2SK3562

2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3562
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)

High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
Drain-gate voltage (RGS = 20 k)
VDGR
600
Gate-source voltage
VGSS
30
ID
DC
Drain current
(Note 1)
Pulse (t = 1 ms)
(Note 1)
1: Gate
2: Drain
3: Source
IDP
24
Drain power dissipation (Tc = 25C)
PD
40
Single pulse avalanche energy

(Note 2)
EAS
345
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
mJ
TOSHIBA
Channel temperature
Tch
150
Weight : 1.7 g (typ.)
Storage temperature range
Tstg
-55~150
JEDEC
JEITA
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 16.8 mH, IAR = 6 A, RG = 25

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
2006-11-08
2SK3562
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Typ.
Max
Unit
IGSS
VGS = 25 V, VDS = 0 V
10
IG = 10 A, VDS = 0 V
30
IDSS
VDS = 600 V, VGS = 0 V
100
Drain cut-off current

Drain-source breakdown voltage
Min
V (BR) GSS
Gate leakage current

Gate-source breakdown voltage
Test Condition
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Gate threshold voltage

Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
0.9
1.25
Forward transfer admittance
Yfs
VDS = 10 V, ID = 3 A
1.2
5.0
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
110
VOUT
20
RL =
66
40
35
130
28
16
12
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
50
Switching time
Fall time
ID = 3 A
10 V
VGS
0V
tr
tf
Turn-off time
VDD
200 V
Duty <
= 1%, tw = 10 s
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD
400 V, VGS = 10 V, ID = 6 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
(Note 1)
IDRP
24
Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
1.7
Reverse recovery time
trr
IDR = 6 A, VGS = 0 V,
1000
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/s
7.0
Marking
K3562
Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-08
2SK3562
ID VDS
ID VDS
15
4.8
COMMON SOURCE
Tc = 25C
PULSE TEST
10,15
10
6
5
5.2
(A)
COMMON
SOURCE
Tc = 25C
PULSE TEST
10
4.6
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
3
4.4
2
4.2
1
4.8
4.6
4
4.4
4.2
VGS = 4 V
0
0
DRAIN-SOURCE VOLTAGE
VDS
VGS = 4 V
0
0
10
(V)
10
ID VGS
VDS (V)
PULSE TEST
(A)
DRAIN CURRENT ID
VDS = 20 V
4
Tc = 55C
100
25
0
GATE-SOURCE VOLTAGE
VGS
10
Tc = 25
8
PULSE TEST
6
ID = 6 A
4
1.5
0
0
12
GATE-SOURCE VOLTAGE
16
VGS
20
(V)
RDS (ON) ID
10
Tc = 55C
25
100
1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
DRAIN CURRENT ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)
FORWARD TRANSFER ADMITTANCE

Yfs (S)
(V)
COMMON SOURCE
Yfs ID
0.1
0.1
VDS
50
10
(V)
100
10
40
VDS VGS
COMMON SOURCE
30
10
20
10
(A)
COMMON SOURCE
Tc = 25C
PULSE TEST
1
VGS = 10 V15V
0.1
0.1
DRAIN CURRENT ID
10
(A)
2006-11-08
2SK3562
RDS (ON) Tc
IDR VDS
10
COMMON SOURCE
DRAIN REVERSE CURRENT IDR

(A)
PULSE TEST
4
3
ID = 6A
3
VGS = 10 V
1.5
0
80
40
40
80
CASE TEMPERATURE
120
Tc
COMMON SOURCE
5
3
0.5
10
5
0.3
3
0.1
0
160
Tc = 25C
PULSE TEST
(C)
0.2
CAPACITANCE VDS
GATE THRESHOLD VOLTAGE

Vth (V)
(V)
Ciss
1000
Coss
100
10 COMMON SOURCE
VGS = 0 V
Crss
Tc = 25C
1
10
30 50
VDS
2
COMMON SOURCE
1
(V)
VDS (V)
40
30
20
10
120
CASE TEMPERATURE
40
80
120
Tc
160
(C)
DYNAMIC INPUT / OUTPUT

CHARACTERISTICS
50
80
40
CASE TEMPERATURE
PD Tc
40
ID = 1 mA
PULSE TEST
0
80
100
VDS = 10 V
160
Tc
200
(C)
500
400
20
VDS
16
VDD = 100 V
200
300
12
400
200
VGS
8
COMMON SOURCE
ID = 6 A
100
PULSE TEST
0
0
10
20
40
30
TOTAL GATE CHARGE
Tc = 25C
Qg
0
50
(V)
1
0.1
VGS
(pF)
VDS
1.2
Vth Tc
C
CAPACITANCE
0.8
f = 1 MHz
DRAIN POWER DISSIPATION

PD (W)
0.6
0.4
10000
0
0
VGS = 0, 1 V
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )
(nC)
2006-11-08
2SK3562
NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
rth tw
10
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01
0.01
Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10
100
10
PULSE WIDTH
100
10
tw (s)
SAFE OPERATING AREA
EAS Tch
100
500
AVALANCHE ENERGY
EAS (mJ)
ID max (PULSED) *
DRAIN CURRENT ID
(A)
100 s *
10
ID max (CONTINUOUS) *
1 ms *
DC OPERATION
Tc = 25C
400
300
200
100
SINGLE NONREPETITIVE
PULSE
0.1
0
25
Tc=25
CURVES MUST BE DERATED
TEMPERATURE.
0.01
1
10
VDSS max
100
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)

Tch (C)
LINEARLY WITH INCREASE IN
1000
VDS
(V)
15 V
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 16.8mH
VDS
WAVE FORM
AS =
1
B VDSS
L I2
B
V
VDSS
DD
2006-11-08
2SK3562
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2006-11-08

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2SK3562

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)

Absolute Maximum Ratings (Ta = 25C)

Drain-gate voltage (RGS = 20 k)

Drain power dissipation (Tc = 25C)

Single pulse avalanche energy

Repetitive avalanche energy (Note 3)

Weight : 1.7 g (typ.)

Storage temperature range

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 2: VDD = 90 V, Tch = 25C(initial), L = 16.8 mH, IAR = 6 A, RG = 25

VDS = 600 V, VGS = 0 V

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Reverse transfer capacitance

VDS = 25 V, VGS = 0 V, f = 1 MHz

Total gate charge

Source-Drain Ratings and Characteristics (Ta = 25C)

Continuous drain reverse current

Reverse recovery time

Reverse recovery charge

dIDR/dt = 100 A/s

Part No. (or abbreviation code)

FORWARD TRANSFER ADMITTANCE

DRAIN REVERSE CURRENT IDR

GATE THRESHOLD VOLTAGE

DYNAMIC INPUT / OUTPUT

TOTAL GATE CHARGE

DRAIN POWER DISSIPATION

NORMALIZED TRANSIENT THERMAL

SAFE OPERATING AREA

CHANNEL TEMPERATURE (INITIAL)

LINEARLY WITH INCREASE IN

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

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