FDH44N50

August 2002

FDH44N50
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET
Applications Features
Switch Mode Power Supplies(SMPS), such as • Low Gate Charge Qg results in Simple Drive
Requirement
• PFC Boost
• Two-Switch Forward Converter • Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Single Switch Forward Converter
• Flyback Converter • Reduced rDS(ON)

• Buck Converter • Reduced Miller Capacitance and Low Input Capacitance

• High Speed Switching • Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

Package Symbol
JEDEC TO-247

SOURCE D
DRAIN
GATE
G
DRAIN
(FLANGE)
S

Absolute Maximum Ratings TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 500 V
VGS Gate to Source Voltage ±30 V
Drain Current
Continuous (TC = 25oC, VGS = 10V) 44 A
ID
Continuous (TC = 100oC, VGS = 10V) 32 A
Pulsed1 176 A
Power dissipation 750 W
PD
Derate above 25oC 5 W/oC
TJ, TSTG Operating and Storage Temperature -55 to 175 oC

Soldering Temperature for 10 seconds 300 (1.6mm from case) oC

Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

Thermal Characteristics
o
RθJC Thermal Resistance Junction to Case 0.2 C/W
o
RθCS Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 C/W
RθJA Thermal Resistance Junction to Ambient 40 oC/W

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

 FDH44N50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH44N50 FDH44N50 TO-247 - - 30

Electrical Characteristics TJ = 25°C (unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Units

Statics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V
Reference to 25oC,
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient - 0.61 - V/°C
ID = 1mA
rDS(ON) Drain to Source On-Resistance VGS = 10V, ID = 22A - 0.11 0.12 Ω
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3.15 4 V
VDS = 500V TC = 25oC - - 25
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Dynamics
gfs Forward Transconductance VDS = 50V, ID = 22A 11 - - S
Qg(TOT) Total Gate Charge at 10V VGS = 10V, - 90 108 nC
Qgs Gate to Source Gate Charge VDS = 400V, - 24 29 nC
Qgd Gate to Drain “Miller” Charge ID = 44A - 31 37 nC
td(ON) Turn-On Delay Time VDD = 250V, - 16 - ns
tr Rise Time ID = 44A, - 84 - ns
td(OFF) Turn-Off Delay Time RG = 2.15Ω, - 45 - ns
tf Fall Time RD = 5.68Ω - 79 - ns
CISS Input Capacitance - 5335 - pF
VDS = 25V, VGS = 0V,
COSS Output Capacitance - 645 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 40 - pF

Avalanche Characteristics
EAS Single Pulse Avalanche Energy2 1500 - - mJ
IAR Avalanche Current - - 44 A

Drain-Source Diode Characteristics

Continuous Source Current MOSFET symbol D
IS - - 44 A
(Body Diode) showing the
1 integral reverse G
Pulsed Source Current
ISM - - 176 A
(Body Diode) p-n junction diode. S

VSD Source to Drain Diode Voltage ISD = 44A - 0.900 1.2 V

trr Reverse Recovery Time ISD = 44A, dISD/dt = 100A/µs - 920 1100 ns
QRR Reverse Recovered Charge ISD = 44A, dISD/dt = 100A/µs - 14 18 µC
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 1.61mH, IAS = 44

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

 FDH44N50
Typical Characteristic

500 200
TJ = 25oC TJ = 175oC

ID, DRAIN TO SOURCE CURRENT (A)

ID, DRAIN TO SOURCE CURRENT (A)

VGS DESCENDING VGS DESCENDING

100
10V 10V
8V 6.5V
100
6V 6V
5.5V 5.5V
5V
5V
4.5V
4.5V
10 4V
10

PULSE DURATION = 80µs PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
1 1
1 10 100 1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. Output Characteristics Figure 2. Output Characteristics

NORMALIZED DRAIN to SOURCE ON RESISTANCE

160 3
PULSE DURATION = 80µs PULSE DURATION = 80µs
140 DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VDD = 80V
ID, DRAIN CURRENT (A)

120
2
100

80

60
TJ = 175oC TJ = 25oC 1
40

20 VGS = 10V, ID = 22A

0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -50 -25 0 25 50 75 100 125 150 175

VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On

Resistance vs Junction Temperatrue

10000 16
VGS, GATE to SOURCE VOLTAGE (V)

ID = 44A 100V
CISS
250V
C, CAPACITANCE (pF)

12
1000
400V
COSS
8

100
4

CRSS
VGS = 0V, f = 1MHz
10 0
1 10 100 0 25 50 75 100 125 150

VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC)

Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant
Gate Current

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

 FDH44N50
Typical Characteristic (Continued)

80 200
ISD , SOURCE TO DRAIN CURRENT (A)

70 100

ID, DRAIN CURRENT (A)

60
100µs
50

40 OPERATION IN THIS AREA

TJ = 175oC TJ = 25oC 10 LIMITED BY RDS(ON)
30
1ms

20
10ms
10
DC
TC = 25oC
0 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 10 100 1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

VSD , SOURCE TO DRAIN VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body Figure 8. Maximum Safe Operating Area
Diode Current

50

40
ID, DRAIN CURRENT (A)

30

20

10

0
25 50 75 100 125 150 175

TC, CASE TEMPERATURE (°C)

Figure 9. Maximum Drain Current vs Case Temperature

ZθJC, NORMALIZED THERMAL RESPONSE

DUTY CYCLE DESENDING ORDER

0.5
1 0.2
0.1
0.05
0.02
0.01

0.1 t1

PD

t2

DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.01
10-5 10-4 10-3 10-2 10-1 100

t1, RECTANGULAR PULSE DURATION (S)

Figure 10. Normalized Transient Thermal Impedance, Junction to Case

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

 FDH44N50
Test Circuits and Waveforms

VDS BVDSS

tP
VDS
L
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS 0
0.01Ω
tAV

Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms

VDS
VDD Qg(TOT)
RL
VDS
VGS = 10V

VGS +

VDD VGS
-

DUT VGS = 1V

Ig(REF) 0
Qg(TH)
Qgs Qgd

Ig(REF)
0

Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms

VDS tON tOFF

td(ON) td(OFF)

RL tr tf
VDS
90% 90%

+
VGS
VDD 10% 10%
- 0

DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0

Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform

©2002 Fairchild Semiconductor Corporation FDH44N50 Rev. A4, August 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™
ActiveArray™ FACT Quiet Series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FASTâ LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrenchâ SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOSTM HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSignaTM I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFETâ
The Power Franchise™ OPTOLOGICâ SILENT SWITCHERâ VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1