D

TO-247
G

S APT6030BN 600V 23.0A 0.30Ω

APT6033BN 600V 22.0A 0.33Ω

POWER MOS IV ®

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT APT
Symbol Parameter 6030BN 6033BN UNIT
VDSS Drain-Source Voltage 600 600 Volts
ID Continuous Drain Current @ TC = 25°C 23 22
Amps
IDM 1
Pulsed Drain Current 92 88
VGS Gate-Source Voltage ±30 Volts

Total Power Dissipation @ TC = 25°C 360 Watts

PD
Linear Derating Factor 2.9 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT

Drain-Source Breakdown Voltage APT6030BN 600

BVDSS Volts
(VGS = 0V, ID = 250 µA)
APT6033BN 600
On State Drain Current 2 APT6030BN 23
ID(ON) Amps
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
APT6033BN 22
2
Drain-Source On-State Resistance APT6030BN 0.30
RDS(ON) Ohms
(VGS = 10V, 0.5 ID [Cont.]) APT6033BN 0.33
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 4 Volts

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RθJC Junction to Case 0.34
°C/W
RθJA Junction to Ambient 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-6008 Rev B

USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT6030/6033BN

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 2905 3500
Coss Output Capacitance VDS = 25V 505 710 pF
Crss Reverse Transfer Capacitance f = 1 MHz 190 285
Qg Total Gate Charge 3 VGS = 10V 140 210
Qgs Gate-Source Charge VDD = 0.5 VDSS 18 27 nC
Qgd Gate-Drain ("Miller ") Charge ID = ID [Cont.] @ 25°C
75 110
td(on) Turn-on Delay Time VGS = 15V 20 40
tr Rise Time VDD = 0.5 VDSS 35 70
ns
td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 90 130
tf RG = 1.8Ω
Fall Time 50 100

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT

Continuous Source Current APT6030BN 23

IS
(Body Diode) APT6033BN 22
Amps
Pulsed Source Current 1 APT6030BN 92
ISM
(Body Diode) APT6033BN 88
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs) 480 960 ns
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs) 8 16 µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol Characteristic Test Conditions / Part Number MIN TYP MAX UNIT
SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 360
Watts
SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 360
APT6030BN 92
ILM Inductive Current Clamped Amps
APT6033BN 88
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.5
Z JC, THERMAL IMPEDANCE (°C/W)

D=0.5

0.1
0.2

0.05 0.1

0.05

0.02 Note:
0.01
PDM

0.01 t1
0.005
t2
050-6008 Rev B

SINGLE PULSE Duty Factor D = t1/t

2
Peak TJ = PDM x ZθJC + TC
0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT6030/6033BN
20 20
VGS=7, 8, &10V VGS=10V
6.5V 8V 6.5V
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

16 16
7V

12 6V 12 6V

8 8
5.5V 5.5V

4 4
5V 5V

4.5V 4.5V
0 0
0 50 100 150 200 250 0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

40 2.50
TJ = -55°C TJ = +25°C TJ = 25°C
250µSEC. PULSE TEST
ID, DRAIN CURRENT (AMPERES)

@ <0.5 % DUTY CYCLE

VDS> ID (ON) x RDS (ON)MAX. TJ = +125°C
32 250µSEC. PULSE TEST NORMALIZED TO
@ <0.5 % DUTY CYCLE 2.00 V = 10V @ 0.5 I [Cont.]
GS D

24
1.50 VGS=10V
16

VGS=20V
1.00
8
TJ = +125°C
TJ = -55°C
TJ = +25°C
0 0.50
0 2 4 6 8 10 0 10 20 30 40 50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN

24 1.2
ID, DRAIN CURRENT (AMPERES)

20
APT6030BN 1.1
VOLTAGE (NORMALIZED)

16
APT6033BN
1.0
12

0.9
8

0.8
4

0 0.7
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.4
I = 0.5 I [Cont.]
D D
V = 10V
VGS(TH), THRESHOLD VOLTAGE

GS
2.0 1.2
(NORMALIZED)

(NORMALIZED)

1.5 1.0

1.0 0.8

0.5 0.6
050-6008 Rev B

0.0 0.4
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT6030/6033BN
APT6030BN
100 10µS 10,000
APT6033BN
OPERATION HERE
LIMITED BY RDS (ON)
ID, DRAIN CURRENT (AMPERES) APT6030BN 100µS 5,000
APT6033BN
Ciss

C, CAPACITANCE (pF)
10
1mS

10mS 1,000

100mS Coss
1 500
TC =+25°C DC
TJ =+150°C Crss
SINGLE PULSE

.1 100
1 5 10 50 100 500 1000 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=120V 100
16
VDS=300V 50

12 TJ =+150°C TJ =+25°C
20

VDS=480V 10
8

5
4
2

0 1
40 80 0 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247AD Package Outline

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)

20.80 (.819)
Drain

21.46 (.845)
3.55 (.140)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) Gate
1.01 (.040)
1.40 (.055) Drain
Source
050-6008 Rev B

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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