restarts (see Section 9.10 for the
detail of the fault signal).
Though the leading edge blanking (LEB) circuit is
incorporated in the CS pin, the RC filter should be added as
needed as shown in Figure 9-8 when large noises are
superimposed at the voltage signal between both ends of the
RCS.
The standard constant for RC filter is as follows:
The RCSF is around 1 kΩ, and the CCSF is around 220 pF.
If the RC time constant is large, the response delay
becomes large, and the operation may be unstable. Therefore,
be sure to confirm the actual operation and adjust the
constant.
LC5910S
R G1 Figure 9-9. FAULT Pin Peripheral Circuit
4
OUT Q1
R G2 DG
9.11 Thermal Shutdown (TSD)
1 R CSF When the junction temperature of the IC reaches the
CS thermal shutdown operation temperature, TSD = 150 °C, or
GND higher, the thermal shutdown (TSD) is activated and stops the
C CSF R GS R CS
3 oscillation. The TSD has the temperature hysteresis, T SD(HYS) =
30 °C. When the temperature of the IC decreases to be T SD −
TSD(HYS), or lower, the TSD automatically restarts the normal
operation.
Figure 9-8. RC Filter of CS Pin The TSD protects the IC when the loss of the IC increases
due to the instantaneous short-circuit of the OUT pin. This
does not guarantee the operation including the reliability in
the short-circuit state for long period or the state where the
9.10 Fault Signal
heat generation continues.
Figure 9-9 shows the peripheral circuit of the FAULT pin.
FAULT pin is connected to the source of the Pchannel
10. Circuit Constant Setting
MOSFET in the IC. When the overvoltage state is detected
(see Section 9.9), the internal P-channel MOSFET turns on,
and the FAULT pin voltage increases to the voltage of the 10.1 Inductor Setting
VCC pin. The on-time period depends on the input voltage, V IN, and
In normal operation, the FAULT pin is in the high inductance, and is determined by the point where the
impedance state. IC detects the peak value of inductor current, I L(PEAK). In the
The fault signal can be used for the protection operation to control of the IC, the off-time period is determined by the
suppress the power supply to the LED driver by sending point where the BD pin detects the VDS drop after the
signals via optocoupler to the primaryside off-line converter regenerative current flowing through the freewheeling diode,
IC or the PFC IC. DS, becomes zero. Therefore, the off time, tOFF, is the value
that the delay time, tONDLY, of the voltage resonant part is
added to the off time, tOFF_S (see Figure 10-1). tOFF_S is
determined by cycle length and on-time.
The design procedure of inductor is shown below.

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LC5910S

L
IL(PEAK)
I L(PEAK)
I LED
0 (6) Delay Time, tONDLY
T
The delay time, tONDLY, is calculated by the following
tOFF tON
equation.
tOFF_S
tONDLY
V DS tONDLY = π × √L × Cds (7)
V BD(L)

0 (7) Off-time, tOFF

t
I
The off time, tOFF, is the value that tONDLY, is added to tOFF_S
Figure 10-1. LC5910S Operational Waveform calculated by (19).

(1) Duty D
tOFF = tOFF_S + tONDLY (8)
Duty D is calculated by the following equation.

VLED (8) Corrected Frequency, fSW’

D= (2) The frequency, fSW’, considering the delay time, tONDLY, is
VIN calculated by the following equation.

