BASIC ELECTRONICS LABORATORY

(ECEN1011)

Syllabus:

EXPERIMENT PAGE
EXPERIMENT NAME
NO NO
1 Familiarization with Electronic components 3
Familiarization with different measuring and
2 12
testing instrument used in electronic laboratory
Study of VI Characteristics of PN Junction diode &
3 Zener diode 22

o Study of the rectification characteristics of

Half wave rectifier
4 27
Full wave rectifier

Study On Characteristics
Of Bipolar Junction Transistor
5 31
In Common Emitter Configuration

Study on Characteristics
Of Bipolar Junction Transistor
6 38
in common base configuration

7 Study on characteristics of 44
Junction Field Effect Transistor
 Basic Electronics Laboratory (ECEN1011)

Application of Operational Amplifier

8 49

Application of Sub tractor, Integrator and

9 53
Differentiator
Determination Of Common Mode Rejection
Ratio, Bandwidth And Slew Rate Of An Operational
10 58
Amplifier

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 2 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT 1 – Familiarization with Electronic components

OBJECTIVE:
 Study of different electronic components

EQUIPMENT & COMPONENTS:

 Power supply
 A voltmeter
 Connecting wires
 Resistance and Capacitors
 Bread Board
 Diode (IN4007)
 Zener diode
 LED

THEORY:
RESISTOR

The resistor’s function is to reduce the flow of electric current. This symbol is used to
indicate a resistor in a circuit diagram, known as a schematic. Resistance value is designated in
units called the “Ohm”.

The resistance value of the resistor is not the only thing to consider when selecting the resistor
for use in a circuit. The “tolerance” and the electric power ratings of the resistor are also
important. Tolerance of a resistor denotes how close it is to the actual rated resistance value.
Power rating indicates how much power the resistor can safely tolerate.
There are two classes: 1. Fixed Resistors 2. Variable Resistors

Fixed Resistor
A fixed resistor is one in which the value of its resistance cannot change.

Carbon film resistors: -

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 3 / 58

 Basic Electronics Laboratory (ECEN1011)
This is the most general purpose, cheap resistor. It has a disadvantage, they tends to be
electrically noisy. Metal film resistors are recommended for use in analog circuit. The physical
size of the different resistors is as follows.

Variable Resistor
A variable resistor is one in which the value of its resistance can be change.

There are two ways in which variable resistors are used. One is the variable resistor which value
is easily changed, like the volume adjusted of radio, the other is semi-fixed resistor are used to
compensate for the inaccuracies of the resistors, and to fine-tune the circuit.

The rotation range of the variable resistor is usually about 300 degrees

Wire wound resistors:-

Wire wound resistors, which are used in electronic equipments and instruments where high
precision and more power dissipation are specified. Wire Wound Resistors are preferred over
metal oxide resistors because of being better temperature co-efficient and of smaller size. Again
wire wound resistors can be divided into silicon coated ceramic type, aluminium type etc., based
on chemical composition and type of application.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 4 / 58

 Basic Electronics Laboratory (ECEN1011)

CAPACITOR

The capacitor’s function is to store electricity, or electric energy. It also acts as a filter, passing
alternating current (AC), and blocking direct current (DC).

This symbol is is used to indicate a capacitor in a circuit diagram. The value of a capacitor
(the capacitance), is designated in units called the Farad (F).

Electrolytic Capacitors (Electrochemical type capacitors):-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 5 / 58

 Basic Electronics Laboratory (ECEN1011)
Electrolytic capacitors have polarity; they have a positive and a negative electrode (Polarised).
This means that it is very important which way round they are connected if they are connected in
an incorrect polarity, it may burst.

Ceramic Capacitors:-
Ceramic capacitors are comparatively small in size and have the shape of a disk. These capacitor
can be used in high frequency application as internally they are not constructed as a coil. It
should not be used for analog circuits, because they can distort the signal.

INDUCTOR
A coil wounded on a core or former of suitable material is called an inductor. In inductors
voltage required a directly proportional to the rate of change of Current.

DIODE
The diode is a device formed from a junction of n-type and p-type semiconductor material. The lead
connected to the p-type material is called the anode and the lead connected to the n-type material is
the cathode. In general the cathode of a diode is marked
by a solid line on the diode. Physically a diode is
recognized by IN number
such as IN4007.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 6 / 58

 Basic Electronics Laboratory (ECEN1011)

ZENER DIODE
The zener diode or reference diode, whose symbol is shown which finds primary usage as a
voltage regulator or reference. The forward conduction characteristic of a zener diode is much
the same as that of a rectifier diode; however it usually operates with a reverse bias, for which its
characteristic is radically different.

LED

A light-emitting diode (LED) is a semiconductor light source. When a light-emitting diode is

forward-biased (switched on), electrons are able to recombine with electron holes within the
device, releasing energy in the form of photons. Light-emitting diodes are used in applications as
diverse as aviation lighting, automotive lighting, advertising, general lighting, and traffic signals.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 7 / 58

 Basic Electronics Laboratory (ECEN1011)

Transistors
The transistor has been derived from two words, “trans” means transfer of signal “istor” same
general family resistor, so we can say transistor simply transfer the resistance. Transistor is a
three terminal device, when these three terminals are used in biasing arrangement they form two
p-n junctions, one junction is called emitter base junction and other is called collector base
junction.

The transistor transfers the signal from low resistance to high resistance.

Bipolar Junction Transistor (BJT):-

It is a three terminal component, which is constructed with three doped semiconductor
regions separated by two p-n junctions; the three regions are Emitter (E), Base (B) and
Collector (C). There are two types of BJT, they are a) NPN and b) PNP.

