MITSUBISHI <INTELLIGENT POWER MODULES>

PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

PM300DV1A120
FEATURE

a) Adopting new 5th generation Full-Gate

CSTBTTM chip
b) The over-temperature protection which
detects the chip surface temperature of
CSTBTTM is adopted.
c) Error output signal is possible from all
each protection upper and lower arm of IPM.
d) Compatible V-series package.

• Monolithic gate drive & protection logic

• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage.

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

C1

VCC TjA
VP1
TjK
CPI IN IGBT FWDi
OUT AMP

FPO Fo SINK

NC SC
GND
V PC C2E1

VCC TjA
V N1
TjK
CNI IN IGBT FWDi
OUT AMP

FNO Fo SINK

NC SC
GND
V NC
E2

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Conditions Ratings Unit
VCES Collector-Emitter Voltage VD=15V, VCIN=15V 1200 V
IC TC=25°C 300
Collector Current A
ICRM Pulse 600
Ptot Total Power Dissipation TC=25°C 1785 W
IE Emitter Current TC=25°C 300
A
IERM (Free wheeling Diode Forward current) Pulse 600
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.

CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage Applied between : VP1-VPC, VN1-VNC 20 V
VCIN Input Voltage Applied between : CPI-VPC, CNI-VNC 20 V
VFO Fault Output Supply Voltage Applied between : FPO-VPC, FNO-VNC 20 V
IFO Fault Output Current Sink current at FPO, FNO terminals 20 mA

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
Supply Voltage Protected by VD =13.5V ~ 16.5V
VCC(PROT) 800 V
SC Inverter Part, Tj =+125°C Start
VCC(surge) Supply Voltage (Surge) Applied between : C1-E2, Surge value 1000 V
Module case operating
TC -20 ~ +100 °C
temperature
Tstg Storage Temperature -40 ~ +125 °C
60Hz, Sinusoidal, Charged part to Base plate,
Visol Isolation Voltage 2500 V
AC 1min, RMS
*: TC measurement point is just under the chip.

THERMAL RESISTANCE
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
Rth(j-c)Q Thermal Resistance Junction to case, IGBT (per 1 element) (Note.1) - - 0.07
Rth(j-c)D Junction to case, FWDi (per 1 element) (Note.1) - - 0.107
K/W
Case to heat sink, (per 1 module)
Rth(c-s) Contact Thermal Resistance - 0.018 -
Thermal grease applied (Note.1)
Note.1: If you use this value, Rth(s-a) should be measured just under the chips.

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
Collector-Emitter Saturation VD=15V, IC=300A Tj=25°C - 1.65 2.15
VCEsat V
Voltage VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 1.85 2.35
VEC Emitter-Collector Voltage IE=300A, VD=15V, VCIN= 15V (Fig. 2) - 2.3 3.3 V
ton 0.3 0.8 2.0
trr VD=15V, VCIN=0V←→15V - 0.3 0.8
VCC=600V, IC=300A
tc(on) Switching Time - 0.4 1.0 s
Tj=125°C
toff Inductive Load (Fig. 3,4) - 2.4 3.3
tc(off) - 0.4 1.2
Collector-Emitter Cut-off Tj=25°C - - 1
ICES VCE=VCES, VD=15V , VCIN=15V (Fig. 5) mA
Current Tj=125°C - - 10

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

CONTROL PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
VP1-VPC - 2 4
ID Circuit Current VD=15V, VCIN=15V mA
VN1-VNC - 2 4
Vth(ON) Input ON Threshold Voltage Applied between : CPI-VPC, CNI-VNC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage 1.7 2.0 2.3
SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 450 - - A
Short Circuit Current Delay
toff(SC) VD=15V (Fig. 3, 6) - 0.2 - s
Time
OT Trip level 135 - -
Over Temperature Protection Detect Temperature of IGBT chip °C
OT(hys) Hysteresis - 20 -
UVt Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
-20≤Tj≤125°C V
UVr Protection Reset level - 12.5 -
IFO(H) - - 0.01
Fault Output Current VD=15V, VFO=15V (Note.2) mA
IFO(L) - 10 15
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
Ms Mounting part screw : M6 3.92 4.90 5.88
Mounting Torque N・m
Mt Main terminal part screw : M6 3.92 4.90 5.88
m Weight - - 510 - g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across C1-E2 terminals ≤ 800 V
Applied between : VP1-VPC, VN1-VNC
VD Control Supply Voltage 15.0±1.5 V
(Note.3)
VCIN(ON) Input ON Voltage Applied between : CPI-VPC, CNI-VNC ≤ 0.8
V
VCIN(OFF) Input OFF Voltage ≥ 4.0
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
Arm Shoot-through Blocking For IPM’s each input signals (Fig. 7)
tdead ≥ 3.5 s
Time
Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)

C1(C2) C1(C2)
NC NC

V *1 V *1

VD F*O VD F*O
V V
Ic I-Ic
E
C *I C*I
V*C V*C

E1(E2) E1(E2)