(2) On-time, tON

When the switching period is T, the on time, tON, is as fSW′ = (9)
follows:
fSW’ is later than fSW that is set as a target operating
tON = T × D (3) frequency by the delay time, tONDLY. In order to adjust fSW’ to
the set value, the value of the inductor, L, should be decreased
and the on-time should be short. Even though the on-time is
(3) Off-time, tOFF_S adjusted, the peak inductor current, IL(PEAK), is always twice the
The off time, tOFF_S, until the regenerative current flowing ILED if VIN, VCS, and RCS are fixed.
through the freewheeling diode becomes zero is calculated by As shown in Equation (7), however, when L is reduced,
the following equation. tONDLY also becomes short. Therefore, the waveform should be
confirmed on actual operation and the constant of the BD pin
should be adjusted so that a sufficient delay time can be
tOFF_S = T − tON (4)
secured (the power MOSFET turns on at the bottom of VDS).
(4) Inductor
Based on the calculated L value, it is necessary to select an
The peak current of the inductor, I L(PEAK), is twice the LED inductor that does not magnetically saturate at the maximum
average current, ILED. The value of the inductor, L, such that current. The heat generation by the DCR of the winding
the peak current is IL(PEAK) is calculated by the following should be below the manufacturer guaranteed value.
equation.
● Calculation Example
VLED × tOFF_S The value of the inductor is calculated by the Equation (2)
L= (5) to (9) using the set value in Table 10-1.
IL(PEAK) where:
Table 10-1. Set Value of Inductance Calculation
tOFF_S is calculated by Equation (19), and VLED is the Parameter Set Value
voltage across the LED string. Input Voltage, VIN 160 V
(5) Current Detection Resistor, RCS LED String Voltage, VLED 130 V
The RCS value is calculated by the following equation. LED Average Current, ILED 350 mA
LED Current Detection 1000 mV
VCS Threshold Voltage, VCS
RCS = (6) Target Operating Frequency, 100 kHz
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fSW
81 pF fSW′ = = 95.11 kHz
Capacitance between Gate (Cds = Coss – Crss, for
and Drain, Cds Coss and Crss, refer to fSW’ is later than the target operating frequency, 100 kHz,
the data sheet of the by tONDLY. In order to adjust fSW’ to the set value, the value of
power MOSFET) the inductor, L, should be decreased and the on-time should
(1) Duty, D be short.
In the calculation example above, VCS2 = 1.0 V is assumed
to be 100%.
130 V
Table 10-2. shows the design values when the SEL pin
D= = 0.8125
voltage is switched using the inductor of the L value (330 µH)
160 V set in the calculation example and the current detection
resistor, RCS (the input voltage, VIN, is constant). In the
(2) On-time, tON application that the SEL pin voltage is changed, it is required
to choose the inductor that does not saturate at the maximum
By the equation, fSW = 100 kHz, the switching frequency, T,
current even in VCS3.
is 10 μs.

tON = 10 µs × 0.8125 = 8.125 μs Table 10-2. Calculation Result of Internal Reference

Voltage and Design Value when SEL Pin Voltage is
Switched
(3) Off-time, tOFF_S VCS1 = VCS2 = VCS3 =
Parameter 750 mV 1000 mV 1100 mV

tOFF_S = 10 µs − 8.125 µs = 1.875 µs IL(PEAK) 525 mA 700 mA 770 mA

ILED 262 mA 350 mA 385 mA
(4) Inductor tON 6.07 μs 8.13 μs 8.90 μs
By the equation, LED average current, I LED = 350 mA, the tOFF_S 1.40 μs 1.87 μs 2.05 μs
inductor peak current, IL(PEAK) is 700 mA.
tONDLY 0.514 μs 0.514 μs 0.514 μs

130 V × 1.875 μs T 7.98 μs 10.51 μs 11.46 μs

L= = 348.2 µH 700 mA fSW’ 125.25 kHz 95.11 kHz 87.23 kHz

From the calculated value, 330 µH should be chosen for the 10.2 Input Smoothing Electrolytic Capacitor,
inductor value.
(5) Current Detection Resistor, RCS
CIN, Setting
Since the IC provides the CRM control where the inductor
current fluctuates from zero to the peak, ripple current
1000 mV becomes larger than in case of CCM control.
RCS = = 1.428 Ω The ripple current of the input capacitor, C IN, is calculated
0.7 A assuming the worst condition (all the power is supplied to the
LED driver circuit from CIN for a period of time). In delay
(6) Delay time, tONDLY time, the negative current flows through CIN as shown in
Figure 10-2.

tONDLY = π × 330 µH × 81 pF = 0.514 µs

(7) Off-time, tOFF

tOFF = 1.875 µs + 0.514 µs = 2.389 μs

(8) Corrected Frequency, fSW’

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L
● Calculation Example
I L(PEAK)
The total ripple current, ICINR, of CIN, is calculated by
Equation (10), (11), and (12).
0

I CINR t1 t2 If t1 = 0.7 μs, IR(PEAK)2 = 0.26 A, and the cycle, T = 10 μs (the

I R(PEAK)1 frequency fSW = 100 kHz), ICINR−, is calculated as follows:
I CINR- I CINR+
0
I R(PEAK)2 0.7 µs
T
tOFF tON
ICINR− = 0.26 A × = 0.039 Arms
tOFF_S
3 × 10 µs
tONDLY
V DS
V BD(L) When t2 = 6.4 μs, IR(PEAK)1 = IL(PEAK) = 0.7 A, and the cycle, T
= 10 μs (frequency, fSW = 100 kHz), ICINR+ is calculated as
0 t follows:
I

Figure 10-2. CIN Ripple Current (worst condition) 6.4 µs

ICINR+ = 0.7 A × = 0.323 Arms
3 × 10 µs
The current flowing in CIN during the period, t1, in Figure
10-2 has a triangular waveform whose peak value is I R(PEAK)2.
The effective value of this current, I CINR−, is calculated by From the above, the total ripple current, ICINR, is as follows:
Equation (10).