Field Effect Transistor (FET):-

The field-effect transistor (FET) is a transistor that uses an electric field to control the shape and
hence the conductivity of a channel of one type of charge carrier in a semiconductor material.
FETs are sometimes called uni-polar transistors to contrast their single-carrier-type operation

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 8 / 58

 Basic Electronics Laboratory (ECEN1011)

Integrated Circuits (ICs)

An Integrated circuit is a complete electronic circuit in which both the active and passive
components are fabricated on an extremely tiny single chip of silicon.

OBSERVATION TABLE:

o Table for the measurement of different resistance with color code

SL PRACTICAL VALUE THEORITICAL VALUE

NOS
1.

2.

3.

4.

5.

 Table for the measurement of different type of capacitors

SL PRACTICAL VALUE THEORITICAL VALUE

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 9 / 58

 Basic Electronics Laboratory (ECEN1011)

NOS

1.

2.

3.

4.

5.

Name of the Specification Symbol Physical Calculated Measured

component Diagram
Value Value

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 10 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT 2— Familiarization with different measuring and

testing instrument used in electronic laboratory.

OBJECTIVE: Study of measuring and testing different instrument

THEORY:
POWER SUPPLY
Precautions:-
a) Connect the input terminal of the power supply unit with ac main in proper way.
b) Knobs should be rotated slowly.
c) For small change of output use fine knob.
d) Power ON switch must be off when the device is not in use.
e) The location should be free from dust & humidity.
f) Do not operate the instrument where mechanical vibrations are excessive or near an
instrument, which generated strong electric or magnetic field.

For the operation of most of the devices in electronic equipment, a dc voltage is required.
Usually this supply is provided by the battery but maintenance of battery is not easy so we use a
battery eliminator in the place of battery. The equipment, which converts ac voltage of main
supply into dc voltage, called DC power supply.

There are two types of DC power supply:-

1. Unregulated power supply

2. Regulated power supply.

Variable DC Regulated Power Supply:-

A regulated power supply is an embedded circuit, or stand alone unit, the function of which is to
supply a stable voltage (or less often current), to a circuit or device that must be operated within
certain power supply limits. The output from the regulated power supply may be alternating or
unidirectional, but is nearly always DC.

Regulated DC power supply:-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 11 / 58

 Basic Electronics Laboratory (ECEN1011)
DC regulated power supply is a source of DC power input so that we can vary the output voltage
of the power supply. DC regulated power supply consists power transformer, rectifier, filter,
regulator

INSTRUCTION:

Before switching ON the unit, observe that no load is connected across the output terminals. Now
plug the unit into a three pin wall socket giving

230-V AC 50 Hz main supply and switch ON the unit.

SETTING THE VOLTAGE AND CURRENT LIMITS:

The power supply gives a constant voltage output with automatic crossover characteristics. For
setting the output voltage, adjust the “VOLTAGE COARSE &

FINE” control until the panel voltmeter reads the desired voltage, this voltage

Becomes the voltage limit of the supply.

For setting the current limit short circuit the output terminals on the front panel and adjust the
CURRENT COARSE & FINE, controls until the panel meter reads the desired current this
current becomes the current limit of the supply. Now remove the short circuit.

MULTIMETER
Precautions:-
a) The function selector switch should be kept in the voltage selection while meter is not in
used.
b) Zero adjustment for each range should be made before taking a measurement with
ohmmeter (for analog multimeter)
c) When the meter is linked to a measurement circuit, do not touch unused terminals.
d) When the value to be measured is unknown, set the range selector switch at the highest
position.
e) Before rotating the selector switch to change functions, disconnect test leads from the
circuit under test.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 12 / 58

 Basic Electronics Laboratory (ECEN1011)
f) Never perform resistance measurements on live circuit.
g) Always be careful when working with voltages. Keep fingers behinds the probe barriers
while measuring.
h) Before attempting to insert transistors for testing always be sure that the test leads have
been disconnected from any measurement circuit.
i) Replace the battery when its voltage falls due to long use of the ohmmeter.

Multimeter, is a measuring instrument, which is used to measure many (multi) electrical entities.
A simple multi meter can measure voltage (ac and dc), current (ac and dc) and resistances. A
multi meter consists of an ammeter, voltmeter and ohmmeter combined, with a function switch
to connect the appropriate circuit.

There is another switch, called the range switch, which is used to fix a range of measurements.

There are two type of Multimeter:-

1. Analog multi meter.

2. Digital multi meter.

Digital Multi meter:-

The digital multimeter (DMM) is a versatile and accurate instrument. In which the result of
measurement is displayed in discrete intervals or numerals. Although, DMM are expensive and
complicated then analog meter but if offers high accuracy, have high input impedance and
smaller in size than analog meter.

A basic digital multimeter is made up of several A/D converters, circuitry for counting and an
attenuation circuit.

CATHODE RAY OSCILLOSCOPE

(CRO)
Precautions:-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 13 / 58

 Basic Electronics Laboratory (ECEN1011)
a) Select a location free from high temperature, humidity and dust.
b) Do not operate the CRO in a place where mechanical vibration are excessive or a place
where strong magnetic fields are present.
c) Connect the input terminal of Function Generator unit with the AC main in proper way.
d) Do not increase the brightness of the Cathode Ray Tube more than is needed.
e) Switch off the mains of the unit when it is not in used.
f) BNC should be connected to the output terminal of Function Generator in a proper way.

The cathode ray oscilloscope (CRO) is a versatile laboratory instrument used for the visual
observation, measurement and analysis of waveforms. Basically a CRO is a very fast X-Y plotter
that shows an input signal versus another signal or versus time. CRO depends on the movement
of an electron beam, which is then made visible by allowing the beam to impinge on a phosphor
surface, which produces a visible spot.

Oscilloscope block diagram:-

The heart of the oscilloscope is the cathode ray tube (CRT). Which generates the electrons beam,
accelerates the beam to a high velocity deflect the beam to create image of input signals and
contains the phosphor screen where the electron beam eventually becomes visible. The rest part
of the CRO consists of circuitry to operate the CRT.

