2SC1213, 2SC1213A: Silicon NPN Epitaxial
2SC1213, 2SC1213A: Silicon NPN Epitaxial
2SC1213, 2SC1213A: Silicon NPN Epitaxial
Application
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1213, 2SC1213A
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Electrical Characteristics (Ta = 25°C)
2SC1213 2SC1213A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 35 — — 50 — — V I C = 10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 35 — — 50 — — V I C = 1 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 4 — — 4 — — V I E = 10 µA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — 0.5 — — 0.5 µA VCB = 20 V, IE = 0
1
DC current tarnsfer ratio hFE* 60 — 320 60 — 320 VCE = 3 V, IC =10 mA
hFE 10 — — 10 — — VCE = 3 V,
I C = 500 mA*2
Collector to emitter VCE(sat) — 0.2 0.6 — 0.2 0.6 V I C = 150 mA,
saturation voltage I B = 15 mA*2
Base to emitter voltage VBE — 0.64 — — 0.64 — V VCE = 3 V, IC = 10 mA
Notes: 1. The 2SC1213 and 2SC1213A are grouped by h FE as follows.
2. Pulse test
B C D
60 to 120 100 to 200 160 to 320
2
2SC1213, 2SC1213A
0.8
0.4
40
200 0.3
20 0.2
0.1 mA
IB = 0
0 50 100 150 0 2 4 6 8 10
Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)
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6
Collector Current IC (mA)
400 10
5
4
3
300
3 Ta = 75°C
–25
25
2
200
1.0
1 mA
100
PC = 400
mW
IB = 0
0.3
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V)
3
2SC1213, 2SC1213A
DC Current Transfer Ratio vs.
Collector Current
140
VCE = 3 V
80
60
40
20
0
2 5 10 20 50 100 200 500
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Collector Current IC (mA)
4
Unit: mm
5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.7
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1.27
2.54