ICINR = 0.0392 + 0.3232 = 0.325 Arms

t1
ICINR− = IR(PEAK)2 × (10)
3T From the above, a capacitor that can permit the ripple
current of 0.325 Arms or higher must be selected for CIN.
ICIN(RIPPLE) discharging from CIN during the period, t2, in
Figure 10-2 has a triangular waveform whose peak value is
IR(PEAK)1. The effective value of this current, ICINR+, is calculated 10.3 Output Smoothing Capacitor, COUT, Setting
by Equation (11). Since the IC provides the CRM control where the inductor
current fluctuates from zero to the peak, it is required to
connect the output smoothing capacitor, COUT, to the both ends
t2 (11) of the LED string, and reduce the ripple voltage of the LED
ICINR+ = IR(PEAK)1 × string.
3T The ripple current, ICOUTR, flowing in COUT, is calculated by
Equation (13).
From Equation (10) and (11), the total ripple current of C IN,
ICINR, is calculated by the following equation.
IL(PEAK)
ICOUTR (13)
ICINR = ICINR−2 + ICINR+2 (12)
When the equivalent series resistor of the smoothing
capacitor, COUT, is ESR, the ripple voltage, VLED(RIPPLE), of COUT
The calculated value is the maximum ripple current , is expressed by Equation (14).
considering the worst condition. A capacitor that the ripple
current calculated by Equation (12) can flow should be
chosen. Care should be taken in using an electrolytic VLED(RIPPLE) = IL(PEAK) × ESR (14)
capacitor.The ripple current eventually should be
confirmed on actual operation. A capacitor that the ripple current calculated by Equation
It is required to select input capacitors having sufficient (13) can flow is required for C OUT. The voltage across COUT is
margins to the maximum applied voltage according to the sum of VF in the LED string. It is required to select the
recommended use conditions of capacitor manufacturers. breakdown voltage of COUT having margins to the maximum
applied voltage considering the ripple voltage in Equation
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(14) according to recommended use conditions of capacitor IRCS = ILED × D (15) where,
manufacturers.

L
I L(PEAK) ILED is LED current, and
D is duty
0

I COUTR The average loss of RCS, PRCS, in Equation (15), is

I L(PEAK) calculated by the following equation.

0 PRCS = (IRCS)2 × RCS (16)

T
tOFF tON
When VCS is switched by the SEL pin input voltage, the
tOFF_S power dissipation should be calculated with the maximum
tONDLY
V DS value, VCS3 = 1.1 V.
V BD(L) In an abnormal operation state such as a short between the
drain and source pins of the external MOSFET , the detection
0 t resistor, RCS, may be damaged. In order to avoid damage, the
I following measures should be taken.
Figure 10-3. COUT Ripple Current - Increase the RCS power rating.
- Insert the protective fuse that melts before RCS is damaged
into the power supply of the LED driver circuit.
● Calculation Example - Using the FAULT pin of the LC5910S, stop the
If IL(PEAK) = 0.7 A, the ripple current, ICOUTR, flowing in COUT preconverter that generates the supply power of the LED
is calculated by Equation (13) as follows: driver circuit.

0.7 A
● Calculation Example
ICOUTR 0.202 Arms
Table 10-3. Set Value of Current Detection Resistance
From the above, a capacitor that can permit the ripple Calculation
current of 0.202 Arms or higher should be selected for Parameter Set Value
COUT. Detection Resistor, RCS 1.428 Ω
When ESR = 100 mΩ and IL(PEAK) = 0.7 A, the ripple 1.0 V
voltage, VLED(RIPPLE) , of COUT is calculated by Equation (14) as Reference Voltage, VCS
(VSEL = 0.75 V to 1.25 V)
follows:
LED Current, ILED 0.35 A (IL(PEAK) = 0.7 A)
LED String Voltage, 130 V
VLED(RIPPLE) = 0.7 A × 100 mΩ = 70 mVp– p VLED
Input Voltage, VIN 160 V
It is required to select the withstand voltage of C OUT having Duty, D 0.8125
margins to the maximum applied voltage considering the
ripple voltage of 70 mVp-p according to recommended use
Using the set value in Table 10-3., the loss of resistance is
conditions of capacitor manufacturers.
calculated by Equation (15) and Equation (16).
10.4 Current Detection Resistor, RCS, Setting
For the current detection resistor, R CS, noninductive IRCS = 0.35 A × 0.8125 = 0.284 A
resistors such as metal plate resistors, metal film resistors, and
carbon film resistors should be used. If inductive resistors
such as winding wire type are used, malfunction may occur
due to the surge voltage by parasitic inductance component. PRCS = (0.284 A)2 × 1.428 Ω = 0.115 W
Axial lead and radial lead resistor should be mounted with
the lead as short as possible.

