APT12031JFLL

1200V 30A 0.33 Ω

R
POWER MOS 7 FREDFET S S

27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
2
enhancement mode power MOSFETS. Both conduction and switching G D
T-
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
SO
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's "UL Recognized"
ISOTOP ®
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package G

• FAST RECOVERY BODY DIODE S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT12031JLL UNIT
VDSS Drain-Source Voltage 1200 Volts
ID Continuous Drain Current @ TC = 25°C 30
Amps
IDM 1
Pulsed Drain Current 120
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 690 Watts
PD
Linear Derating Factor 5.52 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1 Amps
Avalanche Current (Repetitive and Non-Repetitive) 30
EAR 1
Repetitive Avalanche Energy 50
mJ
EAS 4
Single Pulse Avalanche Energy 3600
STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 Volts

RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 15A) 0.33 Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250
IDSS µA
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000
2-2009

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 5mA)

050-7081 Rev C

3 5 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT12031JFLL
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C iss Input Capacitance VGS = 0V 9480
Coss Output Capacitance VDS = 25V 1460 pF
Crss f = 1 MHz
Reverse Transfer Capacitance 250
Qg Total Gate Charge 3 VGS = 10V 365
Qgs Gate-Source Charge VDD = 600V 45 nC
ID = 30A @ 25°C
Qgd Gate-Drain ("Miller ") Charge 235
td(on) RESISTIVE SWITCHING
Turn-on Delay Time 23
VGS = 15V
tr Rise Time 16
VDD = 600V ns
td(off) Turn-off Delay Time ID = 30A @ 25°C 79
tf Fall Time RG = 0.6Ω 30
INDUCTIVE SWITCHING @ 25°C
Eon Turn-on Switching Energy 6 1760
VDD = 800V, VGS = 15V
Eoff Turn-off Switching Energy ID = 30A, RG = 5Ω 1241
µJ
INDUCTIVE SWITCHING @ 125°C
Eon Turn-on Switching Energy 6 3035
VDD = 800V VGS = 15V
Eoff Turn-off Switching Energy ID = 30A, RG = 5Ω 1557
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 30
Amps
ISM Pulsed Source Current 1 (Body Diode) 120
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -30A) 1.3 Volts
dv/ dv/ 5 V/ns
dt Peak Diode Recovery dt 18
Reverse Recovery Time Tj = 25°C 300
t rr ns
(IS = -30A, di/dt = 100A/µs) Tj = 125°C 600
Reverse Recovery Charge Tj = 25°C 1.8
Q rr µC
(IS = -30A, di/dt = 100A/µs) Tj = 125°C 7.4
Peak Recovery Current Tj = 25°C 16
IRRM Amps
(IS = -30A, di/dt = 100A/µs) Tj = 125°C 30
THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.18
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 8.0mH, RG = 25Ω, Peak IL = 30A
temperature 5 dv/dt numbers reflect the limitations of the test circuit rather than the
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.20
Z JC, THERMAL IMPEDANCE (°C/W)

0.9
0.16

0.7
0.12

0.5 Note:
PDM

0.08
2-2009

t1
0.3
t2

Duty Factor D = t1/t2

050-7081 Rev C

0.04
θ

0.1 Peak TJ = PDM x ZθJC + TC

0.05 SINGLE PULSE
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves APT12031JFLL
80
VGS =15 & 10V 6.5V
70 6V

ID, DRAIN CURRENT (AMPERES)

RC MODEL
Junction 60
temp C 5.5V
50
0.0375 0.0554F
Power 40
(watts)
5V
30
0.142 0.751F
20
Case temperature C
10 4.5V

4V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
80

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

1.40
NORMALIZED TO
VDS> ID (ON) x RDS (ON)MAX.
V = 10V @ 15A
250 µSEC. PULSE TEST GS
ID, DRAIN CURRENT (AMPERES)

@ <0.5 % DUTY CYCLE 1.30

60
1.20

40 TJ = -55°C 1.10 VGS=10V

TJ = +125°C
1.00 VGS=20V
20 TJ = +25°C
0.90

0 0.80
0 1 2 3 4 5 6 7 0 10 20 30 40 50 60
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN

30
1.10
ID, DRAIN CURRENT (AMPERES)

VOLTAGE (NORMALIZED)

25
1.05
20
1.00
15

0.95
10

5 0.90

0 0.85
50 75 25
100 125 150 -50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

1.2
I = 15A
D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

2.0 1.1

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9
1.0
0.8
2-2009

0.5
0.7
050-7081 Rev C

0.0 0.6
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT12031JFLL
121 30,000
OPERATION HERE
LIMITED BY RDS (ON)

ID, DRAIN CURRENT (AMPERES)

100µS Ciss
10,000

C, CAPACITANCE (pF)
10
Coss
1mS 1,000

TC =+25°C 10mS
TJ =+150°C Crss
SINGLE PULSE
1 100
1 10 100 1200 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16 300

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = 30A
D

100
12
TJ =+150°C
VDS= 120V
TJ =+25°C

8 VDS= 600V
VDS= 960V
10

0 1
100 0 200 300 400 500 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
400 80
V = 800V
DD

350 td(off) 70 R
G
= 5Ω
T = 125°C
J tf
300 60 L = 100µH
td(on) and td(off) (ns)

V = 800V
DD
250 50
tr and tf (ns)

R = 5Ω
G
T = 125°C
J
200 40
L = 100µH

150 30

100 20 tr

50 10
td(on)
0 0
10 3020 40 50 10 30 20 40 50
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000 6000
V = 800V
DD
R = 5Ω
G
Eon 5000 Eoff
4500 T = 125°C
J
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)

L = 100µH
EON includes
4000
diode reverse recovery.
3000
Eon
3000

2000
V = 800V
2000 DD
2-2009

I = 30A
D
T = 125°C
Eoff J
1000
1000 L = 100µH
E ON includes
050-7081 Rev C

diode reverse recovery.

0 0
10 15 30 20
35 40 45 5025 5 0
10 15 20 25
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves APT12031JFLL

Gate Voltage
10 %
90%
T = 125 C Gate Voltage T = 125 C
J J

td(on)
t
d(off)

tr

Drain Current Drain Voltage

90%

5% 5% 90%
10 % Drain Voltage
10% Drain Current
t 0
Switching Energy Switching Energy f

Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions

APT30DF120

V DD IC V CE

D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
2-2009

14.9 (.587) * Source Drain

15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
050-7081 Rev C

38.0 (1.496) capability is equal for either

38.2 (1.504) Source terminal.

* Source Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.