Oscilloscope has a time base generator, which generates the saw tooth voltage to supply the CRT
to deflect the spot at a constant time dependent rate. The signal to be viewed is fed to calibrate
gain vertical amplifier, which increases the potential of the input beam. To synchronize the
horizontal deflection with the vertical input, such that the horizontal deflection starts at the same
point of the input vertical signal each time it sweeps, a synchronizing or triggering circuit is

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 14 / 58

 Basic Electronics Laboratory (ECEN1011)
used. The power supply block provides the voltage required by the CRT to generate and
accelerates the electrons beam, as well as to supply the required operating voltage (not more than
few hundred) for other circuits of the oscilloscope.

CRT:
The main components of a general purpose CRT are

1. Electron Gun consisting cathode, focusing and accelerating electrodes.

2. Deflecting system.
3. Fluorescent Screen.

Electron Gun
It produces sharply focused beam of electrons, accelerated to a high velocity. It consists of an
indirectly heated cathode, a control grid, an accelerating electrode, a focusing anode and a final
accelerating anode. These electrodes have a cylindrical shape and they are connected to the pins
on the base. The cathode emitting the electron is completely surrounded by a control grid
consisting of a nickel cylinder with a small hole at the centre. The electrons that manage to pass
through this hole constitute the electron beam; the brightness of the spot on the face of the screen
depends upon the beam intensity. It can be controlled by changing the negative bias on the
control grid.

A high positive voltage is applied to the accelerating electrode with respect to the cathode. The
accelerating electrode thus speeds up the electron beam passing through it. These electrons,
being negatively charged, have a tendency to diverge from each other. So to focus the electron
beam into a tiny spot on the screen, there is a focusing anode which forms an electron optical
system with the help of accelerating and the final accelerating anode. The focusing anode is
given a slightly lower potential than the accelerating anodes. Because of the difference in
potentials the equipotent surfaces between the two cylinders (focusing anodes and accelerating
anodes) from a shape like a convex lens, when the electron beam passes through this region the
electrons experience a focus in a direction normal to the equipotent surfaces. As a result the
beam is converged to a point on the screen. Usually the accelerating anodes voltage is kept fixed
and by changing the potential of the focusing anode, we can change the focal length of the
electrostatic lens and focusing is achieved.

Deflecting System
Vertical deflection system:-
It provides amplified, signal of the proper level to derive the vertical plates without introducing
any appreciable distortion into the system.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 15 / 58

 Basic Electronics Laboratory (ECEN1011)
The block diagram of the vertical deflection system shows that the input connector feeds an
input attenuator, after which follows the vertical amplifier. There is a switch able input coupling
capacitor in the block diagram, which connects attenuator with input signal. Coupling capacitor
is provided so that measurement of ac signals may be viewed in the presence of high dc voltage.
When dc measurements are to be made, the capacitor may be removed using ac/dc switch.

Delay Line:
All electronic circuitry in the oscilloscope (attenuator, amplifier, pulse generator) causes a
certain amount of time delay in the transmission of signal voltage to the deflection plates. To
allow the operator to observe the leading edge of the signal waveform, the signal drive for
vertical deflection must be therefore delayed by at least the same amount of time required by the
horizontal deflection system. For this reason vertical delay line is used in between vertical
amplifier vertical deflecting plates of CRT.

Horizontal Deflection System:-

The horizontal deflection system consists of a time bead generator, a trigger circuit and a
horizontal amplifier.

Function Generator
A function generator is usually a piece of electronic test equipment or software used to generate
different types of electrical waveforms over a wide range of frequencies. Some of the most
common waveforms produced by the function generator are the sine, square, triangular and saw
tooth shapes. Function generators cover both audio and RF frequencies, they are usually not
suitable for applications that need low distortion or stable frequency signals. When those traits
are required, other signal generators would be more appropriate.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 16 / 58

 Basic Electronics Laboratory (ECEN1011)

Function Generator

EQUIPMENTS:
 Power Supply
 Multi meter
 CRO
 Function Generator

EXPERIMENTAL RESULTS:
TABLE-01
Measurement of DC voltage in CRO

SL NO OUTPUT OF DC SENSITIVITY (D) DEFLECTION OF LINE ON

DC VOLTAGE
SCREEN OF CRO
POWER SUPPLY {VOLT/DIV} (AXD)

TABLE-02
Measurement of AC voltage in CRO

SL NO TYPE OF VOLTAGE SENSITIVITY PEAK-PEAK PEAK-PEAK AMPLITUDE

SIGNAL (D) OF CRO {VOLT/DIV} DSTANCE OF VOLTAGE OF THE SIGNAL

THE APPLIED OF APPLIED (AXD)/2VOLT

SIGNAL ON SIGNAL

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 17 / 58

 Basic Electronics Laboratory (ECEN1011)
CRO SCREEN (AXD) VOLT

(A) DIV

TABLE-03
Measurement of frequency of AC signal using CRO

SL NO FREQUENCY READSENSITIVITY OF TIME PERIOD FREQUENCY OF DISPLAY OF

WAVEFORM ON
FROM F.G TIME BASE OF OF SIGNAL INAPPLIED SIGNAL
CRO
CRO IN SEC SEC IN Hz

TABLE-04
Measurement of DC voltage using digital multi meter

SL NO DC VOLTAGE READ SELECT RANGE DISPLAY OF VOLTAGE ON

FROM POWER OF DMM DMM IN mv OR VOLT

SUPPLY IN VOLT

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 18 / 58

 Basic Electronics Laboratory (ECEN1011)

TABLE-05
Measurement of R.M.S Voltage of a sinusoidal

SL NO FREQ OF SIGNAL (HZ) SELECT RANGE DISPLAY OF CALCULATED

VOLTAGE FROM
OF DMM (V/DIV) VOLTAGE ON
CRO
DMM
(rms value=amplitude

X0.707)

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 19 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT 3: Study of VI Characteristics of PN Junction diode &

Zener diode

OBJECTIVE:
a) Study of VI characteristics of junction diode.
b) Determine the cut-in voltage.

