MMBT4401L, SMMBT4401L

Switching Transistor
NPN Silicon

Features
• S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable COLLECTOR
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE

MAXIMUM RATINGS
2
Rating Symbol Value Unit EMITTER
Collector −Emitter Voltage VCEO 40 Vdc

Collector −Base Voltage VCBO 60 Vdc

3
Emitter −Base Voltage VEBO 6.0 Vdc SOT−23 (TO−236)
CASE 318
Collector Current − Continuous IC 600 mAdc 1 STYLE 6
Collector Current − Peak ICM 900 mAdc 2

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING DIAGRAM
Total Device Dissipation FR− 5 Board PD
(Note 1) @TA = 25°C 225 mW
Derate above 25°C 1.8 mW/°C 2X M G
G
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
1
Total Device Dissipation Alumina PD
Substrate (Note 2) @TA = 25°C 300 mW 2X = Specific Device Code
Derate above 25°C 2.4 mW/°C M = Date Code*
G = Pb−Free Package
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
(Note: Microdot may be in either location)
Junction and Storage Temperature TJ, Tstg −55 to +150 °C *Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION

Device Package Shipping†

MMBT4401LT1G SOT−23 3000 / Tape &
SMMBT4401LT1G (Pb−Free) Reel
MMBT4401LT3G SOT−23 10,000 / Tape &
(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1994 1 Publication Order Number:

October, 2016 − Rev. 11 MMBT4401LT1/D
 MMBT4401L, SMMBT4401L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 − −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 80 −
(IC = 150 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc) 40 −

Collector −Emitter Saturation Voltage VCE(sat) Vdc

(IC = 150 mAdc, IB = 15 mAdc) − 0.4
(IC = 500 mAdc, IB = 50 mAdc) − 0.75
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95
(IC = 500 mAdc, IB = 50 mAdc) − 1.2
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4
Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc, td − 15
ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225
ns
Fall Time IB1 = IB2 = 15 mAdc) tf − 30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V +30 V

1.0 to 100 ms, 1.0 to 100 ms, 200 W

200 W +16 V
+16 V DUTY CYCLE ≈ 2.0% DUTY CYCLE ≈ 2.0%
0
0
1.0 kW -14 V 1.0 kW CS* < 10 pF
-2.0 V CS* < 10 pF
< 2.0 ns < 20 ns

Scope rise time < 4.0 ns -4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn−On Time Figure 2. Turn−Off Time

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 MMBT4401L, SMMBT4401L

TRANSIENT CHARACTERISTICS
25°C 100°C

10
7.0
VCC = 30 V
5.0
IC/IB = 10
3.0
QT

Q, CHARGE (nC)
2.0

1.0
0.7
0.5

0.3
0.2 QA

0.1
10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 3. Charge Data

100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 30 tf
t, TIME (ns)

t, TIME (ns)

tr @ VCC = 10 V
td @ VEB = 2.0 V
20 td @ VEB = 0 20

10 10

7.0 7.0

5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. Turn−On Time Figure 5. Rise and Fall Times

300 100
ts′ = ts - 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
t s′, STORAGE TIME (ns)

t f , FALL TIME (ns)

30
100
20 IC/IB = 10
70

50 10

7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. Storage Time Figure 7. Fall Time

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 MMBT4401L, SMMBT4401L

SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE

VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

10 10
IC = 1.0 mA, RS = 150 W f = 1.0 kHz
IC = 500 mA, RS = 200 W RS = OPTIMUM
8.0 8.0
IC = 100 mA, RS = 2.0 kW RS = SOURCE IC = 50 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 50 mA, RS = 4.0 kW RS = RESISTANCE IC = 100 mA
6.0 6.0 IC = 500 mA
IC = 1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects Figure 9. Source Resistance Effects

h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
50k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
hie , INPUT IMPEDANCE (OHMS)

20k

10k

5.0k

2.0k

1.0k

500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Impedance
10 100
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
hoe, OUTPUT ADMITTANCE (m mhos)

5.0 50
MMBT4401LT1 UNIT 1
3.0 MMBT4401LT1 UNIT 2
20
2.0
10
1.0 MMBT4401LT1 UNIT 1
0.7 5.0 MMBT4401LT1 UNIT 2
0.5
2.0
0.3

0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Voltage Feedback Ratio Figure 12. Output Admittance

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 MMBT4401L, SMMBT4401L

STATIC CHARACTERISTICS
500
450 VCE = 5.0 V
TJ = 150°C VCE = 2.0 V
400 VCE = 1.0 V
h FE, DC CURRENT GAIN

350
25°C
300
250
200
-55°C
150
100
50
0
0.01 0.1 1
IC, COLLECTOR CURRENT (A)

Figure 13. DC Current Gain

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.2

1.0

0.8
IC = 1.0 mA 10 mA 100 mA 300 mA 500 mA
0.6

0.4

0.2

0
0.001 0.01 0.1 1 10 100
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.35 +0.5
IC/IB = 10
0.30 0 qVC for VCE(sat)
COEFFICIENT (mV/ °C)

0.25
150°C -0.5
0.20
-1.0
0.15 25°C
-1.5
0.10
-55°C
-2.0 qVB for VBE
0.05

0 -2.5
0.0001 0.001 0.01 0.1 1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)

Figure 15. Collector−Emitter Saturation Figure 16. Temperature Coefficients

Voltage vs. Collector Current

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 MMBT4401L, SMMBT4401L

STATIC CHARACTERISTICS

1.1 1.0
IC/IB = 10

VBE(on), BASE−EMITTER TURN ON

VBE(sat), BASE−EMITTER SATURA-

VCE = 2.0 V
1.0 0.9

0.9 −55°C
TION VOLTAGE (V)

0.8

VOLTAGE (V)
0.8 −55°C
0.7
0.7 25°C
25°C 0.6
0.6
0.5
0.5

0.4 150°C 0.4

150°C
0.3 0.3
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 17. Base−Emitter Saturation Voltage vs. Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current Collector Current

21 8.5

Cobo, OUTPUT CAPACITANCE (pF)

Cibo, INPUT CAPACITANCE (pF)

19 7.5

6.5
17
5.5
15
4.5
13
3.5

11 2.5

9 1.5
0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 45 50
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base Figure 20. Output Capacitance vs. Collector
Voltage Base Voltage

1 1000
fT, CURRENT−GAIN−BANDWIDTH (MHz)

VCE = 1.0 V
IC, COLLECTOR CURRENT (A)

10 msec TA = 25°C

1 sec
0.1

100

0.01

0.001 10
1 10 100 0.1 1 10 100 1000
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product

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 MMBT4401L, SMMBT4401L

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AR

D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c STYLE 6:
PIN 1. BASE
END VIEW 2. EMITTER
3. COLLECTOR

RECOMMENDED
SOLDERING FOOTPRINT*

3X
2.90 0.90

3X 0.80 0.95
PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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