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    Tutorial 2 EDC

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    subedisaurav223

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    © All Rights Reserved
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    Tutorial 2 EDC

    Uploaded by

    subedisaurav223
    3 views3 pages

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    3 views3 pages

    Tutorial 2 EDC

    Uploaded by

    subedisaurav223

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 3

    Tutorial 2 [Chapter 2.

    Bipolar Junction Transistor]


    1. Explain the input and output characteristics of npn BJT in CB and CE configurations.
    2. What is transistor biasing? Explain the types of biasing circuits.
    3. Write down the steps to draw AC and DC equivalent circuits.
    4. Explain the operation of transistor as a switch in cut-off and saturation.
    5. Explain the operation of transistor as an amplifier.
    6. Explain the Ebers-Moll Model, hybrid-π model and T-model for BJT.
    7. Compare CB, CE and CC amplifiers in terms of input impedance, output impedance, voltage gain
    and current gain and application.
    8. Explain the significance of bypass capacitor and coupling capacitors in amplifier circuits.
    9. Why voltage divider biasing is called β-independent biasing method?
    10. Define transconductance. Derive gm for BJT.
    11. Why common collector amplifier is called emitter follower? Draw the common collector transistor amplifier circuit and
    find its input impedance, output impedance, voltage gain and current gain.
    12. Derive the expressions for input impedance, output impedance, voltage gain and current gain for BJT common base
    amplifier.
    13. Draw the small signal model for common emitter amplifier and find its input and output resistances and voltage gain.
    14. Derive an expression to find the input resistance, output resistance, voltage gain and current gain for emitter unbypassed
    common emitter amplifier circuit.
    15. Determine the input resistance, output resistance, and overall voltage gain for the circuit given below:

    Ans: Rin ≈ 8.25 kΩ, Av = -0.009545473, AVs = 0.008618


    16. For the figure shown below with β = 110, find
    a. Input impedance
    b. Output Impedance
    c. Voltage gain
    d. Current Gain

    Ans: Rin = 59.77kΩ, AV = - 3.5 around, Ai = - 104.598

    17. For the circuit shown below find IB, IC, Rin, Rout, and AV.

    Ans: Rin = 1.08 kΩ ,Rout = 4.012 kΩ ,AV = - 367.29

    18. Derive expression for Ai, Rin and Rout.


    19. Design voltage divider biased common emitter BJT amplifier to get voltage gain of -90. Assume
    β=100 and VCC = +12 V. (Ans; IC = 1 mA(assumption), ∴ RC = 2.32 kΩ, RE = 3.27 kΩ, Taking R2 = 10 kΩ R1 = 20
    kΩ)
    20. Design β-independent type dc biased common collector amplifier and find its current gain and
    input resistance. Given parameters are: VCC = 20 V, IC = 2 mA, β = 100. Use firm biasing
    method. (RE = 0.99 ≈ 1kΩ, RC = 4 kΩ, or, R2 =11.57 kΩ ,R1 = 6.35, Rin = 9.105299 kΩ
    ,Rout = 0.012706 kΩ ,AV = 1 , Ai = 716.61)
    21. Design β-independent type dc biased common emitter amplifier circuit. Given parameters are:
    VCC = 24 V, IC = 1.5 mA, β = 150 and input impedance is comparatively large. Use appropriate
    guideline to support your design. Also determine its voltage gain. (R2 = 11.48 kΩ , R1 = 77.37 kΩ, Rin =
    9.6 kΩ)
    22. Design a common base amplifier using β-independent dc biasing method. Use appropriate
    guideline to support your design. Given parameters are: VCC = 24 V, IC = 3 mA, β = 100. Also
    find its voltage gain and current gain using its ac equivalent circuit. (Ans: R2 = 0.92 kΩ,R1 = 6.15 kΩ ,
    (Rin) = 0.00848 kΩ,(Rout) = RC = 3.2 kΩ ,(AV)= 369.22 ,(Ai) = 0.978 ≈ 1)
    23. Design voltage divider bias (common emitter configuration) to get ICQ = 1.5 mA. Assume power
    supply voltage VCC = 15 V and beta of the transistor is 110. (Ans: R2 = 1.29 kΩ ,R1 = 7.47 kΩ )

    Submission Deadline: 2081/04/01

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