THEORY:
The diode is a device formed from a junction of n-type and p-type semiconductor material. The
lead connected to the p-type material is called the anode and the lead connected to the n-type
material is the cathode. In general the cathode of the diode is marked by a solid line on the diode.

The primary function of the diode is the rectification. When it is a forward bias (the higher
potential is connected to the anode lead), it will pass current. When it is reverse bias (the higher
potential is connected to the cathode lead), the current is blocked.

The characteristic curve of an ideal diode and a real diode are shown in the figure. For silicon
diode, the typical forward voltage is 0.7 volts, nominal. For germanium diodes the forward
voltage is only 0.3 volts.

For most simplified circuit analysis, the voltage drop across a conducting diode may be
considered constant at the nominal figure and not related to the amount of current. Actually, the
forward voltage drop is more complex. An equation describes the exact current through a diode,
given the voltage dropped across the junction, the temperature of the junction, and the several
physical constants. It is commonly known as the diode equation.

Shockley diode equation

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 20 / 58

 Basic Electronics Laboratory (ECEN1011)
The Shockley ideal diode equation or the diode law (named after transistor co-inventor William
Bradford Shockley, not to be confused with tetrode inventor Walter H. Shockley) is the I-V
characteristic of an ideal diode in either forward or reverse bias (or no bias). The equation is :-

Where,

I is the diode current,

IS is the reverse bias saturation current (or scale current),

VD is the voltage across the diode,

VT is the thermal voltage, and n is the ideality factor, also known as the quality
factor or sometimes emission coefficient.

The thermal voltage VT is approximately 25.85 mV at 300 K, a temperature close to "room

temperature" commonly used in device simulation software. At any temperature it is a
known constant defined by:

Where,
q is the magnitude of the charge on an electron (the elementary charge)
k is Boltzmann’s constant
T is the absolute temperature of the p-q junction in Kelvin

Diode Resistance:
Different kind of resistance is better explained by a simple but common example, the
diode. Shown below is a graph of (nonlinear) diode current as a function of diode voltage.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 21 / 58

 Basic Electronics Laboratory (ECEN1011)

At the operating point Q, the static (dc) current and voltage are ‘I’ and ‘V’. Consequently,
the total variable resistance is R=V/I. Because V and I are constant, R is also the static
resistance of the diode at Q. For incremental (small-signal) variation around Q, a change
in ‘V’ will produce a corresponding change in ‘I’. The resulting resistance is the
incremental resistance:
Where, r is calculated at operating point Q. This incremental resistance is
sometimes referred to as the dynamic resistance because it involves change in ‘V’ and ‘I’.

CIRCUIT DIAGRAM FOR P-N JUNCTION DIODE:

CIRCUIT DIAGRAM OF ZENER DIODE:

EQUIPMENTS:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 22 / 58

 Basic Electronics Laboratory (ECEN1011)
o Power supply
o A voltmeter (range 30 v)
o A few connecting hard wires
o A multi-ammeter (range 20mA)
o A bread board
o A diode
o 10 KΏ resistor

PROCEDURE:
 Make the circuit as shown in the above figure.
 Set the meter indicated by “A” to 20 mA range. Set the meter “V” to read up 4v on
the DC supply rotary voltage control fully anticlockwise (0V).
 Now switch ON the power supply and carefully turn the voltage control wise whilst
watching the ammeter.
 Set the value of the voltage and observe the values of the current. Plot these values.
 On the graph paper. The resulting graph shows that the little current passes until the
voltage has risen to 0.6V (for silicon), but the current rises rapidly with further
increases voltage.
 Repeat all previous steps and fill the observation table.
 Finally plot the V-I characteristics of diode on graph paper.

OBSERVATION TABLE:

DIODE FORWARD CHARACTERISTICS REVERSE CHARACTERISTICS

SL NOS CURRENT VOLTAGE SL NOS CURRENT VOLTAGE

SILICON
DIODE

GERMANIUM
DIODE

ZENER
DIODE

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 23 / 58

 Basic Electronics Laboratory (ECEN1011)

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 24 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT NO 4: STUDY OF HALF & FULL WAVE RECTIFIERS

OBJECTIVE: Study of the rectification characteristics of
Half wave rectifier
Full wave rectifier
To observe O/P wave forms with and without filter circuit
To calculate ripple factor from experimental data

THEORY:
A rectifier is a circuit that converts pulsating ac into pulsating. There are three basic type of
rectifier circuits the half wave, full wave (centre tapped) and rectifiers. Of them, bridge rectifier
is the most commonly used.

HALF WAVE RECTIFIER

Half wave rectification is a process, which converts an ac sinusoidal input voltage into a
pulsating dc voltage with the output pulse occurring for each input cycle. The half wave rectifier
conducts the current only during the positive half input cycle. The half wave rectifier is made up
of single diode and resistor (load). The half wave rectifier conducts the current only during the
positive cycle of the ac input supply. The negative half cycle of a c supply is suppressed i.e
during the negative half cycle, no current is conducted and hence no voltage appears across the
load. Therefore currents always flow in one direction (i.e d.c) through the load after every half
cycle

Operation:
The a.c voltage is applied across the secondary windings. During the positive half cycle of a.c
input voltage point 5 is positive with
respect to point 8. this make the diode
upper half cycle.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 25 / 58

 Basic Electronics Laboratory (ECEN1011)
During the negative half cycle, point 5 is negative with respect to under the diode D1 is reverse
bias and no current conducts as shown in figure the current flows through the diode during the
positive half cycle. In this the current flows through the load always in same direction. Hence
d.c output is obtained thus complete the output wave form of half wave rectifier of three cycle
will look like as shown in the figure.

