Scribd Logo
Upload

Welcome to Scribd!

  • 20 views

    2SD1265

    Uploaded by

    vdăduică
    This document provides specifications for an NPN epitaxial silicon transistor intended for use as a power amplifier in vertical deflection output applications. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector dissipation, junction temperature, and storage temperature. Electrical characteristics tested at 25 degrees Celsius include minimum and maximum values for collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and current gain bandwidth product.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    2SD1265

    Uploaded by

    vdăduică
    20 views1 page
    This document provides specifications for an NPN epitaxial silicon transistor intended for use as a power amplifier in vertical deflection output applications. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector dissipation, junction temperature, and storage temperature. Electrical characteristics tested at 25 degrees Celsius include minimum and maximum values for collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and current gain bandwidth product.

    Original Title

    2SD1265(1)

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an NPN epitaxial silicon transistor intended for use as a power amplifier in vertical deflection output applications. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector dissipation, junction temperature, and storage temperature. Electrical characteristics tested at 25 degrees Celsius include minimum and maximum values for collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and current gain bandwidth product.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views1 page

    2SD1265

    Uploaded by

    vdăduică
    This document provides specifications for an NPN epitaxial silicon transistor intended for use as a power amplifier in vertical deflection output applications. The transistor has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector dissipation, junction temperature, and storage temperature. Electrical characteristics tested at 25 degrees Celsius include minimum and maximum values for collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and current gain bandwidth product.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SD1265

    NPN EPITAXIAL SILICON TRANSISTOR

    POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT


    SC-67

    ABSOLUTE MAXIMUM RATINGS (TA=25!)


    Characteristic Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 60 5 4 30 150 -50~150 Unit V V V A W
    ! !

    Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25!) Junction Temperature Storage Temperature

    ELECTRICAL CHARACTERISTICS (TA=25!)


    Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= 150V , IE=0 VEB= 5V , IC=0 VCE= 3.0V ,IC=-1.0A IC=3A ,IB=-0.3mA VCE= -10V ,IC=-0.5A Min Typ Max 10 10 240 1.0 60 Unit
    A A

    70

    V MHZ

    Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com

    Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]

    You might also like