● RCS Loss Calculation

The switching current flows in RCS in the on-time period of
the power MOSFET. The current flowing in RCS, IRCS, is
calculated by the following equation.

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LC5910S

11. Design Notes ● Capacitance between Drain and Source (Cds)

The capacitance between drain and source (Cds) affects the
delay time, tONDLY. tONDLY becomes longer as the capacitance
11.1 External Components becomes larger (see Section 10.1).
Although Cds is not described in the data sheet of the
Components fit for the use condition should be used.
power MOSFET, it can be calculated from the output
capacitance, Coss, and the feedback capacitance, Crss, as
follows:
11.1.1 Inductor
It is required to set design margin properly for temperature Coss = Cds − Cgd (17)
rise due to copper loss and iron loss, and for magnetic
saturation.
Crss = Cgd (18)
where, Cgd is the capacitance between gate and drain,
11.1.2 Input and Output Smoothing Electrolytic
From Equation (17) and (18), Cds is calculated by the
Capacitor
following equation.
It is required to set a design margin properly for the ripple
current, voltage, and lifetime. The electrolytic capacitor used
Cds = Coss − Crss (19)
must have high allowable ripple current for switching power
● Breakdown Voltage between Gate and Source
supplies and low impedance.
The gate drive voltage of the LC5910S varies in proportion
to the VCC pin voltage. Therefore, in the specification that
VCC voltage rises to the upper limit of 17 V of the
11.1.3 Current Detection Resistor recommended operating range, a power MOSFET with gate-
Because high-frequency switching current flows through source breakdown voltage of 20 V to 30 V should be selected.
the current detection resistor, a resistor with low internal When a stabilized voltage of 12 V is input to the VCC pin,
inductance must be chosen. In addition, the resistor is required the crest value in the output pulse of the OUT pin is about 12
to be selected considering the allowable loss. V.

● Others
11.1.4 Freewheeling Diode In general, the larger the package and the lower the on-
resistance of a power MOSFET, the larger the capacitance
The freewheeling diode, DS, that regenerates energy during (e.g. Ciss) between junctions. Therefore, the larger drive
the off-time period of the external power MOSFET (see current is required. Considering the drive capability of the
Figure 6-1) is selected from fast recovery diodes with short LC5910S, a power MOSFET with package size smaller than
recovery time, trr, or from Schottky diodes. TO 220 is recommend.
The peak of the forward current, IF, of the freewheeling
diode is twice the ILED, and flows in the tOFF period of the
power MOSFET. IF flows repeatedly at the same switching
frequency as the power MOSFET. Therefore, a diode should 11.2 PCB Trace Layout
be selected considering the allowable loss. The switching power supply circuit includes high frequency
Do not use a general rectification diode used for and high voltage current paths that affect the IC operation,
commercial power supply rectification because its t rr is long noise interference, and power dissipation. Therefore, PCB
and a large short-circuit current flows during the recovery trace layouts and component placements play an important
period. This short-circuit current may cause not only the heat role in circuit designing. High frequency and high voltage
generation of the diode but also malfunction of the main current loops must be as small as possible with wide trace, in
circuit, resulting in damage. order to maintain a low-impedance state (see Figure 11-1).
In addition, ground traces should be as wide and short as
possible so that radiated EMI levels can be reduced.
11.1.5 External Power MOSFET When the input/output conditions exceed the Safety Extra
Low Voltage (SELV), component layout and pattern distance
● Breakdown Voltage between Drain and Source considering safety standards are required.
The input voltage, VIN － VF (the forward voltage of the
freewheeling diode) is applied between the drain and source
of the power MOSFET when it is off. Considering surges at
turn-off, the power MOSFET whose drain-source breakdown
voltage is more than twice VIN should be selected.
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 (4) Peripheral Components of the IC
The components connected to each pin must be placed as
close as possible to the IC, and must be connected as short
as possible. The ground of components for detection of
the IC must be connected near the GND pin. Extra
attention should be paid so that the IC ground does not
become a common impedance with the main trace. Do not
place the IC or small signal pattern just under the
inductor, L. The IC may malfunction due to the leak
magnetic flux.
(5) Output Smoothing Capacitor, COUT The output smoothing
capacitor, COUT is placed close to the LED string with a
minimum length of traces.
C IN DS C OUT (6) Thermal Considerations
Because the power MOSFET has a positive thermal
coefficient of RDS(ON), care should be taken for thermal
Q1 design. Particularly in the case of surface mount
components, the drain pin pattern functions as a heat sink.
Therefore, the pattern must be designed as wide as
Figure 11-1. High Frequency Loop (shaded area) possible.
(1) Main Circuit Trace Layout
The high frequency loop as shown in Figure 11-1 and the
loop including the VCC pin and the GND pin are the main
trace flowing switching currents.
This traces must be as wide layout and small loop as
possible.
(2) Around the GND Pin
In order to prevent the switching current of the main
circuit from influencing the control circuit, the control
ground must be separated form the main trace and be
connected near the GND pin.
(3) RCS Trace Layout
RCS should be placed as close as possible to the CS pin. In
order to reduce noise at current detection, the detection
trace must be separated, and be connected to near R CS
from the CS pin.

