Scribd Logo
Upload

Welcome to Scribd!

  • 22 views

    Features: Vishay Semiconductors

    Uploaded by

    Luiz Rv
    This document provides specifications for the 2N4401 NPN silicon epitaxial transistor from Vishay Semiconductors. It is available in a TO-226AA (TO-92) plastic package and is intended for switching and amplifier applications. Key parameters include a maximum collector-emitter voltage of 40V, collector current of 600mA, and current gain of 80 typical. Electrical characteristics like saturation voltage, cutoff current, and switching times are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Features: Vishay Semiconductors

    Uploaded by

    Luiz Rv
    22 views4 pages
    This document provides specifications for the 2N4401 NPN silicon epitaxial transistor from Vishay Semiconductors. It is available in a TO-226AA (TO-92) plastic package and is intended for switching and amplifier applications. Key parameters include a maximum collector-emitter voltage of 40V, collector current of 600mA, and current gain of 80 typical. Electrical characteristics like saturation voltage, cutoff current, and switching times are provided.

    Original Title

    2n4401

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the 2N4401 NPN silicon epitaxial transistor from Vishay Semiconductors. It is available in a TO-226AA (TO-92) plastic package and is intended for switching and amplifier applications. Key parameters include a maximum collector-emitter voltage of 40V, collector current of 600mA, and current gain of 80 typical. Electrical characteristics like saturation voltage, cutoff current, and switching times are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    22 views4 pages

    Features: Vishay Semiconductors

    Uploaded by

    Luiz Rv
    This document provides specifications for the 2N4401 NPN silicon epitaxial transistor from Vishay Semiconductors. It is available in a TO-226AA (TO-92) plastic package and is intended for switching and amplifier applications. Key parameters include a maximum collector-emitter voltage of 40V, collector current of 600mA, and current gain of 80 typical. Electrical characteristics like saturation voltage, cutoff current, and switching times are provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2N4401

    New Product

    Vishay Semiconductors
    formerly General Semiconductor

    Small Signal Transistor (NPN)

    TO-226AA (TO-92)
    0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

    Features
    NPN Silicon Epitaxial Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N4403 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT4401,

    Mechanical Data
    Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

    max. 0.022 (0.55) 0.098 (2.5)


    Dimensions in inches and (millimeters)

    Bottom View

    Maximum Ratings & Thermal Characteristics


    Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Ptot RJA RJC Tj TS

    Ratings at 25C ambient temperature unless otherwise specified.

    Value 40 60 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150

    Unit V V V mA mW mW/C mW mW/C C/W C/W C C

    Document Number 88117 08-May-02

    www.vishay.com 1

    2N4401
    Vishay Semiconductors
    formerly General Semiconductor

    Electrical Characteristics (T
    Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Base Cutoff Current
    (1)

    = 25C unless otherwise noted)

    Symbol V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV IBEV

    Test Condition IC = 0.1 mA, IE = 0 IC = 1 mA, IB = 0 IE = 0.1 mA, IC = 0 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 0.4 V, VCE = 35 V VEB = 0.4 V, VCE = 35 V VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 150 mA VCE = 2 V, IC = 500 mA VCE = 10 V, IC = 1 mA f = 1 kHz VCE = 10 V, IC = 1 mA f = 1 kHz VCE = 5 V, IC = 20 mA f = 100 MHz VCB = 5 V, IE = 0, f = 1.0 MHz VCB = 0.5 V, I C = 0, f = 1.0 MHz VCE = 10 V, I C = 1 mA, f = 1 kHz VCE = 10 V, I C = 1 mA, f = 1 kHz

    Min 60 40 6.0 0.75 20 40 80 100 40 1.0 0.1 10-4 250 40 1.0

    Typ

    Max 0.40 0.75 0.95 1.20 100 100 300 15 8 10-4 6.5 30 500 30

    Unit V V V V V nA nA

    DC Current Gain

    hFE

    Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance

    hie hre fT CCBO CEBO hfe hoe

    k MHz pF pF S

    www.vishay.com 2

    Document Number 88117 08-May-02

    2N4401
    Vishay Semiconductors
    formerly General Semiconductor

    Electrical Characteristics (T
    Parameter Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2)

    = 25C unless otherwise noted)

    Symbol td tr ts tf

    Test Condition I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA

    Min

    Typ

    Max 15 20 225 30

    Unit ns ns ns ns

    Switching Time Equivalent Test Circuit


    Figure 1 - Turn-ON Time
    1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -2 V < 2 ns 1k C S* < 10 pF +30V 200

    Figure 2 - Turn-OFF Time


    1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -14 V
    Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope

    +30V 200

    1k < 20 ns -4 V

    C S* < 10 pF

    Document Number 88117 08-May-02

    www.vishay.com 3

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

    You might also like