SMD Type IC

MOSFET

MOS Field Effect Transistor

6.50-0.15
+0.15
2.30-0.1
+0.1

+0.15
1.50-0.15
5.30-0.2
+0.2
0.50-0.7
+0.8

Features
Low on-state resistance

3.80
RDS(on)1 = 5.6 m MAX. (VGS = 10 V, ID = 32 A)

+0.15
5.55-0.15
+0.2
9.70-0.2
0.127

+0.15
0.50-0.15
Low Ciss: Ciss = 2050 pF TYP. 0.80-0.1
+0.1 max

5 V drive available

+0.25
2.65-0.1
+0.28
1.50-0.1
2.3 0.60-0.1
+0.1
1 Gate
4.60-0.15
+0.15

2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain to source voltage VDSS 25 V
Gate to source voltage VGSS 20 V
ID 64 A
Drain current
Idp * 256 A
Power dissipation TA=25 1.0
PD W
TC=25 36
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Drain cut-off current IDSS VDS=25V,VGS=0 10 A
Gate leakage current IGSS VGS= 20V,VDS=0 100 nA
Gate cut off voltage VGS(off) VDS=10V,ID=1mA 2.5 2.5 3.0 V
Forward transfer admittance Yfs VDS=10V,ID=16A 9.7 19 S
RDS(on)1 VGS=10V,ID=32A 4.5 5.6 mÙ
Drain to source on-state resistance
RDS(on)2 VGS=5.0V,ID=16A 6.8 13.7 mÙ
Input capacitance Ciss 2050 pF
Output capacitance Coss VDS=10V,VGS=0,f=1MHZ 460 pF
Reverse transfer capacitance Crss 330 pF
Turn-on delay time ton 16 ns
Rise time tr ID=32A,VGS(on)=10V,RG=10 19 ns
Turn-off delay time toff ,VDD=12.5V 53 ns
Fall time tf 22 ns
Total Gate Charge QG VDD = 20V 42 nC
Gate to Source Charge QGS VGS = 10 V 8 nC
ID =64A
Gate to Drain Charge QGD 15 nC
Body Diode Forward Voltage VF(S-D) IF = 64A, VGS = 0 V 0.97 V
Reverse Recovery Time trr IF = 64 A, VGS = 0 V 23 ns
Reverse Recovery Charge Qrr di/dt = 100 A/ ìs 11 nC

1
www.kexin.com.cn