SMD Type MOSFET

P-Channel MOSFET
WPM2015 (KPM2015)
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
■ Features

+0.1
2.4 -0.1

+0.1
1.3 -0.1
● VDS (V) =-20V
● ID =-2.4 A

0.55
1 2

● RDS(ON) ＜ 110mΩ (VGS =-4.5V) 0.95 -0.1

+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

● RDS(ON) ＜ 150mΩ (VGS =-2.5V)

+0.1
0.97 -0.1
● Supper high density cell design
1. Gate
2. Source

+0.1
0.38 -0.1
0-0.1
D 3. Drain
3

1 2
G S

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol 10 S Steady State Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS ±8
Ta=25°C -2.4 -2.2
Continuous Drain Current (Note.1) ID A
Ta=70°C -1.9 -1.7
Ta=25°C 0.9 0.8
Power Dissipation (Note.1) PD W
Ta=70°C 0.5 0.5
Ta=25°C -2.2 -2
Continuous Drain Current (Note.2) ID A
Ta=70°C -1.7 -1.6
Ta=25°C 0.7 0.6
Power Dissipation (Note.2) PD W
Ta=70°C 0.5 0.4
Pulsed Drain Current (Note.3) IDM -10 A
(Note.1) 135 155
Thermal Resistance.Junction- to-Ambient RthJA
(Note.2) 160 190 ℃/W
Thermal Resistance.Junction- to-Case RthJC __ 75
Junction Temperature TJ 150
Lead Temperature TL 260 ℃
Junction Storage Temperature Range Tstg -55 to 150

Note.1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Note.2: Surface mounted on FR-4 board using minimum pad size, 1oz copper
Note.3: Pulse width<380μs, Duty Cycle<2%

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 SMD Type MOSFET

P-Channel MOSFET
WPM2015 (KPM2015)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V
Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA
Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.4 -0.81 V
VGS=-4.5V, ID=-2.7A 110
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=-2.5V, ID=-2.2A 150
Input Capacitance Ciss 534
Output Capacitance Coss VGS=0V, VDS=-10V, f=1MHz 62 pF
Reverse Transfer Capacitance Crss 54
Total Gate Charge Qg 7.3
Threshold Gate Charge Qg(th) 0.5
VGS=-4.5V, VDS=-10V, ID=-2.7A nC
Gate Source Charge Qgs 1.25
Gate Drain Charge Qgd 1.15
Turn-On DelayTime td(on) 8
Turn-On Rise Time tr VGS=-4.5V, VDS=-10V, 6.4
ns
Turn-Off DelayTime td(off) ID=-1.2A, RG=6Ω 41
Turn-Off Fall Time tf 7
Maximum Body-Diode Continuous Current IS -0.9 A
Diode Forward Voltage VSD IS=-0.9A,VGS=0V -1.5 V

■ Marking
Marking A1SHB

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SMD Type MOSFET

P-Channel MOSFET
WPM2015 (KPM2015)
■ Typical Characterisitics
10 5
o
VGS=-4.5V VGS=-4V V DS=-5V T=-50 C
-IDS-Drain to Source Current(A)

-IDS-Drain Source Current(A)

8 VGS=-3V 4
o
T=25 C

6 VGS=-2.5V
3 T=125 C
o

4 2

VGS=-1.5V

2 1

0 0
0.0 0.4 0.8 1.2 1.6 2.0
0.0 0.5 1.0 1.5 2.0
-V GS-Gate to Source Voltage(V)
-VDS-Drain to Source Voltage(V)

Output characteristics Transfer characteristics

160 280

140 240 ID=-2.7A

-RDS(ON)-On Resistance(m )

VGS=-1.8V
RDS(ON)-Reistance(m )

120 200

VGS=-2.5V
100 160

80 VGS=-4.5V
120

60 80

40 40
1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-IDS-Drain to Source Current(A) -VGS-Gate to Source Voltage(V)

On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage

140 1.0
VGS=-4.5V,ID=-2.7A
-VGS(th)-Gate Threshold Voltage(V)

ID=-250uA
120
RDS(ON)-On Resistance(m )

0.8
100

80 0.6

60
0.4

40

0.2
20 -50 0 50 100 150
-50 0 50 100 150 o
o Temperature( C)
Temperature( C)
On-Resistance vs. Junction temperature Threshold voltage vs. Temperature

3
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 SMD Type MOSFET

P-Channel MOSFET
WPM2015 (KPM2015)
■ Typical Characterisitics
800 5
o
F=1MHZ T=125 C

-ISD-Source to Drain Current(A)

700
Ciss
4
600
C-Capacitance(pF)

500 3 o
T=25 C
400

300 2

200
Coss 1
100
Crss
0 0
0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5
-VDS-Drain to Source Voltage(V) -VSD-Source to Drain Voltage(V)

Capacitance Body diode forward voltage

10 10 100 µs
Limitedby R DS(on)

8
1 ms
- ID - Drain Current (A)

1
6 10 ms
Power (W)

4 100 ms
0.1
1s
T A = 25 °C
10 s
2 T A = 25 °C Single Pulse
DC

B V DSS Limited
0 0.01
.
0.01 0.1 1 10 100 1000 0.1 1 10 100
-V DS - Drain-to-So
urce V oltage (V )
Time (s)

Single pulse power Safe operating power

4.5
ID=-2.7A
4.0
-VGS-Gate to Source Voltage

3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 2 4 6 8 10
Qg (nc)
Gate Charge Characteristics

4
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SMD Type MOSFET

P-Channel MOSFET
WPM2015 (KPM2015)
■ Typical Characterisitics

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 1 2 0 ° C / W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Transient thermal response (Junction-to-Ambient)

5
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