2SC5200N

Bipolar Transistors Silicon NPN Triple-Diffused Type

2SC5200N
1. Applications
• Power Amplifiers

2. Features
(1) High collector voltage: VCEO = 230 V (min)
(2) Complementary to 2SA1943N
(3) Recommended for 100-W high-fidelity audio frequency amplifier output stage

3. Packaging and Internal Circuit

1. Base
2. Collector (Heatsink)
3. Emitter

TO-3P(N)

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25)

25
Characteristics Symbol Rating Unit

Collector-base voltage VCBO 230 V

Collector-emitter voltage VCEO 230
Emitter-base voltage VEBO 5
Collector current (DC) (Note 1) IC 15 A
Base current IB 1.5
Collector power dissipation PC 150 W
Junction temperature Tj 150 
Storage temperature Tstg -55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.

5. Thermal Characteristics
Characteristics Symbol Max Unit

Junction-to-case thermal resistance Rth(j-c) 0.83 /W

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6. Electrical Characteristics
6.1. Static Characteristics (Unless otherwise specified, Tc = 25)
25
Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 230 V, IE = 0 A   5.0 µA

Emitter cut-off current IEBO VEB = 5 V, IC = 0 A   5.0
Collector-emitter breakdown voltage V(BR)CEO IC = 50 mA, IB = 0 A 230   V
DC current gain hFE(1) VCE = 5 V, IC = 1 A 80  160 
hFE(2) VCE = 5 V, IC = 7 A 35  
Collector-emitter saturation voltage VCE(sat) IC = 8 A, IB = 0.8 A  0.4 3.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 7 A  0.9 1.5

6.2. Dynamic Characteristics (Unless otherwise specified, Tc = 25)

25
Characteristics Symbol Test Condition Min Typ. Max Unit

Transition frequency fT VCE = 5 V, IC = 1 A  30  MHz

Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz  200  pF

7. Marking (Note)

Fig. 7.1 Marking

Note: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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8. Characteristics Curves (Note)

Fig. 8.1 IC - VCE Fig. 8.2 hFE - IC

Fig. 8.3 VCE(sat) - IC Fig. 8.4 IC - VBE

Fig. 8.5 rth(j-c) - tw

(Guaranteed Maximum)

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Fig. 8.6 Safe Operating Area

(Guaranteed Maximum)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.

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Package Dimensions
Unit: mm

Weight: 4.6 g (typ.)

Package Name(s)

TOSHIBA: 2-16C1S
Nickname: TO-3P(N)

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
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applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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