BC807/BC808

BC807/BC808

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages 3
• Complement to BC817/BC818

1 SOT-23
1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC807 -50 V
: BC808 -30 V
VCEO Collector-Emitter Voltage
: BC807 -45 V
: BC808 -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -800 mA
PC Collector Power Dissipation -310 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
: BC807 -45 V
: BC808 -25 V
BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0
: BC807 -50 V
: BC808 -30 V
BVEBO Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V
ICES Collector Cut-off Current VCE= -25V, VBE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 630
hFE2 VCE= -1V, IC= -300mA 60
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA 100 MHz
f=50MHz
Cob Output Capacitance VCB= -10V, f=1MHz 12 pF

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC807/BC808
hFE Classification
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-

Marking Code
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking 9FA 9FB 9FC 9GA 9GB 9GC

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC807/BC808
Typical Characteristics

-500 -20
µA
- 80
IB= µA
- 70
mA I =
IC[mA], COLLECTOR CURRENT

- 5.0 A

IC[mA], COLLECTOR CURRENT

I B = - 4.5m
B
µA P
-400 -16 - 60 T =6
I B = 4.0mA IB= 00
mW
- A
I B = - 3.5m A µA
I B = - 3.0m A - 50
I B = - 2.5m IB=
-300 IB = mA -12 µA
- 2.0 - 40
IB =
A IB=
1.5m
IB = -
30µA
-200 -8
IB = -
IB = - 1.0mA PT = 60
0mW
µA
IB = - 20
IB = - 0.5mA
-100
-4

IB = - 10µA
IB = 0
-0 IB = 0
-0 -1 -2 -3 -4 -5 -0
-0 -10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Static Characteristic

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 -10
PULSE
IC = 10 IB
PULSE
VCE = - 2.0V
hFE, DC CURRENT GAIN

V CE(sat)
100 -1

- 1.0V

10 -0.1

V BE(sat)

1 -0.01
-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-1000 100

VCE = -1V f = 1.0MHz

IC[mA], COLLECTOR CURRENT

PULSE
Cib, Cob[pF], CAPACITANCE

-100 Cib

Cob
-10 10

-1

-0.1 1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -0.1 -1 -10 -100

VCB[V], COLLECTOR-BASE VOLTAGE

VBE[V], BASE-EMITTER VOLTAGE VEB[V], EMITTER-BASE VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC807/BC808
Typical Characteristics (Continued)

1000

VCE = -5.0V
fT[MHz], GAIN BANDWIDTH PRODUCT

100

10
-1 -10 -100

IC[mA], COLLECTOR CURRENT

Figure 7. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC807/BC808
Package Dimensions

SOT-23

0.20 MIN
0.45~0.60
0.40 ±0.03

±0.10

±0.10
1.30

2.40
0.03~0.10

0.38 REF

0.40 ±0.03 +0.05

0.12 –0.023

0.96~1.14
2.90 ±0.10
0.97REF

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™

ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1

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