EQUIPMENTS:
1. Centre tapped Transformer
2. CRO
3. A voltmeter (range 30 v)
4. A few connecting wires
5. A bread board
6. Diode
7. Capacitor
8. 10 KΏ resistor

CIRCUIT DIAGRAM:

FULL WAVE RECTIFIER

Full wave rectification is the process through which an ac sinusoidal input voltage is converted
into a pulsating dc voltage with two output pulses occurring for each input cycle. The full wave
rectifier consists of two diodes and a load resistor.

Operation:-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 26 / 58

 Basic Electronics Laboratory (ECEN1011)
During the positive half cycle of a.c input voltage, point 5 is positive and point 8 is negative.
This make the diode D1 forward bias and D2 reverse bias.

Therefore D1 conducts the current and D2 does not conduct the current, so current will only flow
across D1 through the load resistor in upper half cycle as shown in the figure. During the
negative half cycle, of the a.c input voltage point 5 is negative and point 8 is positive. Under this
condition the diode D2 is forward bias while diode D1 is reverse biased. Therefore D2 conducts
the current because D2 is in forward biased condition while D1 does not conduct current because
the D1 is in reverse bias condition.

PROCEDURE:-
 Make the circuit diagram as shown in the figure above.
 Observe the rectifier output.
 Calculate the ripple factor.
 Observe the ripple on the oscilloscope, using the feature of dc/ac coupling

OBSERVATION TABLE:
TYPES OF INPUT OUTPUT O/P O/P RIPPLE

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 27 / 58

 Basic Electronics Laboratory (ECEN1011)
RECTIFIER VOLTAGE Vdc

VOLTAGE V’rms FACTOR

WITHOUT

HALF WAVE FILTER

WITH

FILTER

WITHOUT

FULL WAVE FILTER

WITH

FILTER

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 28 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT NO 5: Study On Characteristics

Of Bipolar Junction Transistor
In Common Emitter Configuration

OBJECTIVE:-
To obtain input output characteristics of BJT in common Emitter configuration.

EQUIPMENTS & COMPONENTS:-

o Power cycle
o Voltmeter
o Multi ammeter
o Transistor (NPN)
o Resistance (82 kΏ)
o Some connecting wires
THEORY:-
When a transistor is operated in such a way that a emitter terminal is common in both the
input and output circuits, the mode of operation is called the common emitter (CE) mode
or the grounded emitter configuration of the transistor.

The plot of collector current I (C) against the collector –to-emitter voltage V(CE) with the
base current I(B) as a parameter is known as the CE mode output characteristics of the
transistor.

The portion of the output characteristics where the emitter junction is forward biased and
the collector junction is reverse biased is termed the active region of the characteristics. In
this region, I(B)>0 and V(CE)≥a few lengths of a volts. The ac current gain 8 (h(fe)) and
the output admittance h(oe) for the CE mode are respectively given by.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 29 / 58

 Basic Electronics Laboratory (ECEN1011)

TRANSISTOR
Introduction:-
The transistor is a three layer (electrode) semiconductor device. Three electrodes are the
emitter, the base and the collector. The emitter injects charge carriers into the base, which
in controls the numbers these carriers that are eventually gathered by the collector.

There are two types of semiconductors:-

1. NPN

2. PNP

In both the types the emitter base junction is forward biased and the collector base
junction is reverse biased.

When the transistor is used as the amplifier, the input voltage is given between two
terminals and the output is taken from another pair of terminals, we have to make one of
the terminals common to the input and the output terminals. The BJT can be used with any
of its terminals as the common point. The resulting circuit configuration are: Common
base (CB) , Common Emitter (CE) And Common Collector (CC).

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 30 / 58

 Basic Electronics Laboratory (ECEN1011)
The families of characteristics curves specify the transistor parameters in any of the
configurations mentioned. One set the output characteristics gives the V-I relationship at
the output terminals for different values of the input current.

Theory:-
The collector–emitter current can be viewed as being controlled by the base–emitter
current (current control), or by the base–emitter voltage (voltage control). These views are
related by the current–voltage relation of the base–emitter junction, which is just the usual
exponential current–voltage curve of a p-n junction (diode).

The physical explanation for collector current is the amount of minority carriers in the
base region. Due to low level injection (in which there are much fewer excess carriers than
normal majority carriers) the am bipolar diffusion rate (in which the excess majority and
minority carriers flow at the same rate) is in effect determined by the excess minority
carriers.

Bipolar transistors have five distinct regions of operation, defined by BJT junction biases

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 31 / 58

 Basic Electronics Laboratory (ECEN1011)
The modes of operation can be described in terms of the applied voltages (this description
applies to NPN transistors; polarities are reversed for PNP transistors):

 Forward active: base higher than emitter, collector higher than base (in this mode
the collector current is proportional to base current by ).
 Saturation: base higher than emitter, but collector is not higher than base.
 Cut-Off: base lower than emitter, but collector is higher than base. It means the
transistor is not letting conventional current to go through collector to emitter.
 Reverse-active: base lower than emitter, collector lower than base: reverse
conventional current goes through transistor.

CIRCUIT DIAGRAM:

Working Procedure:-

1. Connect the circuit as shown in the diagram.

2. Turn two power supply knobs (Base supply and collector supply) at minimum
position.
3. Put ON the supply switch.
4. For input characteristics.

This is the relationship between and both associated with the input port:

Here

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 32 / 58

 Basic Electronics Laboratory (ECEN1011)

as the EB junction is essentially the same as a forward biased diode. Also,

higher can slightly increase .

5.For output Characteristics:

This is the relationship between and both associated with the output port:

When , i.e., the CB junction is reverse biased, the current depends totally on

. When , is the current caused by the minority carriers crossing the PN-
junction. This is similar to the diode current-voltage characteristics seen before, except both

axes are reversed (as both and are defined in the opposite directions). When is

increased, is increased correspondingly. Higher can slightly

increase .

As , CB configuration does not have current-amplification effect. However,

if is held constant, and therefore will also be held constant, i.e., CB transistor
circuit can be used as a current source.

