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    2Sb507 PNP Epitaxial Silicon Transistor: Low Frequency Power Amplifier

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    Jesus D. Jaraba
    This document provides specifications for an epitaxial silicon transistor with part number 2SB507 that is intended for use as a low frequency power amplifier in a TO-220 package. Key details include that it is a PNP transistor intended to complement part 2SD313. Absolute maximum ratings and typical electrical characteristics are provided such as a collector-emitter voltage rating of -60V, DC current gain of 320, and current gain bandwidth product minimum of 8MHz. Contact information is also listed for the manufacturer Wing Shing Computer Components Co.

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    2Sb507 PNP Epitaxial Silicon Transistor: Low Frequency Power Amplifier

    Uploaded by

    Jesus D. Jaraba
    30 views2 pages
    This document provides specifications for an epitaxial silicon transistor with part number 2SB507 that is intended for use as a low frequency power amplifier in a TO-220 package. Key details include that it is a PNP transistor intended to complement part 2SD313. Absolute maximum ratings and typical electrical characteristics are provided such as a collector-emitter voltage rating of -60V, DC current gain of 320, and current gain bandwidth product minimum of 8MHz. Contact information is also listed for the manufacturer Wing Shing Computer Components Co.

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    2SB507

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    This document provides specifications for an epitaxial silicon transistor with part number 2SB507 that is intended for use as a low frequency power amplifier in a TO-220 package. Key details include that it is a PNP transistor intended to complement part 2SD313. Absolute maximum ratings and typical electrical characteristics are provided such as a collector-emitter voltage rating of -60V, DC current gain of 320, and current gain bandwidth product minimum of 8MHz. Contact information is also listed for the manufacturer Wing Shing Computer Components Co.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views2 pages

    2Sb507 PNP Epitaxial Silicon Transistor: Low Frequency Power Amplifier

    Uploaded by

    Jesus D. Jaraba
    This document provides specifications for an epitaxial silicon transistor with part number 2SB507 that is intended for use as a low frequency power amplifier in a TO-220 package. Key details include that it is a PNP transistor intended to complement part 2SD313. Absolute maximum ratings and typical electrical characteristics are provided such as a collector-emitter voltage rating of -60V, DC current gain of 320, and current gain bandwidth product minimum of 8MHz. Contact information is also listed for the manufacturer Wing Shing Computer Components Co.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SB507

    PNP

    EPITAXIAL SILICON TRANSISTOR

    LOW FREQUENCY POWER AMPLIFIER


    TO-220
    ! Complement to 2SD313

    ABSOLUTE MAXIMUM RATINGS (Ta=25C)

    Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25c) Junction Temperature Storage Temperature

    Symbol VCBO VCEO VEBO IC PC Tj Tstg

    Rating -60 -60 -7 -3 30 150 -50~150

    Unit V V V A W 25c 25c

    ELECTRICAL CHARACTERISTICS (Ta=25C)

    Characterristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product

    Symbol ICBO IEBO hFE1 VCE(sat) fT

    Test Condition VCB= -60V , IE=0 VEB= -7V , IC=0 VCE= -2V , IC=-1A IC=-2A , IB=-0.2A VCE=- 5V , IC=-0.5A

    Min

    Typ

    Max -100 -100 320 -1.0

    Unit A A V MHZ

    40 8

    Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com

    Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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