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    Technical Data: PNP Silicon Switching Transistor

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    roozbehxox
    This document provides technical specifications for PNP silicon switching transistors. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other electrical limits. It also provides typical values for various electrical characteristics when tested under different conditions, such as forward current transfer ratio, collector-emitter saturation voltage, and switching times. The transistors are qualified to MIL-PRF-19500/348 and are available in TO-39 and TO-5 packages.

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    Technical Data: PNP Silicon Switching Transistor

    Uploaded by

    roozbehxox
    32 views3 pages
    This document provides technical specifications for PNP silicon switching transistors. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other electrical limits. It also provides typical values for various electrical characteristics when tested under different conditions, such as forward current transfer ratio, collector-emitter saturation voltage, and switching times. The transistors are qualified to MIL-PRF-19500/348 and are available in TO-39 and TO-5 packages.

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    2n3467

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    This document provides technical specifications for PNP silicon switching transistors. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other electrical limits. It also provides typical values for various electrical characteristics when tested under different conditions, such as forward current transfer ratio, collector-emitter saturation voltage, and switching times. The transistors are qualified to MIL-PRF-19500/348 and are available in TO-39 and TO-5 packages.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    32 views3 pages

    Technical Data: PNP Silicon Switching Transistor

    Uploaded by

    roozbehxox
    This document provides technical specifications for PNP silicon switching transistors. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other electrical limits. It also provides typical values for various electrical characteristics when tested under different conditions, such as forward current transfer ratio, collector-emitter saturation voltage, and switching times. The transistors are qualified to MIL-PRF-19500/348 and are available in TO-39 and TO-5 packages.

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    of 3

    TECHNICAL DATA

    PNP SILICON SWITCHING TRANSISTOR


    Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV

    MAXIMUM RATINGS Ratings


    Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

    Symbol
    VCEO VCBO VEBO IC PT Top, Tstg

    2N3467 2N3467L
    40 40

    2N3468 2N3468L
    50 50

    Unit
    Vdc Vdc Vdc Adc W W 0 C

    @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C

    5.0 1.0 1.0 5.0 -55 to +175

    TO-39* (TO-205AD) 2N3467, 2N3468

    TO-5* 2N3467L, 2N3468L


    *See appendix A for package outline

    ELECTRICAL CHARACTERISTICS
    Characteristics Symbol Min. Max. Unit

    OFF CHARACTERISTICS
    Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 Adc Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 30 Vdc Collector-Emitter Cutoff Current VEB = 3.0 Vdc, VCE = 30 2N3467, L 2N3468, L V(BR)CBO V(BR)EBO 2N3467, L 2N3468, L V(BR)CEO ICBO ICEX 40 50 5.0 40 50 100 100 Vdc Vdc Vdc Adc nAdc

    6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101 Page 1 of 2

    2N3467, L, 2N3468, L, JAN SERIES

    ELECTRICAL CHARACTERISTICS (cont)


    Characteristics Symbol Min. Max. Unit

    ON CHARACTERISTICS (3)
    Forward-Current Transfer Ratio IC =150 mAdc, VCE = 1.0 Vdc 2N3467, L 2N3468, L 2N3467, L 2N3468, L 2N3467, L 2N3468, L VCE(sat) hFE 40 25 40 25 40 25 0.35 0.6 1.2 1.0 1.2 1.6 Vdc 120 75

    IC = 500 mAdc, VCE = 1.0 Vdc

    IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc

    VBE(sat)

    0.8

    Vdc

    DYNAMIC CHARACTERISTICS
    Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Extrapolated Unity Gain Frequency IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz 2N3467, L 2N3468, L Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz Cobo 25 pF

    ft

    175 150

    500 500 100 10 30 60 30

    MHz

    Cibo
    t

    pF ns ns ns ns

    SWITCHING CHARACTERISTICS Delay Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 Rise Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 Storage Time IC = 500 mAdc, IB1 = IB2 = 50 mAdc Fall Time IC = 100 mAdc, IB1 = IB2 = 50 mAdc

    d r t s t f
    t

    6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101 Page 2 of 2

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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