TPC8122

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPC8122
Lithium Ion Battery Applications
Notebook PC Applications Unit: mm

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 30S (typ.)
• Low leakage current: IDSS = −10μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS −30 V

Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID −12
Drain current A
Pulse (Note 1) IDP −48
Drain power dissipation (t = 10 s) JEDEC ⎯
PD 1.9 W
(Note 2a)
JEITA ⎯
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b) TOSHIBA 2-6J1B
Single pulse avalanche energy
EAS 93 mJ Weight: 0.080 g (typ.)
(Note 3)
Avalanche current IAR −12 A
Repetitive avalanche energy
EAR 0.030 mJ
(Note 2a) (Note 4)
Circuit Configuration
Channel temperature Tch 150 °C
8 7 6 5
Storage temperature range Tstg −55 to 150 °C

Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating 1 2 3 4
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8122 Part No. (or abbreviation code)

Lot No.
(weekly code)

A line indicates
Lead(Pb)-Free Finish

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2:

(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L =500μH, RG = 25 Ω, IAR = −12 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture
(The last digit of a year)

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 TPC8122
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = −10 mA, VGS = 20 V −13 ⎯ ⎯
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −6 A ⎯ 11.5 16.5
Drain-source ON resistance RDS (ON) mΩ
VGS = −10 V, ID = −6 A ⎯ 6.3 8
Forward transfer admittance |Yfs| VDS = −10 V, ID = −6 A 15 30 ⎯ S
Input capacitance Ciss ⎯ 2450 ⎯
Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 530 ⎯ pF

Output capacitance Coss ⎯ 740 ⎯

Rise time tr 0V ⎯ 12 ⎯
ID = −6 A
VGS
−10 V VOUT
Turn-ON time ton ⎯ 22 ⎯

RL = 2.5Ω
Switching time 4.7 Ω ns
Fall time tf ⎯ 150 ⎯

VDD ≈ −15 V
Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 360 ⎯

Total gate charge

Qg ⎯ 62 ⎯
(gate-source plus gate-drain)
VDD ≈ −24 V, VGS = −10 V,
nC
Gate-source charge 1 Qgs1 ID = −12 A ⎯ 10 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 19 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −48 A
current
Forward voltage (diode) VDSF IDR = −12 A, VGS = 0 V ⎯ ⎯ 1.2 V

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 TPC8122

ID – VDS ID – VDS
−25 −50
−3.4 −4 −3.8 −3.6
−5 −3.2 −5 −3.4
−6 −3.6 −6
−20 −3.8 −3 −40 −8 −4.5 Common source
−8 Ta = 25°C

(A)
−4
(A)

−10 −4.2 −10 Pulse test

−4.5

ID
ID

−15 −30 −3.2

Drain current
Drain current

−2.8

−10 −20 −3

VGS = −2.6 V
−2.8
−5 −10
Common source
Ta = 25°C VGS = −2.6V
Pulse test
0 0
0 −0.2 −0.4 −0.6 −0.8 −1 0 −0.4 −0.8 −1.2 −1.6 −2

Drain−source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

−50 −0.5
Common source Common source
VDS = −10 V Ta = 25°C
VDS (V)

Pulse test Pulse test

−40 −0.4
(A)
ID

−30 −0.3
Drain−source voltage
Drain current

−20 −0.2

Ta = 100°C

ID = −12 A
−10 25°C −0.1
−55°C −6
−3

0 0
0 −1 −2 −3 −4 −5 0 −2 −4 −6 −8 −10

Gate−source voltage VGS (V) Gate−source voltage VGS (V)

|Yfs| – ID RDS (ON) – ID

100 100
Common source
Ta = 25°C
Pulse test
Drain−source ON resistance
Forward transfer admittance

Ta = −55°C
25
RDS (ON) (mΩ)

10
100
VGS = −4V
|Yfs| (S)

10

1 −10

Common source
VDS = −10 V
Pulse test
0.1 1
−0.1 −1 −10 −100 −0.1 −1 −10 −100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Ta IDR – VDS

20 −100
Common source −10 −4
Pulse test

(A)
−3
Drain-source ON resistance

16

IDR
RDS (ON) (mΩ)

−10
ID = −3, −6, −12A

Drain reverse current

12
VGS = −4 V −1
VGS = 0 V
8
ID = −3, −6, −12A −1

4 VGS = −10 V
Common source
Ta = 25°C
Pulse test
0 −0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0

Ambient temperature Ta (°C) Drain−source voltage VDS (V)

Capacitance – VDS Vth – Ta

10000 −2.0
Vth (V)

−1.6
(pF)

Ciss
Gate threshold voltage

−1.2
C
Capacitance

1000

−0.8
Coss
Crss Common source
Common source −0.4 VDS = −10 V
VGS = 0 V ID = −1mA
f = 1 MHz Pulse test
Ta = 25°C
100 0
−0.1 −1 −10 −100 −80 −40 0 40 80 120 160

Drain−source voltage VDS (V) Ambient temperature Ta (°C)

Dynamic input/output
PD – Ta characteristics
2 −30 −30
(1) Device mounted on a glass-epoxy Common source
board (a)(Note 2a)
ID = −12 A
(W)

(1)
VDS (V)

(2) Device mounted on a glass-epoxy

(V)

VDD = −24V Ta = 25°C

board (b)(Note 2b) −25 −25
1.6 t = 10 s Pulse test
PD

VGS

−20 VDS −20

Drain power dissipation

1.2
Drain−source voltage

Gate−source voltage

VGS
−15 −6 −15
(2) −12 −12
0.8
−10 VDD = −24V −10

−6
0.4
−5 −5

0 0 0
0 40 80 120 160 0 20 40 60 80 100

Ambient temperature Ta (°C) Total gate charge Qg (nC)

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rth − tw
1000
(1)Device mounted on a glass-epoxy board (a)(Note 2a)
Transient thermal impedance (2)Device mounted on a glass-epoxy board (b)(Note 2b) (2)

(1)
100
rth (°C/W)

10

Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe operating area

−1000

−100
(A)

ID max (Pulse) * 1 ms *
ID

t = 10 ms *
Drain current

−10

−1
* Single pulse
Ta = 25°C
Curves must be erated
linearly with increase in
temperature. VDSS max
−0.1
−0.1 −1 −10 −100

Drain−source voltage VDS (V)

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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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