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    Semiconductor KTC4379: Technical Data

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    chichedemoreno
    This document provides technical specifications for the KTC4379 epitaxial planar NPN transistor. The transistor features low saturation voltage of 0.5V or less and high-speed switching time of 1.0 microseconds or less. It is suitable for power amplifier and power switching applications. The document includes maximum ratings, dimensions, marking diagram, and electrical characteristics for the transistor.

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    Download as PDF, TXT or read online from Scribd

    Semiconductor KTC4379: Technical Data

    Uploaded by

    chichedemoreno
    12 views3 pages
    This document provides technical specifications for the KTC4379 epitaxial planar NPN transistor. The transistor features low saturation voltage of 0.5V or less and high-speed switching time of 1.0 microseconds or less. It is suitable for power amplifier and power switching applications. The document includes maximum ratings, dimensions, marking diagram, and electrical characteristics for the transistor.

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    KTC4379

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    This document provides technical specifications for the KTC4379 epitaxial planar NPN transistor. The transistor features low saturation voltage of 0.5V or less and high-speed switching time of 1.0 microseconds or less. It is suitable for power amplifier and power switching applications. The document includes maximum ratings, dimensions, marking diagram, and electrical characteristics for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    12 views3 pages

    Semiconductor KTC4379: Technical Data

    Uploaded by

    chichedemoreno
    This document provides technical specifications for the KTC4379 epitaxial planar NPN transistor. The transistor features low saturation voltage of 0.5V or less and high-speed switching time of 1.0 microseconds or less. It is suitable for power amplifier and power switching applications. The document includes maximum ratings, dimensions, marking diagram, and electrical characteristics for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SEMICONDUCTOR

    TECHNICAL DATA
    POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
    A

    KTC4379
    EPITAXIAL PLANAR NPN TRANSISTOR

    FEATURES
    Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) PC=1 2W (Mounted on Ceramic Substrate)
    D

    H G

    J B E

    Small Flat Package. Complementary to KTA1666.

    D K F F

    MAXIMUM RATING (Ta=25


    CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range

    )
    SYMBOL VCBO VCEO VEBO IC IB PC PC * Tj Tstg RATING 50 50 5 2 0.4 500 1 150 -55 150 UNIT V

    DIM A B C D E F G H J K

    MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05

    1. BASE

    V V A A mW W

    2. COLLECTOR (HEAT SINK) 3. EMITTER

    SOT-89

    Marking
    h FE Rank Lot No.

    PC* : KTC4379 mounted on ceramic substrate (250mm2x0.8t)


    Type Name

    ELECTRICAL CHARACTERISTICS (Ta=25


    CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note 1 : Pulse width 300 S, Duty Cycle 1% Note 2 : hFE(1) Classification 0:70 140, Y:120

    )
    TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=0.5A (Note 1) VCE=2V, IC=1.5A (Note 1) IC=1A, IB=0.05A (Note 1) IC=1A, IB=0.05A (Note 1) VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz
    20S IB1 INPUT I B2 I B1=-I B2 =0.05A < DUTY CYCLE = 1% IB1 30 I B2 OUTPUT

    SYMBOL ICBO IEBO V(BR)CEO hFE (1) (Note2) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf

    MIN. 50 70 40 -

    U
    TYP. 120 30 0.1 1.0 0.1 MAX. 0.1 0.1 240 0.5 1.2 S V V MHz pF

    UNIT A A V

    30V

    240

    1998. 6. 15

    Revision No : 2

    1/3

    KTC4379

    1998. 6. 15

    Revision No : 2

    2/3

    KTC4379

    1998. 6. 15

    Revision No : 1

    3/3

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