APT6029BLL

APT6029SLL
600V 21A 0.290Ω

POWER MOS 7 MOSFET

R BLL

®
D3PAK
Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
SLL
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive G
• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT6029BFLL_SFLL UNIT
VDSS Drain-Source Voltage 600 Volts
ID Continuous Drain Current @ TC = 25°C 21
Amps
IDM 1
Pulsed Drain Current 84
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 300 Watts
PD
Linear Derating Factor 2.40 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current 1
(Repetitive and Non-Repetitive) 21 Amps
EAR 1
Repetitive Avalanche Energy 30
mJ
EAS 4
Single Pulse Avalanche Energy 1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 Volts

RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 10.5A) 0.290 Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 500
9-2004

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 5 Volts

050-7054 Rev D

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT6029BLL_SLL
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C iss Input Capacitance 2615
VGS = 0V
Coss Output Capacitance VDS = 25V 420 pF
C rss Reverse Transfer Capacitance f = 1 MHz 47
Qg Total Gate Charge 3 VGS = 10V 65
Qgs VDD = 300V
Gate-Source Charge 13 nC
ID = 21A @ 25°C
Qgd Gate-Drain ("Miller ") Charge 36
RESISTIVE SWITCHING
td(on) Turn-on Delay Time 9
VGS = 15V
tr Rise Time VDD = 300V 5
ns
td(off) Turn-off Delay Time ID = 21A @ 25°C 23
RG = 1.6Ω
tf Fall Time 4
INDUCTIVE SWITCHING @ 25°C
Eon Turn-on Switching Energy 6 225
VDD = 400V, VGS = 15V
Eoff Turn-off Switching Energy ID = 21A, RG = 5Ω 90
INDUCTIVE SWITCHING @ 125°C µJ
Eon Turn-on Switching Energy 6 360
VDD = 400V VGS = 15V
Eoff Turn-off Switching Energy ID = 21A, RG = 5Ω 110
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 21
Amps
ISM Pulsed Source Current 1 (Body Diode) 84
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -21A) 1.3 Volts
t rr Reverse Recovery Time (IS = -21A, dl S/dt = 100A/µs) 580 ns
Q rr Reverse Recovery Charge (IS = -21A, dl S /dt = 100A/µs) 7.92 µC
dv/
dt Peak Diode Recovery dv/
dt
5
8 V/ns

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.42
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 5.49mH, RG = 25Ω, Peak IL = 21A
temperature 5 dv/dt numbers reflect the limitations of the test circuit rather than the
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.45

0.40 0.9
Z JC, THERMAL IMPEDANCE (°C/W)

0.35

0.30 0.7

0.25
0.5
Note:
0.20
PDM
9-2004

t1
0.15
0.3
t2
0.10
Duty Factor D = t1/t2
050-7054 Rev D

0.05 0.1 Peak TJ = PDM x ZθJC + TC

0.05 SINGLE PULSE
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves APT6029BLL_SLL
60
VGS =15 &10V
50 8V

ID, DRAIN CURRENT (AMPERES)

RC MODEL 7V
40
Junction
temp. (°C)
30 6.5
0.161 0.00994F
Power
20 6V
(watts)

0.259 0.236F
10 5.5V
Case temperature. (°C)
5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
80 1.40

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

NORMALIZED TO
VDS> ID (ON) x RDS(ON) MAX.
V = 10V @ I = 10.5A
GS D
70 250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE 1.30
ID, DRAIN CURRENT (AMPERES)

60
1.20
50
VGS=10V
40 1.10

30 VGS=20V
TJ = +125°C 1.00
20
TJ = +25°C
0.90
10
TJ = -55°C
0 0.80
0 2 4 6 8 10 0 10 20 30 40 50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
25 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

20 1.10
VOLTAGE (NORMALIZED)

15 1.05

10 1.00

5 0.95

0 0.90
50 75 25
100 125 150 -50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5 1.2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

I = 10.5A
D
V = 10V
GS
1.1
VGS(TH), THRESHOLD VOLTAGE

2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9
1.0
0.8
9-2004

0.5
0.7
050-7054 Rev D

0.0 0.6
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT6029BLL_SLL
84 10,000
OPERATION HERE
50 LIMITED BY RDS (ON)
Ciss
ID, DRAIN CURRENT (AMPERES)

C, CAPACITANCE (pF)
100µS 1,000

Coss
10

100

1mS Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1 10mS 10
1 10 100 600 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = 21A
D

VDS=100V 100

12
VDS=250V
VDS=400V TJ =+150°C
TJ =+25°C
8
10

0 1
0 10
20 30 40 50 60 70 80 90 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50 50
td(off)

40 40
td(on) and td(off) (ns)

V = 400V
DD tf
tr and tf (ns)

30 R
G
= 5Ω 30
T = 125°C
J
L = 100µH V = 400V
DD
R = 5Ω
20 20 G
tr
T = 125°C
J
L = 100µH

10 td(on) 10

0 0
0 155 20 10
25 30 35 0 15 5 20 10
25 30 35
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
700 800
V = 400V
DD V = 400V
DD
R = 5Ω 700 Eoff
600 G I = 21A
D
T = 125°C
J T = 125°C
J
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)

L = 100µH
Eon 600 L = 100µH
500 E ON includes E ON includes
diode reverse recovery.
500 diode reverse recovery.
400
Eon
400
300
300
9-2004

200 Eoff 200

100 100
050-7054 Rev D

0 0
0 15 20525 301035 0 5
10 15 20 25 30 35 40 45 50
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
 APT6029BLL_SLL

Gate Voltage
10 %
90%
TJ = 125 C Gate Voltage T = 125 C
J
td(on) td(off)

tr
Drain Voltage
Drain Current
90%
90%
5% tf
5% 10%
Drain Current
Drain Voltage
10 %

Switching Energy
Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions

APT15DF60

V DD ID V DS

D.U.T.

Figure 20, Inductive Switching Test Circuit

3
TO-247 Package Outline D PAK Package Outline

4.69 (.185) 4.98 (.196) 15.95 (.628) 13.41 (.528)

(Heat Sink)

5.31 (.209) 15.49 (.610) 5.08 (.200) 16.05 (.632) 13.51 (.532)
1.49 (.059) 16.26 (.640) 1.47 (.058) 1.04 (.041)
2.49 (.098) 1.57 (.062) 1.15 (.045)
Drain

5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Revised 11.51 (.453)
20.80 (.819) Revised 13.79 (.543) 8/29/97
Drain

11.61 (.457)
21.46 (.845) 4/18/95 13.99 (.551)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
1.27 (.050)
0.020 (.001) 1.40 (.055)
4.50 (.177) Max. 2.87 (.113) 0.178 (.007) 3.81 (.150)
3.12 (.123) 1.98 (.078) 4.06 (.160)
2.67 (.105) 2.08 (.082) (Base of Lead)
1.65 (.065) 2.84 (.112) 1.22 (.048)
9-2004

0.40 (.016)
0.79 (.031) 19.81 (.780) 2.13 (.084) 1.32 (.052)
20.32 (.800)
Heat Sink (Drain)
1.01 (.040) Gate 5.45 (.215) BSC and Leads
1.40 (.055) {2 Plcs.} are Plated
Drain
Source
050-7054 Rev D

Source
2.21 (.087)
2.59 (.102) 5.45 (.215) BSC Drain
2-Plcs. Gate
Dimensions in Millimeters and (Inches) Dimensions in Millimeters (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.