SMD Type IC

MOSFET

MOS Field Effect Transistor

2SJ601

TO-252
Features Unit: mm

6.50-0.15
+0.15
2.30-0.1
+0.1

+0.15
1.50-0.15
Low on-resistance 5.30-0.2
+0.2
0.50-0.7
+0.8

RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A)

RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A)

3.80
+0.15
5.55-0.15
+0.2
9.70-0.2
Low Ciss: Ciss = 3300 pF TYP. 0.127

+0.15
0.50-0.15
0.80-0.1
+0.1 max

Built-in gate protection diode

+0.25
2.65-0.1
+0.28
1.50-0.1
1 Gate
2.3 0.60-0.1
+0.1

2 Drain
4.60-0.15
+0.15

3 Source

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit
Drain to source voltage VDSS -60 V
Gate to source voltage VGSS 20 V
Drain current (DC) ID 36 A
Drain current(pulse) * ID 120 A
Power dissipation TC=25 PD 65 W
TA=25 PD 1.0 W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
* PW 10 s, duty cycle 1%

1
www.kexin.com.cn

Free Datasheet http://www.datasheet4u.co

 SMD Type MOSFET
IC

2SJ601

Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Drain cut-off current IDSS VDS=-60V,VGS=0 -10 A
Gate leakage current IGSS VGS= 20V,VDS=0 10 A
Gate to source cutoff voltage VGS(off) VDS=-10V,ID=-1mA 1.5 2.0 2.5 V
Forward transfer admittance Yfs VDS=-10V,ID=-18A 10 30 S
VGS=-10V,ID=-18A 25 31 m
Drain to source on-state resistance RDS(on)
VGS=-4.0V,ID=-18A 32 46 m
Input capacitance Ciss 3300 pF
Output capacitance Coss VDS=-10V,VGS=0,f=1MHZ 580 pF
Reverse transfer capacitance Crss 230 pF
Turn-on delay time td(on) 11 ns
Rise time tr VGS(on)=-30V,ID=--18A ,VDD=-10V,RG=0 12 ns
Turn-off delay time td(off) 80 ns
Fall time tf 53 ns
Total Gate Charge QG ID = -36A 63 nC
Gate to Source Charge QGS VDD= -48 V 10 nC
Gate to Drain Charge QGD VGS =-10 V 16 nC
Body Diode Forward Voltage VF(S-D) IF = -36A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = -36 A, VGS = 0 V 52 ns
Reverse Recovery Charge Qrr di/dt = 100 A / s 108 nC

2
www.kexin.com.cn

Free Datasheet http://www.datasheet4u.com/