OBSERVATION:-
TABLE-01

Data for input characteristics

SL NOS COMMON EMITTER BASE EMITTER VOLTAGE BASE

VOLTAGE VCE (V) . VBE (V) CURRENT . IB
µA

1 2V

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 33 / 58

 Basic Electronics Laboratory (ECEN1011)

2 4V

3 6V

4 8V

TABLE-02

Data for output characteristics

SL NOS BASE CURRENT IB µA COLLECTOR EMITTER COLLECTOR

VOLTAGE VCE (V) CURRENT IC (µA)

1 0 µA

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 34 / 58

 Basic Electronics Laboratory (ECEN1011)

2 10 µA

3 20 µA

4 30 µA

CONCLUSION:
EXPERIMENT NO 6: Study on Characteristics of Bipolar Junction Transistor in
common base configuration

OBJECTIVE:
To obtain input output characteristics of BJT in Common Base configuration.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 35 / 58

 Basic Electronics Laboratory (ECEN1011)

EQUIPMENTS & COMPONENTS:-

o Power cycle
o Voltmeter
o Multi ammeter
o Transistor (NPN)
o Resistance (1KΏ & 500Ώ)
o Some connecting wires

THEORY: TRANSISTOR

Introduction:-
The transistor is a three layer (electrode) semiconductor device. Three electrodes are the emitter,
the base and the collector. The emitter injects charge carriers into the base, which in controls the
numbers these carriers that are eventually gathered by the collector.

There are two types of semiconductors:-

1. NPN

2. PNP

In both the types the emitter base junction is forward biased and the collector base
junction is reverse biased

When the transistor is used as the amplifier, the input voltage is given between two terminals and
the output is taken from another pair of terminals, we have to make one of the terminals common
to the input and the output terminals. The BJT can be used with any of its terminals

as the common point. The resulting circuit configuration are: Common base (CB) , Common
Emitter (CE) And Common Collectot (CC).

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 36 / 58

 Basic Electronics Laboratory (ECEN1011)
The families of characteristics curves specify the transistor parameters in any of the
configurations mentioned. One set the output characteristics gives the V-I relationship at the output
terminals for different values of the input current.

Theory:-
In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-
stage bipolar junction transistor (BJT) amplifier topologies, typically used as
a current buffer or voltage amplifier. In this circuit the emitter terminal of the transistor serves as the
input, the collector the output, and the base is common to both (for example, it may be tied to ground
reference or a power supply rail), hence its name. The analogous field-effect transistor circuit is
the common-gate amplifier.

This arrangement is not very common in low-frequency circuits, where it is usually

employed for amplifiers that require unusually low input impedance, for example to act as
a preamplifier for moving-coil microphones. However, it is popular in high-frequency
amplifiers, for example for VHF and UHF, because its input capacitance does not suffer
from the Miller effect, which degrades the bandwidth of the common-
emitter configuration, and because of the relatively high isolation between the input and
output. This high isolation means that there is little feedback from the output back to the
input, leading to high stability.

This configuration is also useful as a current buffer since it has a current gain of approximately
unity (see formulas below). Often a common base is used in this manner, preceded by a
common-emitter stage. The combination of these two forms the cascode configuration, which
possesses several of the benefits of each configuration, such as high input impedance and
isolation.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 37 / 58

 Basic Electronics Laboratory (ECEN1011)

CHARACTERISTICS:-

The amplifier input impedance Rin looking into the emitter node is very low, given
approximately by
,

Where VT is the thermal voltage and IE is the DC emitter current.

For example, for VT = 26 mV and IE = 10 mA, rather typical values, Rin = 2.6 Ω.
If IE is reduced to increase Rin, there are other consequences like lower
transconductance, higher output resistance and lower β that also must be
considered. A practical solution to this low-input-impedance problem is to place a
common-emitter stage at the input to form a cascode amplifier.

 Because the input impedance is so low, most signal sources have larger source
impedance than the common-base amplifier Rin. The consequence is that the
source delivers a current to the input rather than a voltage, even if it is a voltage
source. (According to Norton's theorem, this current is approximately iin = vS /
RS). If the output signal also is a current, the amplifier is a current buffer and
delivers the same current as is input. If the output is taken as a voltage, the
amplifier is a transresistance amplifier, and delivers a voltage dependent on the
load impedance, for example vout = iin RL for a resistor load RL much smaller in
value than the amplifier output resistance Rout. That is, the voltage gain in this
case (explained in more detail below) is:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 38 / 58

 Basic Electronics Laboratory (ECEN1011)

OBSERVATION:-
TABLE-01

DATA FOR INPUT CHARACTERISTICS

SL NOS COMMON BASE EMITTER BASE VOLTAGE EMITTER CURRENT

VOLTAGE VCB (V) VEB (V) IE (mA)

1 0V

2 -1V

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 39 / 58

 Basic Electronics Laboratory (ECEN1011)

3 -2V

4 -3V

TABLE-02

DATA FOR OUTPUT CHARACTERISTICS

SL NOS EMITTER CURRENT IE COLLECTER BASE VOLTAGE COLLECTOR CURRENT

(mA) VCB VOLT IC ( mA)

1 10mA

2 20mA

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 40 / 58

 Basic Electronics Laboratory (ECEN1011)

3 30mA

4 40mA

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 41 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT NO 7: Study on characteristics of

Junction Field Effect Transistor

OBJECTIVE:
To obtained the drains and transfer characteristics of FET
From the plotted curve obtain drain resistance. Amplification factor and mutual
transconductance.

EQUIPMENTS & COMPONENTS:-

 A voltmeter (range 30v)
 Miliammeter
 A few connecting hard wires
 A bread board
 Field Effect Transistor
 1 KΏ resistor
 Two variable power supply

THEORY: Field Effect Transistor

The Field Effect Transistor is a three terminal unipolar semiconductor device that has very
similar characteristics to those of their Bipolar Transistor counterparts i.e, high efficiency,
instant operation, robust and cheap and can be used in most electronic circuit applications to
replace their equivalent bipolar junction transistors (BJT) cousins.

