The document describes SMD general purpose NPN transistors BC846, BC847, and BC848.
1. The transistors feature NPN silicon epitaxial planar transistors in SOT-23 plastic packages for switching and amplifier applications.
2. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, collector current, power dissipation, and junction temperature.
3. Electrical characteristics are provided for collector-base cut-off current, current gain, saturation voltages, on voltage, gain-bandwidth product, output capacitance, and noise figure.
The document describes SMD general purpose NPN transistors BC846, BC847, and BC848.
1. The transistors feature NPN silicon epitaxial planar transistors in SOT-23 plastic packages for switching and amplifier applications.
2. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, collector current, power dissipation, and junction temperature.
3. Electrical characteristics are provided for collector-base cut-off current, current gain, saturation voltages, on voltage, gain-bandwidth product, output capacitance, and noise figure.
The document describes SMD general purpose NPN transistors BC846, BC847, and BC848.
1. The transistors feature NPN silicon epitaxial planar transistors in SOT-23 plastic packages for switching and amplifier applications.
2. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, collector current, power dissipation, and junction temperature.
3. Electrical characteristics are provided for collector-base cut-off current, current gain, saturation voltages, on voltage, gain-bandwidth product, output capacitance, and noise figure.
The document describes SMD general purpose NPN transistors BC846, BC847, and BC848.
1. The transistors feature NPN silicon epitaxial planar transistors in SOT-23 plastic packages for switching and amplifier applications.
2. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, collector current, power dissipation, and junction temperature.
3. Electrical characteristics are provided for collector-base cut-off current, current gain, saturation voltages, on voltage, gain-bandwidth product, output capacitance, and noise figure.
- - 15 nA VCB=30V, IE=0 ICBO Collector-Base Cut-off Current VCB=30V, IE=0, - - 5.0 A TJ=150C BC846/7/8, Suffix A - 90 -
BC846/7/8, Suffix B - 150 - VCE=5V, IC=10A
BC847/8, Suffix C - 270 -
hFE D.C. Current Gain BC846/7/8, Suffix A 110 180 220
BC846/7/8, Suffix B 200 290 450 VCE=5V, IC=2mA
BC847/8, Suffix C 420 520 800
- - 0.25 IC=10mA, IB=0.5mA
VCE(sat) Collector-Emitter Saturation Voltage V - - 0.6 IC=100mA, IB=5mA
- 0.7 - IC=10mA, IB=0.5mA
VBE(sat) Base-Emitter Saturation Voltage V - 0.9 - IC=100mA, IB=5mA
0.58 0.66 0.7 VCE=5V, IC=2mA
VBE(on) Base-Emitter On Voltage V - - 0.77 VCE=5V, IC=10mA VCE=5V, IC=10mA, fT Current Gain-Bandwidth Product 100 - - MHz f=100MHz VCB=10V, IE=0, Cob Collector Output Capacitance - - 4.5 pF f=1MHz VCE=5V, IC=0.2mA, NF Noise Figure - - 10 dB RG=2K, f=1KHz
Rev. B/CH www.taitroncomponents.com Page 2 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848 Typical Characteristics Curves 1. BC846A, BC847A, BC848A Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain vs. Collector Current Collector Cut-off Current (nA)
DC Current Gain
Junction Temperature (C) Collector Current (mA)
Fig.3-Base-Emitter On Voltage Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current Collector-Emitter Saturation Voltage (mV) Base-Emitter On Voltage (mV)
Collector Current (mA) Collector Current (mA)
Rev. B/CH www.taitroncomponents.com Page 3 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
Fig.5- Base-Emitter Saturation Voltage
vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Base-Emitter Saturation Voltage (mV)
Capacitance (pF)
Collector Current (mA)
Reverse Voltage (V)
2. BC846B, BC847B, BC848B
Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain vs. Collector Current Collector Cut-off Current (nA)
DC Current Gain
Junction Temperature (C) Collector Current (mA)
Rev. B/CH www.taitroncomponents.com Page 4 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
Fig.3-Base-Emitter On Voltage Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current
Collector-Emitter Saturation Voltage (mV)
Base-Emitter On Voltage (mV)
Collector Current (mA) Collector Current (mA)
Fig.5- Base-Emitter Saturation Voltage
vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Base-Emitter Saturation Voltage (mV)
Capacitance (pF)
Collector Current (mA) Reverse Voltage (V)
Rev. B/CH www.taitroncomponents.com Page 5 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848 3. BC847C, BC848C Fig.1-Collector Cut-off Current vs. Junction Temperature Fig.2- DC Current Gain vs. Collector Current Collector Cut-off Current (nA)
DC Current Gain
Junction Temperature (C) Collector Current (mA)
Fig.3-Base-Emitter On Voltage Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current Collector-Emitter Saturation Voltage (mV) Base-Emitter On Voltage (mV)
Collector Current (mA) v
Collector Current (mA)
Rev. B/CH www.taitroncomponents.com Page 6 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848 Fig.5- Base-Emitter Saturation Voltage vs. Collector Current Fig.6- Typical Capacitances vs. Reverse Voltage Base-Emitter Saturation Voltage (mV)
Capacitance (pF)
Collector Current (mA)
Reverse Voltage (V)
Dimensions in mm
SOT-23
Rev. B/CH www.taitroncomponents.com Page 7 of 8 SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
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