MMBT589LT1G,

NSVMMBT589LT1G

High Current Surface Mount

PNP Silicon Switching
Transistor for Load
Management in www.onsemi.com

Portable Applications 30 VOLTS, 2.0 AMPS

PNP TRANSISTORS
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOT−23 (TO−236)
Compliant CASE 318
STYLE 6
MAXIMUM RATINGS (TA = 25°C) COLLECTOR
Rating Symbol Value Unit 3
Collector −Emitter Voltage VCEO −30 Vdc
1
Collector −Base Voltage VCBO −50 Vdc BASE
Emitter −Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC −1.0 Adc 2
EMITTER
Collector Current − Peak ICM −2.0 A

THERMAL CHARACTERISTICS MARKING DIAGRAM

Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, PD G3 M G
(Note 1) TA = 25°C 310 mW G
Derate above 25°C 2.5 mW/°C
1
Thermal Resistance RqJA °C/W
Junction−to−Ambient (Note 1) 403 G3 = Device Code
M = Date Code*
Total Device Dissipation Alumina PD
Substrate, (Note 2) TA = 25°C 710 mW G = Pb−Free Package
Derate above 25°C 5.7 mW/°C (Note: Microdot may be in either location)
Thermal Resistance RqJA °C/W *Date Code orientation and/or overbar may
Junction−to−Ambient (Note 2) 176 vary depending upon manufacturing location.

Total Device Dissipation (Ref. Figure 8) PDsingle

(Single Pulse < 10 sec.) 575 mW ORDERING INFORMATION

Junction and Storage Temperature TJ, Tstg −55 to +150 °C Device Package Shipping†

Stresses exceeding those listed in the Maximum Ratings table may damage the MMBT589LT1G SOT−23 3,000 /
device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel
assumed, damage may occur and reliability may be affected. NSVMMBT589LT1G SOT−23 3,000 /
1. FR− 4 @ Minimum Pad (Pb−Free) Tape & Reel
2. FR− 4 @ 1.0 X 1.0 inch Pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1998 1 Publication Order Number:

October, 2016 − Rev. 7 MMBT589LT1/D
 MMBT589LT1G, NSVMMBT589LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO | Vdc
(IC = −10 mAdc, IB = 0) −30 −

Collector −Base Breakdown Voltage V(BR)CBO Vdc

(IC = −0.1 mAdc, IE = 0) −50 −

Emitter −Base Breakdown Voltage V(BR)EBO Vdc

(IE = −0.1 mAdc, IC = 0) −5.0 −

Collector Cutoff Current ICBO mAdc

(VCB = −30 Vdc, IE = 0) − −0.1

Collector−Emitter Cutoff Current ICES mAdc

(VCES = −30 Vdc) − −0.1

Emitter Cutoff Current IEBO mAdc

(VEB = −4.0 Vdc) − −0.1

ON CHARACTERISTICS
DC Current Gain (Note 3) (Figure 1) hFE −
(IC = −1.0 mA, VCE = −2.0 V) 100 −
(IC = −500 mA, VCE = −2.0 V) 100 300
(IC = −1.0 A, VCE = −2.0 V) 80 −
(IC = 2.0 A, VCE = −2.0 V) 40 −
Collector −Emitter Saturation Voltage (Note 3) (Figure 3) VCE(sat) V
(IC = −0.5 A, IB = −0.05 A) − −0.25
(IC = −1.0 A, IB = 0.1 A) − −0.30
(IC = −2.0 A, IB = −0.2 A) − −0.65
Base −Emitter Saturation Voltage (Note 3) (Figure 2) VBE(sat) V
(IC = −1.0 A, IB = −0.1 A) − −1.2

Base −Emitter Turn−on Voltage (Note 3) VBE(on) V

(IC = −1.0 A, VCE = −2.0 V) − −1.1

Cutoff Frequency fT MHz

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz) 100 −

Output Capacitance Cobo pF

(f = 1.0 MHz) − 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

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 MMBT589LT1G, NSVMMBT589LT1G

200 230
VCE = -1.0 V
VCE = -2.0 V 210 125°C

150 190

h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN

170

150
100 25°C
130
110
50
90
-55°C
70
0 50
0.001 0.01 0.1 1.0 10 1.0 10 100 1000
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain versus Figure 2. DC Current Gain versus

Collector Current Collector Current

1.0 1.0

VBE(sat) , BASE EMITTER SATURATION

0.9 0.95
0.8 VBE(sat) 0.9 IC/IB = 10
V, VOLTAGE (VOLTS)

0.7 0.85
VOLTAGE (VOLTS)

VBE(on)
0.6 0.8
0.5 0.75
IC/IB = 100
0.4 0.7
0.3 0.65
0.2 0.6
0.1 VCE(sat) 0.55
0 0.5
1.0 10 100 1000 0.001 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (AMPS)

Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage

versus Collector Current

1.0 1.8
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE(sat) , COLLECTOR EMITTER SATURATION

1.6
0.8 1.4 IC/IB = 100

1.2
VOLTAGE (VOLTS)

0.6
1.0
1000 mA
0.8
0.4
100 mA 0.6
IC/IB = 10
0.2 0.4
50 mA
10 mA 0.2
0 0
0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 10
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector Emitter Saturation Voltage Figure 6. Collector Emitter Saturation Voltage
versus Collector Current versus Collector Current

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 MMBT589LT1G, NSVMMBT589LT1G

10
SINGLE PULSE TEST AT Tamb = 25°C

IC , COLLECTOR CURRENT (AMPS)

1s 100 ms 10 ms 1 ms 100 ms
1.0

2s

0.1

0.01
0.1 1.0 10 100
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

Figure 7. Safe Operating Area

0.5 0.2 0.1

1.0E+00

0.05
0.02
1.0E-01
D = 0.01
Rthja , (t)

1.0E-02

r(t)

1.0E-03
1E-05 0.0001 0.001 0.01 0.1 1.0 10 100 1000
t, TIME (sec)

Figure 8. Normalized Thermal Response

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1

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