12. PCB Pattern Layout

Front Side Back Side

Figure 12-1. Pattern Layout Example

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LC5910S

*Since this is the evaluation board, components for adjustment are included. Figure 12-2.

Pattern Layout Circuit Diagram

13. Reference Design of Power Supply

As an example, the followings show the power supply specification and the bill of materials. For the circuit diagram of the bill
of materials, see Figure 12-2.

● Power Supply Specification

Input Voltage DC250 V
VCC Pin Voltage 13 V
Output Voltage DC200 V
LED Current 0.478 A (VSEL = 1.0V)
● Bill of Material
Symbol Part Type Rating Notes
L01* Inductor 0.47 mH
C1 Ceramic 1 nF
C2 Ceramic 100 pF
C3 Ceramic Open
C4 Ceramic 15 pF, 1 kV
C5 Ceramic 0.47 μF
C6* Ceramic 100 pF, 50 V
C7 Ceramic Open
C8 Ceramic 0.47 μF, 400 V
C9 Electrolytic 22 μF, 25 V
C10 Electrolytic 10 μF, 250 V
D01 Fast Recovery Diode 600 V, 2 A
D02 Diode 60 V, 0.5 A
Q1 N-channel Power MOSFET 250 V, 7.5A, 0.4Ω
Q2 PNP Transistor −60 V, −0.6 A
Q3 NPN Transistor 40 V, 0.6 A
R0 General 1.8 kΩ
R1 General Open
R2 General 2.2 kΩ
R3 General 33 kΩ
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 R4 General 30 kΩ
R5 General Open
R6 General 470 kΩ
R7 General 470 kΩ
R8 General 1 kΩ
R9 General 510 kΩ
R10 General 10 Ω
R11* General 7.5 Ω
R12* General 47 Ω
R13* General 10 kΩ
R14* General 100 Ω
R15 General 1 Ω, 2 W
R16 General 2.3 Ω, 2 W
R17 General Open
R18 General Open
R19 General 4.7 kΩ
LED — — LED for Fault detection
* Adjustment is required on actual operation.
14. Design Flow Chart
The flow chart below is specialized for selection of constants. Measures against noise and heat dissipation on actual operation
are not included. Therefore, another adjustment is required.

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LC5910S

START

V SEL Setting
V LED = V F × n
V IN
I LED
Condition Setting R CS Setting

Target Frequency Setting C IN Setting

C OUT Setting
Calculation of Duty, D

Peripheral Components
Selection such as
tON 、tOFF_S Calculation Free Wheeling
Diode

Actual Operation
tON ≤ 20μs Confirmation

R BD , C BD Adjustment
Inductance
Calculation

Check the bottom-on

Power MOSFET of the BD pin wave
Selection -form

Delay Time, t ONDLY END

Calculation

tOFF Calculation
Corrected Frequency
Calculation

Important Notes
● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the “Sanken
Products”) are current as of the date this document is issued. All contents in this document are subject to any change without notice due to
improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this
document reflect the latest revisions before use.

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● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature,

or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the
Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal
control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to
discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products
and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that
require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose
failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant
laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages
and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or
in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically, chemically or
otherwise processing or treating the same, you must duly consider all possible risks that may result from all such uses in advance and proceed
therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of
any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including
using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due
consideration of a failure occurrence rate or derating, etc., in order not to cause any human injury or death, fire accident or social harm which
may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official
website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● No contents in this document can be transcribed or copied without Sanken’s prior written consent.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the
Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or
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● All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference of use of the
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● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations
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strict compliance with such applicable laws and regulations.
● You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including but not
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● All rights and title in and to any specific trademark or tradename belong to Sanken or such original right holder(s).

DSGN-CEZ-16002

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