UMZ1NT1G

Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
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Features
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200X400 (6) (5) (4)

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: 3A Q1 Q2
ESD Rating − Machine Model: C
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 (1) (2) (3)
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS (TA = 25°C) 1

SC−88
Rating Symbol Value Unit
CASE 419B
Collector−Base Voltage V(BR)CBO 60 Vdc
Collector−Emitter Voltage V(BR)CEO 50 Vdc
MARKING DIAGRAM
Emitter−Base Voltage V(BR)EBO 7.0 Vdc
Collector Current − Continuous IC 200 mAdc
THERMAL CHARACTERISTICS 3Z MG
G
Characteristic
(One Junction Heated) Symbol Max Unit 1
Total Device Dissipation PD 187 (Note 1) mW
TA = 25°C 256 (Note 2) 3Z = Device Code
Derate above 25°C 1.5 (Note 1) mW/°C M = Date Code
2.0 (Note 2) G = Pb−Free Package
Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1) °C/W (Note: Microdot may be in either location)
490 (Note 2)

Characteristic
(Both Junctions Heated) Symbol Max Unit ORDERING INFORMATION
Total Device Dissipation PD 250 (Note 1) mW
Device Package Shipping†
TA = 25°C 385 (Note 2)
Derate above 25°C 2.0 (Note 1) mW/°C UMZ1NT1G SC−88 3000 /
3.0 (Note 2) (Pb−Free) Tape & Reel
Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1) °C/W NSVUMZ1NT1G SC−88 3000 /
325 (Note 2)
(Pb−Free) Tape & Reel
Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) °C/W
208 (Note 2) †For information on tape and reel specifications,
including part orientation and tape sizes, please
Junction and Storage Temperature TJ, Tstg −55 to +150 °C refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad

© Semiconductor Components Industries, LLC, 2010 Publication Order Number:

September, 2016 − Rev. 9 UMZ1NT1/D
 UMZ1NT1G

Q1: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage V(BR)CEO 50 − − Vdc
(IC = 2.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage V(BR)CBO 60 − − Vdc

(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage V(BR)EBO 7.0 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current ICBO − − 0.1 mAdc
(VCB = 45 Vdc, IE = 0)

Collector−Emitter Cutoff Current ICEO

(VCE = 10 Vdc, IB = 0) − − 0.1 mAdc
(VCE = 30 Vdc, IB = 0) − − 2.0 mAdc
(VCE = 30 Vdc, IB = 0, TA = 80°C) − − 1.0 mAdc
DC Current Gain (Note 3) hFE − −
(VCE = 6.0 Vdc, IC = 2.0 mAdc) 200 400

Collector−Emitter Saturation Voltage VCE(sat) − − 0.25 Vdc

(IC = 100 mAdc, IB = 10 mAdc)

Transistor Frequency fT − 114 − MHz

3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

Q2: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage V(BR)CEO −50 − − Vdc
(IC = 2.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage V(BR)CBO −60 − − Vdc

(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage V(BR)EBO −7.0 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current ICBO − − −0.1 mAdc
(VCB = 45 Vdc, IE = 0)

Collector−Emitter Cutoff Current ICEO

(VCE = 10 Vdc, IB = 0) − − −0.1 mAdc
(VCE = 30 Vdc, IB = 0) − − −2.0 mAdc
(VCE = 30 Vdc, IB = 0, TA = 80°C) − − −1.0 mAdc
DC Current Gain (Note 3) hFE − −
(VCE = 6.0 Vdc, IC = 2.0 mAdc) 200 400

Collector−Emitter Saturation Voltage VCE(sat) − − −0.3 Vdc

(IC = 100 mAdc, IB = 10 mAdc)

Transistor Frequency fT − 142 − MHz

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TYPICAL ELECTRICAL CHARACTERISTICS: PNP TRANSISTOR

−200 1000
−2.0 mA −1.5 mA
IC, COLLECTOR CURRENT (mA)

−160

hFE, DC CURRENT GAIN

−1.0 mA TA = 100°C

−120 25°C −25°C

−0.5 mA
100
−80
IB = −0.2 mA
−40
TA = 25°C VCE = −1.0 V
0 10
0 −1 −2 −3 −4 −5 −6 −1 −10 −100 −1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region Figure 2. DC Current Gain

1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) −1

IC/IB = 10
TA = 100°C
hFE, DC CURRENT GAIN

TA = 100°C

25°C −25°C 25°C −25°C

100 −0.1

VCE = −6.0 V
10 −0.01
−1 −10 −100 −1000 −1 −10 −100 −1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC

−10 −10,000
COMMON EMITTER 25°C
BASE−EMITTER SATURATION

VCE = 6 V TA = 100°C
−1000
IB, BASE CURRENT (mA)

−25°C
VOLTAGE (V)

−100
−1
−10

−1
TA = 25°C
IC/IB = 10
−0.1 −0.1
−1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage

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TYPICAL ELECTRICAL CHARACTERISTICS: NPN TRANSISTOR

280 1000
6.0 mA 3.0 mA 2.0 mA
IC, COLLECTOR CURRENT (mA)

240 5.0 mA
TA = 100°C

hFE, DC CURRENT GAIN

200 25°C
1.0 mA −25°C
160
100
120 0.5 mA

80
IB = 0.2 mA
40
TA = 25°C VCE = 1.0 V
0 10
0 1 2 3 4 5 6 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Voltage Figure 8. DC Current Gain

1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE 1

IC/IB = 10
TA = 100°C
hFE, DC CURRENT GAIN

25°C
−25°C
TA = 100°C
25°C
(V)

100 0.1 −25°C

VCE = 6.0 V
10 0.01
1 10 100 1000 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC

10 10,000
COMMON EMITTER
25°C
BASE−EMITTER SATURATION

VCE = 6 V TA = 100°C
1000
IB, BASE CURRENT (mA)

−25°C
VOLTAGE (V)

100
1
10

1
TA = 25°C
IC/IB = 10
0.1 0.1
1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage

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PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
NOTES:
D H 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
D PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
GAGE
PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
6 5 4 THE PLASTIC BODY AND DATUM H.
L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.
L2 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
E E1 LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
DETAIL A 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
1 2 3
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
2X 3 TIPS RADIUS OF THE FOOT.
bbb H D
e MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
B 6X b A −−− −−− 1.10 −−− −−− 0.043
ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004
TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039
b 0.15 0.20 0.25 0.006 0.008 0.010
C 0.08 0.15 0.22 0.003 0.006 0.009
A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086
E 2.00 2.10 2.20 0.078 0.082 0.086
A E1 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC 0.026 BSC
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
6X ccc C ccc 0.10 0.004
A1 ddd 0.10 0.004
SEATING c
C PLANE
SIDE VIEW END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X 6X
0.30 0.66

2.50

0.65
PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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