Fig. 1 VCEsat Test Fig. 2 VEC Test

C1 C1
NC NC

V P1 V P1

VD1 FPO VD1 FPO

CPI CPI

VPC VPC
Vcc E1C2 Vcc
NC E1C2 NC

V N1 V N1

VD2 FNO V D2 FNO

CNI C NI

VNC E2 VNC E2

Ic Ic

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

C1(C2)
NC A
V *1

VD F*O pulse VCE

C*I
V*C

E1(E2)

Fig. 5 ICES Test Fig. 6 SC test waveform

Fig. 7 Dead time measurement point example

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

C1
20k ≥10µ VP1
Vcc OUT

FPO + Vcc
OT
Fo
VD1 IF CPI SC -
IN
≥0.1µ VPC
GND
E1C2 (U)

20k ≥10µ VN1

Vcc OUT

FNO OT
Fo
IF CNI
VD2 IN
SC

≥0.1µ VNC E2
GND

C1
20k ≥10µ VP1
Vcc OUT
FPO OT
IF Fo
CPI SC
VD3 IN
≥0.1µ VPC
GND
E1C2 (V)
M

20k ≥10µ VN1

Vcc OUT

FNO OT
Fo
IF CNI SC
VD4 IN
≥0.1µ VNC E2
GND

C1
20k ≥10µ VP1
Vcc OUT
FPO OT
Fo
IF CPI SC
VD5 IN
≥0.1µ VPC
GND
E1C2 (W)

20k ≥10µ VN1

Vcc OUT

FNO OT
IF Fo
VD6 CNI SC
IN
≥0.1µ VNC E2
GND

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.
• Slow switching opto-coupler: CTR > 100%
• Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and
E2 terminal.

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

PERFORMANCE CURVES

COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
300 2.5

Tj=25°C

SATURATION VOLTAGE VCEsat (V)

250
2
COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER
VD=13V
200

VD=17V 1.5
VD=15V
150

1
100

VD=15V
0.5
50 Tj=25°C
Tj=125°C

0 0
0.5 1.0 1.5 2.0 0 50 100 150 200 250 300

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE WHEELING DIODE

VOLTAGE (VS. VD) CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
2.5 300

Ic=300A VD=15V
250
SATURATION VOLTAGE VCEsat (V)

Tj=25°C
Tj=25°C
Tj=125°C
EMITTER CURRENT IE (A)

Tj=125°C
COLLECTO R-EMITTER

2.0 200

150

1.5 100

50

1.0 0
12 13 14 15 16 17 18 0 0.5 1 1.5 2 2.5 3
CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

SWITCHING TIME (ton, toff) CHARACTERISTICS SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL) (TYPICAL)
10.0 10

toff tc(off)

SWITCHING TIME tc(on), tc(off) (μs)

SWITCHING TIME ton, toff (μs)

1.0

ton Vcc=600V
0.1 Vcc=600V
VD=15V
tc(on) VD=15V
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
Inductive Load
Inductive Load

0.1 0.01
10 100 1000 10 100 1000
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

FREE WHEELING DIODE

SWITCHING ENERGY CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL)
40 0.6 240
Eoff Vcc=600V
SWITCHING ENERGY Eon, Eoff (mJ/pulse)

Vcc=600V

REVERSE RECOVERY CURRENT Irr (A)

35 VD=15V
REVERSE RECOVERY TIME trr (μs)

VD=15V 0.5 200

Tj=25°C
Tj=25°C Irr
30 Tj=125°C
Tj=125°C
Inductive Load
Inductive Load 0.4 160
25

20 0.3 120

15
0.2 80

10
trr
0.1 40
5
Eon

0 0 0
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350

COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A)

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

FREE WHEELING DIODE

REVERSE RECOVERY ENERGY CHARACTERISTICS ID VS. fc CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 90
REVESE RECOVERY ENERGY Err (mJ/pulse)

18 Vcc=600V
80 VD=15V
VD=15V
Tj=25°C
16 Tj=25°C 70 Tj=125°C
Tj=125°C
14
Inductive Load 60
12
50

ID (mA)
10
40
8
30
6

20
4

2 10

0 0
0 100 200 300 400 0 5 10 15 20 25

EMITTER CURRENT IE (A) fc (kHz)

UV TRIP LEVEL VS. Tj CHARACTERISTICS SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL) (TYPICAL)
20 2

18 1.8
UVt
VD=15V
UVr
(SC of Tj=25°C is normalized 1)

16 1.6

14 1.4

12 1.2
UVt / UVr (V)

10 1
SC

8 0.8

6 0.6

4 0.4

2 0.2

0 0
-50 0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)

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PM300DV1A120
FLAT-BASE TYPE
INSULATED PACKAGE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
THERMAL IMPEDANCE Zth(j-c)
NORMALIZED TRANSIENT

0.1

Single Pulse
0.01
IGBT Part;
Per unit base: Rth(j-c)Q=0.07K/W
FWDi Part;
Per unit base: Rth(j-c)D=0.107K/W

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

TIME t (sec)

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