Field effect transistors can be made much smaller than an equivalent BJT transistor and along
with their low power consumption and power dissipation makes them ideal for use in integrated
circuits such as the CMOS range of digital logic chips.

We remember from the previous tutorials that there are two basic types of Bipolar Transistor
construction, NPN and PNP, which basically describes the physical arrangement of the P-type
and N-type semiconductor materials from which they are made. This is also true of FET as there
are also two basic classifications of Field Effect
Transistor, called the N-channel FET and the P-channel
FET.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 42 / 58

 Basic Electronics Laboratory (ECEN1011)

The field effect transistor is a three terminal device that is constructed with no PN-junctions
within the main current carrying path between the Drain and the Source terminals, which
correspond in function to the Collector and the Emitter respectively of the bipolar transistor. The
current path between these two terminals is called the "channel" which may be made of either a
P-type or an N-type semiconductor material. The control of current flowing in this channel is
achieved by varying the voltage applied to the Gate. As their name implies, Bipolar Transistors
are "Bipolar" devices because they operate with both types of charge carriers, Holes and
Electrons. The Field Effect Transistor on the other hand is a "Unipolar" device that depends only
on the conduction of electrons (N-channel) or holes (P-channel).

The Field Effect Transistor has one major advantage over its standard bipolar transistor
cousins, in that their input impedance, (Rin ) is very high, (thousands of Ohms), while the BJT is
comparatively low. This very high input impedance makes them very sensitive to input voltage
signals, but the price of this high sensitivity also means that they can be easily damaged by static
electricity. There are two main types of field effect transistor, the Junction Field Effect
Transistor or JFET and the Insulated-gate Field Effect Transistor or IGFET), which is more
commonly known as the standard Metal Oxide Semiconductor Field Effect Transistor
MOSFET for short.

Junction Field Effect Transistor

We saw previously that a bipolar junction transistor is constructed using two PN-junctions in the
main current carrying path between the Emitter and the Collector terminals. The Junction Field
Effect Transistor (JUGFET or JFET) has no PN-junctions but instead has a narrow piece of high-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 43 / 58

 Basic Electronics Laboratory (ECEN1011)
resistivity semiconductor material forming a "Channel" of either N-type or P-type silicon for the
majority carriers to flow through with two ohmic electrical connections at either end commonly
called the Drain and the Source respectively.

There are two basic configurations of junction field effect transistor, the N-channel JFET and
the P-channel JFET. The N-channel JFET's channel is doped with donor impurities meaning that
the flow of current through the channel is negative (hence the term N-channel) in the form of
electrons. Likewise, the P-channel JFET's channel is doped with acceptor impurities meaning
that the flow of current through the channel is positive (hence the term P-channel) in the form of
holes. N-channel JFET's have a greater channel conductivity (lower resistance) than their
equivalent P-channel types, since electrons have a higher mobility through a conductor
compared to holes. This makes the N-channel JFET's a more efficient conductor compared to
their P-channel counterparts.

We have said previously that there are two ohmic electrical connections at either end of
the channel called the Drain and the Source. But within this channel there is a third
electrical connection which is called the Gate terminal and this can also be a P-type or N-
type material forming a PN-junction with the main channel. The relationship between the
connections of a junction field effect transistor and a bipolar junction transistor are
compared below.

CIRCUIT DIAGRAM:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 44 / 58

 Basic Electronics Laboratory (ECEN1011)

OBSERVATION TABLE:

Table-01
o Data for Drain Characteristics

VGS=0V VGS=1V

SL NOS ID (mA) VDS (V) ID (mA) VDS (V)

Table-02
o Data for Transfer Characteristics

SL NOS VDS=2.5

ID (mA) Vgs (V)

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 45 / 58

 Basic Electronics Laboratory (ECEN1011)

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 46 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT NO 8: Application of Operational Amplifier

OBJECTIVE:
To the study inverting amplifier, non inverting amplifier, adder, Subtractor, integrator and
differentiator circuit using operational amplifier.

THEORY: The Non Inverting Op Amp:

The second basic configuration of an operational amplifier circuit is that of a Non-inverting
Amplifier. In this configuration, the input voltage signal, (Vin) is applied directly to the non-
inverting (+) input terminal which means that the output gain of the amplifier becomes
"Positive" in value in contrast to the "Inverting Amplifier" circuit we saw in the last tutorial
whose output gain is negative in value. The result of this is that the output signal is "in-phase"
with the input signal.

The Inverting Op Amp:

An inverting amplifier inverts and scales the input signal. As long as the op-amp gain is very large, the
amplifier gain is determined by two stable external resistors (the feedback resistor Rf and the input
resistor Rin) and not by op-amp parameters which are highly temperature dependent. In particular,
the Rin–Rf resistor network acts as an electronic seesaw (i.e., a class-1 lever) where the inverting
(i.e., −) input of the operational amplifier is like a fulcrum about which the seesaw pivots. That is,
because the operational amplifier is in a negative-feedback configuration, its internal high gain
effectively fixes the inverting (i.e., −) input at the same 0 V (ground) voltage of the non-inverting (i.e.,
+) input, which is similar to the stiff mechanical support provided by the fulcrum of the seesaw.
Continuing the analogy,

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 47 / 58

 Basic Electronics Laboratory (ECEN1011)

THE ADDER
The adder circuit can be made by connecting more inputs to the inverting op amp. The opposite end of
the resistor connected to the inverting input is held at virtual ground by the feed back, therefore, adding
new inputs does not effect the response of the existing inputs.

