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2MBI100VA-120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 100A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous TC =100°C 100
IC pulse 1ms 200
Collector current A
-IC 100
-IC pulse 1ms 200
Collector power dissipation PC 1 device 555 W
Junction temperature Tj 175
Operating junction temperature (under switching conditions) Tjop 150
°C
Case temperature TC 125
Storage temperature Tstg -40 ~ 125
Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC
Mounting (*2) - 5.0
Screw torque Nm
Terminals (*3) - 5.0
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V
Tj =25°C - 1.90 2.35
VCE (sat) VGE = 15V
Tj =125°C - 2.20 -
(terminal) IC = 100A
Tj =150°C 2.25
Collector-Emitter saturation voltage V
Tj =25°C - 1.75 2.20
VCE (sat) VGE = 15V
Tj =125°C - 2.05 -
(chip) IC = 100A
Tj =150°C 2.10
Internal gate resistance RG (int) - - 7.5 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 9.1 - nF
ton VCC = 600V LS = 30nH - 600 -
Turn-on time tr IC = 100A - 200 -
tr (i) VGE = ±15V - 50 - nsec
toff RG = 1.6Ω - 600 -
Turn-off time
tf Tj = 150°C - 40 -
Tj =25°C - 1.80 2.25
VF VGE = 0V
Tj =125°C - 1.95 -
(terminal) IF = 100A
Tj =150°C 1.90
Forward on voltage V
Tj =25°C - 1.70 2.15
VF VGE = 0V
Tj =125°C - 1.85 -
(chip) IF = 100A
Tj =150°C 1.80
Reverse recovery time trr IF = 100A - 150 - nsec
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.27
Thermal resistance (1device) Rth(j-c)
FWD - - 0.48 °C/W
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.050 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
250 250

VGE= 20V
VGE=20V 15V 12V 15V
200 200
12V

Collector current: IC [A]

Collector current: IC [A]

150 150

10V 10V
100 100

50 50 8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage
VGE= 15V / chip Tj= 25°C / chip
250 10

Tj=25°C 125°C150°C
Collector-Emitter Voltage: VCE [V]

200 8
Collector Current: IC [A]

150 6

100 4

IC=200A
50 2
IC=100A
IC=50A

0 0
0 1 2 3 4 5 10 15 20 25
Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V]

Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)

VGE= 0V, ƒ= 1MHz, Tj= 25°C VCC=600V, IC=100A, Tj= 25°C
100 20 800
Gate Capacitance: Cies, Coes, Cres [nF]

Collector-Emitter voltage: VCE [V]

15 600
Gate-Emitter voltage: VGE [V]

VCE
Cies 10 400
10
5 200

0 0

Cres -5 VGE -200

1
-10 -400

Coes -15 -600

0.1 -20 -800

0 10 20 30 -1.0 -0.5 0.0 0.5 1.0
Collector-Emitter voltage: VCE [V] Gate charge: Qg [μC]

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Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C VCC=600V, VGE=±15V, RG=1.6Ω, Tj=150°C
10000 10000
Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

1000 1000 ton
ton
toff toff

tr tr

100 100

tf tf

10 10
0 100 200 300 0 100 200 300

Collector current: IC [A] Collector current: IC [A]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
VCC=600V, IC=100A, VGE=±15V, Tj=125°C VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125, 150°C
10000 30
Switching loss: Eon, Eoff, Err [mJ/pulse]

Tj=125 oC
Switching time: ton, tr, toff, tf [nsec]

25 Tj=150 oC Eon

ton
1000 20
toff
tr Eoff
15
Err
100 10

tf 5

10 0
1 10 100 0 50 100 150 200 250

Gate resistance: RG [Ω] Collector current: IC [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
VCC=600V, IC=100A, VGE=±15V, Tj=125, 150°C +VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C
14 250
Tj=125 oC
Switching loss: Eon, Eoff, Err [mJ/pulse]

12 Tj=150 oC
Eon 200
Collector current: IC [A]

10 Eoff
150
8

6 Err
100

4
50
2

0 0
1 10 100 0 400 800 1200 1600
Gate resistance: RG [Ω] Collector-Emitter voltage: VCE [V]
(Main terminals)

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Forward Current vs. Forward Voltage (typ.) Reverse Recovery Characteristics (typ.)
chip VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C
250 1000

Reverse recovery time: trr [nsec]

Reverse recovery current: Irr [A]
200 Tj=125°C
Forward current: IF [A]

150 trr
lrr
100
100

125°C
50 150°C

0 10
0 1 2 3 0 100 200 300
Forward on voltage: VF [V] Forward current: IF [A]

Reverse Recovery Characteristics (typ.)

Transient Thermal Resistance (max.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=150°C
1000 1
FWD
Reverse recovery time: trr [nsec]
Reverse recovery current: Irr [A]

Thermal resistanse: Rth(j-c) [°C/W]

IGBT
trr 0.1
lrr
100

0.01

τ [sec] 0.0023 0.0301 0.0598 0.0708

Rth IGBT 0.02896 0.07343 0.10373 0.06389
10 [°C/W] FWD 0.05149 0.13053 0.18441 0.11358
0.001
0 100 200 300
0.001 0.01 0.1 1
Forward current: IF [A] Pulse Width : Pw [sec]

FWD safe operating area (max.)

Tj=150°C
250
Reverse recovery current: Irr [A]

200
Pmax=100kW

150

100

50

0
0 500 1000 1500
Collector-Emitter voltage: VCE [V]
(Main terminals)

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Outline Drawings, mm

Equivalent Circuit Schematic

C1

G1
E1
C2E1

G2
E2

E2

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The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

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