NDT2955

April 2015

NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
This 60V P-Channel MOSFET is produced using • –2.5 A, –60 V. RDS(ON) = 300mΩ @ VGS = –10 V
Fairchild Semiconductor’s high voltage Trench process.
It has been optimized for power management RDS(ON) = 500mΩ @ VGS = –4.5 V
plications.
• High density cell design for extremely low RDS(ON)
Applications
• High power and current handling capability in a widely
• DC/DC converter used surface mount package.
• Power management

D D

D D

S
S
D G
G
G D S SOT-223 * G S
SOT-223 (J23Z)

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –2.5 A
– Pulsed –15
PD Maximum Power Dissipation (Note 1a) 3.0 W
(Note 1b) 1.3
(Note 1c) 1.1
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
2955 NDT2955 13’’ 12mm 2500 units

2002 Fairchild Semiconductor Corporation NDT2955 Rev.1.4

 NDT2955
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Avalanche Ratings
W DSS Drain-Source Avalanche Energy Single Pulse, VDD = 30 V, ID = 2.5 A 174 mJ

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –60 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –60 V, VGS = 0 V –10 µA
IGSSF Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –2 –2.6 –4 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 5.7 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –10 V, ID = –2.5 A 95 300 mΩ
On–Resistance VGS = –4.5 V, ID = –2 A 163 500
VGS=–10 V, ID =–2.5 A, TJ=125°C 153 513
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –12 A
gFS Forward Transconductance VDS = –10 V, ID = –2.5 A 5.5 S

Dynamic Characteristics
Ciss Input Capacitance VDS = –30 V, V GS = 0 V, 601 pF
Coss Output Capacitance f = 1.0 MHz 85 pF
Crss Reverse Transfer Capacitance 35 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = –30 V, ID = –1 A, 12 21 ns
tr Turn–On Rise Time VGS = –10 V, RGEN = 6 Ω 10 20 ns
td(off) Turn–Off Delay Time 19 34 ns
tf Turn–Off Fall Time 6 12 ns
Qg Total Gate Charge VDS = –30 V, ID = –2.5 A, 11 15 nC
Qgs Gate–Source Charge VGS = –10 V 2.4 nC
Qgd Gate–Drain Charge 2.7 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.5 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = –2.5 A (Note 2) –0.8 –1.2 V
Voltage
trr Diode Reverse Recovery Time IF = –2.5 A, 25 nS
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 40 nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 42°C/W when b) 95°C/W when c) 110°C/W when mounted on a

2
mounted on a 1in mounted on a .0066 minimum pad.
2
pad of 2 oz copper in pad of 2 oz
copper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

NDT2955 Rev.1.4
 NDT2955
Typical Characteristics

12 2
VGS = -10V VGS=-4.5V
-6.0V

DRAIN-SOURCE ON-RESISTANCE
1.8
-7.0V -5.0V
-ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
9
1.6
-5.0V

6 1.4
-4.5V
-6.0V
1.2 -7.0V
-8.0V
3 -10V
-4.0V 1

0 0.8
0 1 2 3 4 5 0 3 6 9 12
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.35
ID = -1.3A
ID = -2.5A
DRAIN-SOURCE ON-RESISTANCE

RDS(ON), ON-RESISTANCE (OHM)

1.6 0.3
VGS = -10V
RDS(ON), NORMALIZED

1.4
0.25
1.2 TA = 125oC
0.2
1
0.15
0.8
TA = 25oC
0.1
0.6

0.4 0.05
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10

TJ, JUNCTION TEMPERATURE ( C)

o -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with

withTemperature. Gate-to-Source Voltage.

10 10
TA = -55oC 25oC VGS =0V
VDS = -10V
-IS, REVERSE DRAIN CURRENT (A)

125oC
8 1
-ID, DRAIN CURRENT (A)

TA = 125oC
6 0.1

25oC
4 0.01

-55oC
2 0.001

0 0.0001
2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDT2955 Rev.1.4
 6.70 B
6.20

0.10 C B
3.10
2.90 3.25
4
1.90
A

3.70 6.10
3.30

1.90
1 3
0.84
0.60
2.30
0.95 2.30
4.60
0.10 C B LAND PATTERN RECOMMENDATION

SEE DETAIL A

1.80 MAX

0.08 C 7.30
C 6.70
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
R0.15±0.05 C) DIMENSIONS DO NOT INCLUDE BURRS
10°
GAGE 5° OR MOLD FLASH. MOLD FLASH OR BURRS
R0.15±0.05 DOES NOT EXCEED 0.10MM.
PLANE D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
0.35 E) LANDPATTERN NAME: SOT230P700X180-4BN
10° TYP 0.20 F) DRAWING FILENAME: MKT-MA04AREV3
0°

0.25 10°
5° 0.60 MIN
SEATING
1.70
PLANE

DETAIL A
SCALE: 2:1
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I77

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NDT2955