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NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P12K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.

General Features
● VDS =-60V,ID =-12A
RDS(ON) <100mΩ @ VGS=-10V Schematic diagram
RDS(ON) <125mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application Marking and pin assignment

● High side switch for full bridge converter
● DC/DC converter for LCD display

100% UIS TESTED!

100% ∆Vds TESTED! TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
NCE60P12K NCE60P12K TO-252-2L - - -

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID -12 A
Drain Current-Continuous(TC=100℃) ID (100℃) -8.5 A
Pulsed Drain Current IDM -30 A
Maximum Power Dissipation PD 60 W
Derating factor 0.4 W/℃
(Note 5)
Single pulse avalanche energy EAS 50 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2) RθJC 2.5 ℃/W

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Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V
Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -2.2 V
VGS=-10V, ID=-12A - 84 100 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=-4.5V, ID=-8A - 100 125 mΩ
Forward Transconductance gFS VDS=-5V,ID=-12A - 10 - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss - 1630.7 - PF
VDS=-30V,VGS=0V,
Output Capacitance Coss - 90.6 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 77.3 - PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 11 - nS
Turn-on Rise Time tr VDD=-30V, RL=1.5Ω， - 14 - nS
Turn-Off Delay Time td(off) VGS=-10V,RG=3Ω - 33 - nS
Turn-Off Fall Time tf - 13 - nS
Total Gate Charge Qg - 37.6 nC
VDS=-30,ID=-12A,
Gate-Source Charge Qgs - 4.3 nC
VGS=-10V
Gate-Drain Charge Qgd - 7.2 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-12A - -1.2 V
(Note 2)
Diode Forward Current IS - - -12 A
Reverse Recovery Time trr TJ = 25°C, IF =- 12A - 35 nS
(Note3)
Reverse Recovery Charge Qrr di/dt = -100A/μs - 38 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω

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Test Circuit
1) EAS Test Circuit

2) Gate Charge Test Circuit

3) Switch Time Test Circuit

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Typical Electrical and Thermal Characteristics (Curves)

Normalized On-Resistance
ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature

Vgs Gate-Source Voltage (V)

ID- Drain Current (A)

Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)

Figure 2 Transfer Characteristics Figure 5 Gate Charge
Rdson On-Resistance(mΩ)

Is- Reverse Drain Current (A)

ID- Drain Current (A) Vsd Source-Drain Voltage (V)

Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward

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Power Dissipation (W)

C Capacitance (pF)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Capacitance vs Vds Figure 9 Power De-rating

ID- Drain Current (A)

ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 8 Safe Operation Area Figure 10 ID Current De-rating
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance

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TO-252 Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 TYP. 0.190 TYP.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP. 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP. 0.063 TYP.
L4 0.600 1.000 0.024 0.039
Φ 1.100 1.300 0.043 0.051
θ 0° 8° 0° 8°
h 0.000 0.300 0.000 0.012
V 5.350 TYP. 0.211 TYP.

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Attention

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
■ NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
■ This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

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