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    4-RTD - Dr.A.Ganguly

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    Abhigyan Ganguly
    This 3-credit course on Nano-Electronics discusses quantum mechanical tunneling and resonant tunnel diodes (RTDs). The course is taught by Dr. Abhigyan Ganguly and aims to understand the basic principles and operation of RTDs. The course outline covers quantum mechanical tunneling, resonant tunneling, negative differential resistance characteristics, and current-voltage characteristics of RTDs. RTDs exploit the phenomenon of quantum tunneling and can exhibit a negative differential resistance region in their current-voltage curve. They have potential applications in high frequency oscillators and high-speed switching.

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    4-RTD - Dr.A.Ganguly

    Uploaded by

    Abhigyan Ganguly
    15 views12 pages
    This 3-credit course on Nano-Electronics discusses quantum mechanical tunneling and resonant tunnel diodes (RTDs). The course is taught by Dr. Abhigyan Ganguly and aims to understand the basic principles and operation of RTDs. The course outline covers quantum mechanical tunneling, resonant tunneling, negative differential resistance characteristics, and current-voltage characteristics of RTDs. RTDs exploit the phenomenon of quantum tunneling and can exhibit a negative differential resistance region in their current-voltage curve. They have potential applications in high frequency oscillators and high-speed switching.

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    4-RTD- Dr.A.Ganguly

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    This 3-credit course on Nano-Electronics discusses quantum mechanical tunneling and resonant tunnel diodes (RTDs). The course is taught by Dr. Abhigyan Ganguly and aims to understand the basic principles and operation of RTDs. The course outline covers quantum mechanical tunneling, resonant tunneling, negative differential resistance characteristics, and current-voltage characteristics of RTDs. RTDs exploit the phenomenon of quantum tunneling and can exhibit a negative differential resistance region in their current-voltage curve. They have potential applications in high frequency oscillators and high-speed switching.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    15 views12 pages

    4-RTD - Dr.A.Ganguly

    Uploaded by

    Abhigyan Ganguly
    This 3-credit course on Nano-Electronics discusses quantum mechanical tunneling and resonant tunnel diodes (RTDs). The course is taught by Dr. Abhigyan Ganguly and aims to understand the basic principles and operation of RTDs. The course outline covers quantum mechanical tunneling, resonant tunneling, negative differential resistance characteristics, and current-voltage characteristics of RTDs. RTDs exploit the phenomenon of quantum tunneling and can exhibit a negative differential resistance region in their current-voltage curve. They have potential applications in high frequency oscillators and high-speed switching.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 12

    Lecture- 4

    Subject Name: Nano-Electronics


    Subject Code: PE-EC505A
    Credit: 3
    L-3
    Faculty Name: Dr. Abhigyan Ganguly

    Designation: Assistant Professor


    Course Outcome: To understand the basic principal and operation of RTD

    Lesson Plan: To study Quantum mechanical tunneling and to understand the NDR region,
    And operation of a RTD
    Course outline:
     Quantum Mechanical Tunneling
     Resonant Tunnel Diode
     Resonant Tunneling,
     NDR
     IV characteristics of RTD
    What is Quantum Tunneling?
     In classical Mechanics an electron needs to have enough kinetic to cross the potential barrier
     But in quantum level, electron is not just a particle but also behaves as a wave (Wave-Particle duality)
     Hence electrons in quantum level can actually tunnel through the potential barrier, even if their kinetic
    energy is lover than the potential barrier
    Quantum tunneling through a barrier. The energy of the tunneled particle is the same but the amplitude
    is decreased. (CC BY-NC 4.0; Ümit Kaya)
    Resonant Tunnel Diodes
     Resonant tunneling diodes are typically realized in III-V compound material systems, where
    heterojunctions made up of various III-V compound semiconductors are used to create the double or
    multiple potential barriers in the conduction band or valence band.
     Also called ‘Negative differential Resistance’ (NDR) device
     The NDR device is of interest due its potential applications in high 1. frequency oscillators, 2. high
    speed switching and 3. multi-level logic.
     Double barrier RTD devices have been grown by MBE from hexagonal AlN/GaN
     Such devices have not entered mainstream applications yet because the processing of III-V materials is
    incompatible with Si CMOS technology and the cost is high.
    No Bias Voltage applied
    1
    Forward Bias
    Voltage
    applied

    Increasing
    Bias Voltage
    applied 2
    1
    Increasing Bias Voltage further

    3
    4
    A working mechanism of a resonant tunneling diode device and negative differential resistance in
    output characteristic. There is a negative resistance characteristic after the first current peak, due
    to a reduction of the first energy level below the source Fermi level with gate bias. (Left: band
    diagram; Center: transmission coefficient; Right: current–voltage characteristics). The negative
    resistance behavior shown in right figure is caused by relative position of confined state to
    source Fermi level and bandgap.
    Department of Electronics And Communication Engineering
    Dr. Sudhir Chandra Sur Institute of Technology
    And
    Sports Complex
    Estd.2009

    Questions?

    1
    PC-EE 302, ANALOG ELECTRONICS
    2

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