SMD Type MOSFET

P-Channel MOSFET
AO3403 (KO3403)

SOT-23-3 Unit: mm
2.9 -0.1
+0.2

0.4 -0.1
+0.1

■ Features

0.4
3

● VDS (V) =-30V

+0.2
2.8 -0.1

+0.2
1.6 -0.1
● ID =-2.6 A (VGS =-10V)
● RDS(ON) ＜ 115mΩ (VGS =-10V)

0.55
1 2

● RDS(ON) ＜ 150mΩ (VGS =-4.5V) 0.15 -0.02

+0.02
0.95 -0.1
+0.1

1.9 -0.2
+0.1

● RDS(ON) ＜ 200mΩ (VGS =-2.5V)

+0.2
-0.1
1.1
D 1. Gate

+0.1
0.68 -0.1
2. Source

0-0.1
3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±12
Continuous Drain Current Ta = 25℃ -2.6
ID
Ta = 70℃ -2.2 A
Pulsed Drain Current IDM -13
Ta = 25℃ 1.4
Power Dissipation PD W
Ta = 70℃ 0.9
t ≤ 10s 90
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 125 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 80
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
AO3403 (KO3403)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-30V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.6 -1.4 V
VGS=-10V, ID=-2.6A 115
VGS=-10V, ID=-2.6A TJ=125℃ 200
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=-4.5V, ID=-2A 150
VGS=-2.5V, ID=-1A 200
On state drain current ID(ON) VGS=-10V, VDS=-5V -13 A
Forward Transconductance gFS VDS=-5V, ID=-2.6A 8 S
Input Capacitance Ciss 260 315
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 37 pF
Reverse Transfer Capacitance Crss 20
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 4 12 Ω
Total Gate Charge (10V) 5.9 7.2
Qg
Total Gate Charge (4.5V) 2.8 3.5
VGS= -10V, VDS=-15V, ID=-2.6A nC
Gate Source Charge Qgs 0.7
Gate Drain Charge Qgd 1
Turn-On DelayTime td(on) 6
Turn-On Rise Time tr VGS=-10V, VDS=-15V, 3.5
Turn-Off DelayTime td(off) RL=5.76Ω , RGEN=3Ω 20 ns
Turn-Off Fall Time tf 5
Body Diode Reverse Recovery Time trr 11.5 15
IF=-2.6A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr 4.5 nC
Maximum Body-Diode Continuous Current IS -1.5 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking
Marking A3*

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SMD Type MOSFET

P-Channel MOSFET
AO3403 (KO3403)
■ Typical Characterisitics

15 10
-10V -4.5V VDS=-5V

12 -3V 8
-6V

9 6
-2.5V
-ID (A)

-ID(A)
6 4 125°C

3 VGS=-2V 2 25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

210 2
190
VGS=-2.5V VGS=-10V
Normalized On-Resistance

1.8
170 ID=-2.6A
1.6
150
Ω)
RDS(ON) (mΩ

130 VGS=-4.5V 1.4 5

VGS=-4.5V
110 ID=-2A 2
1.2
90
1 VGS=-2.5V
70 VGS=-10V ID=-1A

50 0.8
0 1 2 3 4 5 6 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

250 1.0E+02
ID=-2.6A
1.0E+01
200
1.0E+00
125°C
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
-IS (A)

150
1.0E-02 25°C

1.0E-03
100 25°C
1.0E-04

50 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 SMD Type MOSFET

P-Channel MOSFET
AO3403 (KO3403)
■ Typical Characterisitics

10 400
VDS=-15V
ID=-2.6A
8
300 Ciss

Capacitance (pF)
6
-VGS (Volts)

200
4

100 Coss
2

Crss
0 0
0 1 2 4 5 6 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25°C

10.0 1000
10µs
Power (W)

RDS(ON)
-ID (Amps)

100µs
1.0 limited 100
1ms
10ms
10
0.1 TJ(Max)=150°C
TA=25°C 10s
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area Ambient

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=125°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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