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    Datasheet

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    arquimidesval
    This document provides specifications for the STD13007F NPN silicon power transistor. It lists the transistor's key features as high-speed switching and a high collector voltage of 700V, making it suitable for switching regulator and motor control applications. The document provides information on ordering, outlines dimensions, maximum ratings, electrical characteristics, and characteristic curves. It also notes that these transistors are intended for general electronic equipment and consultation is required before use in applications with safety or welfare implications.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet

    Uploaded by

    arquimidesval
    28 views5 pages
    This document provides specifications for the STD13007F NPN silicon power transistor. It lists the transistor's key features as high-speed switching and a high collector voltage of 700V, making it suitable for switching regulator and motor control applications. The document provides information on ordering, outlines dimensions, maximum ratings, electrical characteristics, and characteristic curves. It also notes that these transistors are intended for general electronic equipment and consultation is required before use in applications with safety or welfare implications.

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    This document provides specifications for the STD13007F NPN silicon power transistor. It lists the transistor's key features as high-speed switching and a high collector voltage of 700V, making it suitable for switching regulator and motor control applications. The document provides information on ordering, outlines dimensions, maximum ratings, electrical characteristics, and characteristic curves. It also notes that these transistors are intended for general electronic equipment and consultation is required before use in applications with safety or welfare implications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views5 pages

    Datasheet

    Uploaded by

    arquimidesval
    This document provides specifications for the STD13007F NPN silicon power transistor. It lists the transistor's key features as high-speed switching and a high collector voltage of 700V, making it suitable for switching regulator and motor control applications. The document provides information on ordering, outlines dimensions, maximum ratings, electrical characteristics, and characteristic curves. It also notes that these transistors are intended for general electronic equipment and consultation is required before use in applications with safety or welfare implications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    Semiconductor

    www.DataSheet4U.com
    STD13007F
    NPN Silicon Power Transistor

    Features
    • High speed switching
    • High Collector Voltage : VCBO = 700V
    • Suitable for Switching Regulator and Motor Control

    Ordering Information
    Type NO. Marking Package Code

    STD13007F STD13007 TO-220F

    Outline Dimensions unit : mm

    PIN Connections
    1. Base
    2. Collector
    3. Emitter

    KST-H035-000 1
    STD13007F
    Absolute maximum ratings
    www.DataSheet4U.com (Ta=25°C)
    Characteristic Symbol Rating Unit
    Collector-Base voltage VCBO 700 V
    Collector-Emitter voltage VCEO 400 V
    Emitter-base voltage VEBO 9 V
    Collector current (DC) IC 8 A
    Collector current (Pulse) ICM 16 A
    Base current (DC) IB 4 A
    Collector Power dissipation (Tc=25℃) PC 40 W
    Junction temperature Tj 150 °C
    Storage temperature Tstg -55~150 °C

    Electrical Characteristics (Ta=25°C)


    Characteristic Symbol Test Condition Min. Typ. Max. Unit
    Collector-Emitter sustaining voltage BVCEO(sus) IC=10mA, IB=0 400 - - V

    Emitter cut-off current IEBO VEB=9V, IC=0 - - 1 mA

    IC=2A, VCE=5V 8 - 60
    DC Current gain hFE*
    IC=5A, VCE=5V 5 - 30
    IC=2A, IB=0.4A - - 1
    Collector-Emitter saturation voltage VCE(sat)* IC=5A, IB=1A - - 2 V
    IC=8A, IB=2A - - 3

    IC=2A, IB=0.4A - - 1.2


    Base-Emitter saturation voltage VBE(sat)* V
    IC=5A, IB=1A - - 1.6

    Transition frequency fT VCE=10V, IC=0.5A, f=1MHz - 14 - MHz

    Output capacitance Cob VCB=10V, IE=0, f=0.1MHz - 80 - ㎊

    Turn on Time ton - - 1.6


    VCC=125V, IC=5A
    Storage Time tstg - - 3 ㎲
    IB1=-IB2=1A
    Fall Time tf - - 0.7

    * Pulse test: PW≤300 ㎲, Duty cycle≤2%.

    KST-H035-000 2
    STD13007F
    Electrical Characteristic Curves
    www.DataSheet4U.com

    Fig. 1 PC - TC Fig. 2 VBE(sat) , VCE(sat) - IC

    Fig. 3 hFE-IC Fig. 4 tf , tstg - IC

    Fig. 5 td , tr - IC Fig. 6 Cob - VCB

    KST-H035-000 3
    STD13007F
    Fig. 7 Safe Operating Area
    www.DataSheet4U.com

    KST-H035-000 4
    STD13007F
    www.DataSheet4U.com

    These AUK products are intended for usage in general electronic equipments(Office and

    communication equipment, measuring equipment, domestic electrification, etc.).

    Please make sure that you consult with us before you use these AUK products in equipm-

    ents which require high quality and/or reliability, and in equipments which could have

    major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic

    signal, combustion central, all types of safety device, etc.).

    AUK cannot accept liability to any damage which may occur in case these AUK products

    were used in the mentioned equipments without prior consurtation with AUK.

    KST-H035-000 5

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