2MBI50N-120 IGBT Module

1200V / 50A 2 in one-package

Features
· High speed switching
· Voltage drive
· Low inductance module structure

Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Equivalent Circuit Schematic
Item Symbol Rating Unit
C2E1
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltaga VGES ±20 V C1 E2
Collector Continuous IC 50 A
current 1ms IC pulse 100 A
Continuous -IC 50 A
¤ ¤
1ms -IC pulse 100 A
Max. power dissipation PC 400 W
Operating temperature Tj +150 °C
G1 E1 G2 E2
Storage temperature Tstg -40 to +125 °C
¤ Current control circuit
Isolation voltage Vis AC 2500 (1min.) V
Screw torque Mounting *1 3.5 N·m
Terminals *1 3.5 N·m
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=1200V mA
Gate-Emitter leakage current IGES – – 15 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 4.5 – 7.5 VCE=20V, IC=50mA V
Collector-Emitter saturation voltage VCE(sat) – – 3.3 VGE=15V, IC=50A V
Input capacitance Cies – 8000 – VGE=0V pF
Output capacitance Coes – 2900 – VCE=10V
Reverse transfer capacitance Cres – 2580 – f=1MHz
Turn-on time ton – 0.65 1.2 VCC=600V µs
tr – 0.25 0.6 IC=50A
Turn-off time toff – 0.85 1.5 VGE=±15V
tf – 0.35 0.5 RG=24 ohm
Diode forward on voltage VF – – 3.0 IF=50A, VGE=0V V
Reverse recovery time trr – – 0.35 IF=50A µs

Thermal resistance characteristics

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) – – 0.31 IGBT °C/W
Rth(j-c) – – 0.85 Diode °C/W
Rth(c-f)*2 – 0.05 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI50N-120 IGBT Module

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
125 125

100 100
Collector current : Ic [A]

Collector current : Ic [A]

75 75

50 50

25 25

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Tj=125°C

10 10
VCE [V]

VCE [V]

8 8
Collector-Emitter voltage :

Collector-Emitter voltage :

6 6

4 4

2 2

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=600V, RG=24 ohm, VGE=±15V, Tj=25°C Vcc=600V, RG=24 ohm, VGE=±15V, Tj=125°C
1000

1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]

100
100

10 10
0 25 50 75 100 0 25 50 75 100
Collector current : Ic [A] Collector current : Ic [A]
2MBI50N-120 IGBT Module

Switching time vs. RG Dynamic input characteristics

Vcc=600V, Ic=50A, VGE=±15V, Tj=25°C Tj=25°C
1000 25
Switching time : ton, tr, toff, tf [n sec.]

800 20

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]

1000
600 15

400 10

200 5
100

00 0
10 30 50 100 0 200 400 600
Gate resistance : RG [ohm] Gate charge : Qg [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

VGE=0V trr, Irr, vs. IF

125 1000

100
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]
(Forward current : IF [A] )
Collector current : -Ic [A]

75

100

50

25

0 10
0 1 2 3 4 5 0 25 50 75 100

Emitter-Collector voltage VECD [V] Forward current : IF [A]

(Forward voltage : VF [V])

Switching loss vs. Collector current Reversed biased safe operating area
< 15V, Tj <
+VGE=15V, -VGE = = 125°C, RG >
= 24 ohm
Vcc=600V, RG=24 ohm, VGE=±15V
20 500
Switching loss : Eon, Eoff, Err [mJ/cycle]

400
15
Collector current : Ic [A]

300

10

200

5
100

0 0
0 25 50 75 100 0 200 400 600 800 1000 1200
Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
2MBI50N-120 IGBT Module

Capacitance vs. Collector-Emitter voltage

Transient thermal resistance Tj=25°C

Capacitance : Cies, Coes, Cres [nF]

Thermal resistance : R th (j-c) [°C/W]

10

0.1
1

0.01 0.1
0.001 0.01 0.1 1 0 5 10 15 20 25 30 35

Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]

Outline Drawings, mm

mass : 180g