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SEMICONDUCTOR TECHNICAL DATA

 
 
 

  

 
. . . designed for use in general purpose amplifier and switching applications.



CollectorEmitter Saturation Voltage

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
CollectorEmitter Sustaining Voltage
VCEO(sus) = 60 Vdc (Min) TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package

*MAXIMUM RATINGS
Rating

CollectorEmitter Voltage

Symbol

TIP31A
TIP32A

TIP318
TIP32B

TIP31C
TIP32C

Unit

VCEO

60

80

100

Vdc

CollectorBase Voltage

VCB

60

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

3.0
5.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation

@ TC = 25_C
Derate above 25_C

PD

40
0.32

Watts
W/_C

Total Power Dissipation

@ TA = 25_C
Derate above 25_C

PD

2.0
0.016

Watts
W/_C

32

mJ

TJ, Tstg

65 to + 150

_C

Max

Unit

Unclamped Inductive
Load Energy (1)

Operating and Storage Junction

Temperature Range

 
 
 
*Motorola Preferred Device

3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 80 100 VOLTS
40 WATTS

CASE 221A06
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to Ambient

RJA

62.5

_C/W

Thermal Resistance, Junction to Case

RJC

3.125

_C/W

(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 ..

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

31

 
 
 
 
 
 

v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

60
80
100

0.3
0.3
0.3

200
200
200

IEBO

1.0

mAdc

hFE

25
10

50

VCE(sat)
VBE(on)

1.2

Vdc

1.8

Vdc

fT
hfe

3.0

MHz

20

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

TIP31A, TIP32A
TIP31B, TIP31C
TIP32B, TIP32C

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)

TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

ICEO

Vdc

Adc

ICES

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

(1) Pulse Test: Pulse Width

300 s, Duty Cycle

PD, POWER DISSIPATION (WATTS)

TC
40

TA
4.0

30

3.0

20

2.0

10

1.0

2.0%.

TC

TA

20

40

60
100
80
T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

TURNON PULSE
APPROX
+11 V

APPROX
+11 V

SCOPE

0.7
0.5

RB
t1
t3

Cjd << Ceb

t1 7.0 ns
100 < t2 < 500 s
t3 < 15 ns

t2
TURNOFF PULSE

IC/IB = 10
TJ = 25C

1.0
Vin

Vin

4.0 V

DUTY CYCLE 2.0%

APPROX 9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

Figure 2. Switching Time Equivalent Circuit

32

2.0

RC

t, TIME ( s)

Vin 0
VEB(off)

VCC

0.3

tr @ VCC = 30 V
tr @ VCC = 10 V

0.1
0.07
0.05
0.03
0.02
0.03

td @ VEB(off) = 2.0 V

0.05 0.07 0.1

0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)

Figure 3. TurnOn Time

Motorola Bipolar Power Transistor Device Data

3.0

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

 
 
 
 
 
 
1.0
0.7
0.5

D = 0.5

0.3
0.2

0.2
0.1

0.1
0.07
0.05

ZJC(t) = r(t) RJC

RJC(t) = 3.125C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZJC(t)

0.05
0.02

0.03
0.02

0.01

0.01
0.01

SINGLE PULSE
0.02

0.05

1.0

0.2

1.0

0.5

2.0
5.0
t, TIME (ms)

10

20

50

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

100

200

500

1.0 k

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMP)

10
5.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

100 s
5.0 ms

2.0
1.0
0.5

0.2
0.1
5.0

SECONDARY BREAKDOWN
LIMITED @ TJ 150C
THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C

1.0 ms

10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

100

Figure 5. Active Region Safe Operating Area

300
ts

t, TIME ( s)

1.0
0.7
0.5
0.3
0.2

tf @ VCC = 30 V

IB1 = IB2
IC/IB = 10
ts = ts 1/8 tf
TJ = 25C

TJ = + 25C
200
CAPACITANCE (pF)

3.0
2.0

tf @ VCC = 10 V

0.1
0.07
0.05
0.03
0.03

100
Ceb
70
50

0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)

Figure 6. TurnOff Time

Motorola Bipolar Power Transistor Device Data

2.0

3.0

30
0.1

Ccb

0.2 0.3

10
0.5
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)

20 30 40

Figure 7. Capacitance

33


 
 
 
 
 
 

hFE, DC CURRENT GAIN

300

100
70
50

TJ = 150C

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

500
VCE = 2.0 V

25C
55C

30

10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMP)

3.0

2.0
TJ = 25C
1.6

0.4

0
1.0

V, TEMPERATURE COEFFICIENTS (mV/C)

VBE @ VCE = 2.0 V

0.4
VCE(sat) @ IC/IB = 10

0
0.003 0.005 0.01 0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0

IC, COLLECTOR CURRENT ( A)

100
101
102

200

500 1000

+ 2.0
+ 1.5

*APPLIES FOR IC/IB hFE/2

TJ = 65C TO + 150C

+ 1.0
*VC FOR VCE(sat)

+ 0.5
0
0.5
1.0

VB FOR VBE

1.5
2.0

2.5
0.003 0.005 0.01 0.02

0.05

0.1

0.2 0.3 0.5

1.0

Figure 10. On Voltages

Figure 11. Temperature Coefficients

VCE = 30 V
TJ = 150C

100C
REVERSE

FORWARD

25C

103
0.4 0.3 0.2 0.1

34

10
20
50
100
IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

103

101

5.0

IC, COLLECTOR CURRENT (AMPS)

ICES
0

+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

0.6

102

2.0

+ 2.5
TJ = 25C

1.0

0.2

3.0 A

Figure 9. Collector Saturation Region

1.4

0.8

1.0 A

0.8

Figure 8. DC Current Gain

1.2

IC = 0.3 A

1.2

2.0 3.0

107

105

IC ICES

104

IC = 2 x ICES

103
102
20

VCE = 30 V

IC = 10 x ICES

106

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
40

60

80

100

120

140

160

VBE, BASEEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region

Figure 13. Effects of BaseEmitter Resistance

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data

35


 
 
 
 
 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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36

Motorola Bipolar Power Transistor Device Data

*TIP31A/D*

TIP31A/D

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