IHW15N120R2

Soft Switching Series

Reverse Conducting IGBT with monolithic body diode

Features: C
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers : G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : PG-TO-247-3-21

http://www.infineon.com/igbt/

Applications:
• Inductive Cooking
• Soft Switching Applications

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IHW15N120R2 1200V 15A 1.5V 175°C H15R1202 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 30
TC = 100°C 15
Pulsed collector current, tp limited by Tjmax ICpul s 45
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 45
Diode forward current IF
TC = 25°C 30
TC = 100°C 15
Diode pulsed current, tp limited by Tjmax IFpul s 45
Diode surge non repetitive current, tp limited by Tjmax IFSM
TC = 25°C, tp = 10ms, sine halfwave 50
TC = 25°C, tp ≤ 2.5µs, sine halfwave 130
TC = 100°C, tp ≤ 2.5µs, sine halfwave 120
Gate-emitter voltage VGE ±20 V
Transient Gate-emitter voltage (tp < 5 ms) ±25
Power dissipation TC = 25°C Ptot 357 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Mounting Torque Ms 0.6 Nm

1
J-STD-020 and JESD-022

Power Semiconductors 1 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.52 K/W
junction – case
Diode thermal resistance, RthJCD 0.47
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 15 A
T j =2 5 °C - 1.5 1.75
T j =1 2 5° C - 1.7 -
T j =1 7 5° C - 1.8 -
Diode forward voltage VF V G E = 0V , I F = 1 5 A
T j =2 5 °C - 1.45 1.65
T j =1 2 5° C - 1.55 -
T j =1 7 5° C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 0. 4m A, 5.1 5.8 6.4
VCE=VGE
Zero gate voltage collector current ICES V C E = 12 0 0V , µA
V G E = 0V
T j =2 5 °C - - 5
T j =1 7 5° C - - 2500
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 15 A - 11.7 - S
Integrated gate resistor RGint none Ω

Power Semiconductors 2 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1530 - pF
Output capacitance Coss V G E = 0V , - 49 -
Reverse transfer capacitance Crss f= 1 MH z - 39 -
Gate charge QGate V C C = 96 0 V, I C =1 5 A - 133 - nC
V G E = 15 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-off delay time td(off) T j =2 5 °C , - 282 -
Fall time tf V C C = 60 0 V, I C = 1 5 A - 62 -
V G E = 0 /1 5 V,
Turn-off energy Eoff R G = 14 . 8Ω, - 0.9 -
2)
Total switching energy Ets L σ =2 3 0n H, - 0.9 -
2)
C σ = 3 9p F

Switching Characteristic, Inductive Load, at Tj=175 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-off delay time td(off) T j =1 7 5° C - 342 -
Fall time tf V C C = 60 0 V, I C = 1 5 A, - 90 -
V G E = 0 / 15 V ,
Turn-off energy Eoff R G = 1 4. 8Ω , - 1.3 -
2)
Total switching energy Ets L σ =2 3 0n H , - 1.3 -
2)
C σ =3 9 pF

2)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

tp=1µs

10µs
40A
TC=80°C
10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

TC=110°C
30A
50µs

20A
Ic 200µs
1A
10A 1ms

10ms

0A DC
10Hz 100Hz 1kHz 10kHz 100kHz
1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. IGBT Safe operating area
switching frequency for hard (D = 0, TC = 25°C,
switching (turn-off) Tj ≤175°C;VGE=15V)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 14.8Ω)

250W
30A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER

200W

150W 20A

100W

10A
50W

0W
25°C 50°C 75°C 100°C 125°C 150°C 0A
25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj ≤ 175°C) (VGE ≥ 15V, Tj ≤ 175°C)

Power Semiconductors 4 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

40A 40A

VGE=20V
VGE=20V
15V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V
30A 30A 13V
13V
11V
11V
9V
9V
20A 20A 7V
7V

10A 10A

0A 0A
0V 1V 2V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

40A IC=30A
2.5V
TJ=175°C
IC, COLLECTOR CURRENT

30A 25°C 2.0V

IC=15A

1.5V
20A
IC=7.5A
1.0V

10A
0.5V

0A 0.0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE =15V)

Power Semiconductors 5 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

td(off)
td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns 100ns

tf

tf

10ns 10ns
0A 10A 20A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=14.8Ω, VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

6V
max.
t, SWITCHING TIMES

100ns 5V
tf typ.

4V
min.

3V

10ns 2V
25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE=600V, (IC = 0.4mA)
VGE=0/15V, IC=15A, RG=14.8Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

1.8mJ Eoff

2.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.5mJ

Eoff 1.3mJ
1.5mJ
1.0mJ

1.0mJ 0.8mJ

0.5mJ
0.5mJ
0.3mJ

0.0mJ
0.0mJ
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
0A 5A 10A 15A 20A 25A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical turn-off energy as a Figure 14. Typical turn-off energy as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=14.8Ω, VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

1.2mJ 1.5mJ
Eoff
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.0mJ

Eoff 1.0mJ
0.8mJ

0.6mJ

0.5mJ
0.4mJ

0.2mJ

0.0mJ 0.0mJ
400V 500V 600V 700V 800V 900V
25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical turn-off energy as a Figure 16. Typical turn-off energy as a
function of junction temperature function of collector emitter
(inductive load, VCE=600V, voltage
VGE=0/15V, IC=15A, RG=14.8Ω, (inductive load, TJ=175°C,
Dynamic test circuit in Figure E) VGE=0/15V, IC=15A, RG=14.8Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

15V 1nF Ciss

VGE, GATE-EMITTER VOLTAGE

240V
960V

c, CAPACITANCE
10V

100pF

Coss
5V

Crss

10pF
0V
0nC 50nC 100nC 150nC 200nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=15 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

D=0.5

0.2 0.2 R,(K/W) τ, (s)

-1
-1 10 K/W 0.1092 7.41*10-2
10 K/W
R,(K/W) τ, (s) 0.1517 8.77*10-3
0.1 0.1 0.1148 5.58*10-4
0.0861 9.37*10-2
0.1702 1.20*10-2 0.0198 3.81*10-5
0.05 R1
0.1372 1.03*10-3 0.05 R2
0.02 0.0454 1.15*10-4
R1 R2 0.02
0.01 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
0.01
single
pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse

-2 -2
10 K/W 10 K/W
10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 19. IGBT transient thermal Figure 20. Typical Diode transient thermal
resistance impedance as a function of pulse width
(D = tp / T) (D=tP/T)

Power Semiconductors 8 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

IF=30A
2.0V
40A

35A 15A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

1.5V
30A

25A 7.5A
TJ=25°C 1.0V
20A
175°C
15A

0.5V
10A

5A

0A 0.0V
0°C 50°C 100°C 150°C
0.0V 0.5V 1.0V 1.5V 2.0V

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as Figure 22. Typical diode forward voltage
a function of forward voltage as a function of junction temperature

Power Semiconductors 9 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

PG-TO247-3-21

Power Semiconductors 10 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH
an d Stray capacity C σ =39pF.

Power Semiconductors 11 Rev. 1.2 May 06

 IHW15N120R2
Soft Switching Series

Power Semiconductors 12 Rev. 1.2 May 06