CIRCUIT DIAGRAM:

OBSERVATION TABLE:

o Non Inverting Op Amp

Theoretical value Practical value

VIN VOUT VIN VOUT

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 48 / 58

 Basic Electronics Laboratory (ECEN1011)
o Inverting Op Amp
o
Theoretical value Practical value

VIN VOUT VIN VOUT

o ADDER
Theoretical value Practical value

VIN1 VIN2 VOUT VIN1 VIN2 VOUT

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 49 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT NO 9: Application of Sub tractor, Integrator and

Differentiator
OBJECTIVE:
To the study Subtractor, integrator and differentiator circuit using operational amplifier

EQUIPMENTS REQUIRED:-
o Power supply
o Voltmeter
o Resistance
o Capacitor
o CRO
o Function generator
o Op Amp (741)

THEORY:
SUBTRACTOR:-
The circuit that takes the difference of two signals is called a Subtractor. It is made by connecting an
inverting amplifier to a two-input inverting average.

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 50 / 58

 Basic Electronics Laboratory (ECEN1011)

INTEGRATOR:-
The integrator basically works like this: whatever current I you get flowing in R1, gets integrated across
capacitor C1. The output voltage Vo is simply the voltage across C1. One great application of the integrator
is generating a ramp voltage. You can do this by placing a fixed voltage at VS that forces a constant current
through R1. The capacitor then integrates this current creating a ramping voltage. The action is just like a
garden hose running water at a constant rate causing the level in a bucket to rise steadily. The smaller the
diameter bucket (smaller capacitor), the faster the increase in water level (greater voltage). The switch is
needed to discharge the capacitor (empty the bucket) at the end of a ramping cycle.

DIFFERENTIATOR:-
The basic Op-amp Differentiator circuit is the exact opposite to that of the Integrator operational
amplifier circuit that we saw in the previous tutorial. Here, the position of the capacitor and resistor
have been reversed and now the reactance, is connected to the input terminal of the inverting amplifier
while the resistor, forms the negative feedback element across the operational amplifier as normal.

CIRCUIT DIAGRAM:

OBSERVATION TABLE:
Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 51 / 58
 Basic Electronics Laboratory (ECEN1011)

o SUBTRACTOR

Theoretical value Practical value

VIN1 VIN2 VOUT VIN1 VIN2 VOUT

o INTEGRATOR

VIN INPUT INPUT VOUT OUTPUT OUTPUT

WAVEFORM FREQUENCY WAVEFORM FREQUENCY

o DIFFERENTIATOR

VIN INPUT INPUT VOUT OUTPUT OUTPUT

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 52 / 58

 Basic Electronics Laboratory (ECEN1011)
WAVEFORM FREQUENCY WAVEFORM FREQUENCY

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 53 / 58

 Basic Electronics Laboratory (ECEN1011)

EXPERIMENT 10 – Determination Of Common Mode Rejection

Ratio, Bandwidth And Slew Rate Of An Operational Amplifier

OBJECTIVE:
To measure common mode rejection ratio, bandwidth, slew rate of an op
amp.

Theory:-
Common Mode Rejection Ratio (CMRR)

The common-mode rejection ratio (CMRR) of a differential amplifier (or other device) is
the tendency of the devices to reject the input signals common to both input leads. A high
CMRR is important in applications where the signal of interest is represented by a small
voltage fluctuation superimposed on a (possibly large) voltage offset, or when relevant
information is contained in the voltage difference between two signals.
CIRCUIT DIAGRAM:-

Working procedure:-
1. Connect the circuit as shown in the figure.
2. Give the sinusoidal input of 1 volt peak to peak 500 Hz.
3. Switch ON the dual power supply.
4. Note down the output voltage.
5. Determine the CMRR using the following formula

Common mode gain (AC)=VOUT/VIN

Differential made gain (Ad)=R2/R1

CMRR=20log [Ad/Ac] in Db

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 54 / 58

 Basic Electronics Laboratory (ECEN1011)
6. Repeat the experiment for 1KHz, 10KHz, 100KHz

Table-01
o Determination of common mode rejection ratio

Frequency VIN VOUT Ac Ad (dB) CMRR

BANDWIDTH
The gain–bandwidth product for an amplifier is the product of the amplifier's
bandwidth and the gain at which the bandwidth is measured. Operational amplifiers that
are designed to have a simple one-pole frequency response, the gain–bandwidth product is
nearly independent of the gain at which it is measured; in such devices the gain–
bandwidth product will also be equal to the unity-gain bandwidth of the amplifier. For an
amplifier in which negative feedback reduces the gain to below the open-loop gain, the
gain–bandwidth product of the closed-loop amplifier will be approximately equal to that
of the open-loop amplifier

CIRCUIT DIAGRAM:-

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 55 / 58

 Basic Electronics Laboratory (ECEN1011)

Working procedure:-
1. Connect the circuit as shown in the figure.
2. Give the sinusoidal input of 1 volt peak to peak.
3. Switch ON the dual power supply
4. Increase the frequency in suitable step and note down the corresponding out put
voltage.
5. Plot the frequency vs gain in graph then from the graph find the frequency, at which
output voltage reduces to 0.7 times the output voltage, this gives the bandwidth of
the op-amp at unity gain.

Table-02

o Determination of bandwidth of an op-amp

Input voltage (Vi) = V

SL NOS FREQUENCY OUTPUT VOLTAGE BANDWIDTH

IN KHz VOLTAGE IN GAIN (VO/VI) FROM GRAPH
VOLT

Plot frequency vs voltage gain in a graph.

SLEW RATE
The slew rate of an electronic circuit is defined as the maximum rate of change of the
output voltage. Slew rate is usually expressed in units of V/µs.

Where is the output produced by the amplifier as

a function of time t. Limitations in slew rate capability can give rise to non linear effects
in electronic amplifiers. For a sinusoidal waveform not to be subject to slew rate
limitation, the slew rate capability (in volts per second) at all points in an amplifier must
satisfy the following condition:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 56 / 58

 Basic Electronics Laboratory (ECEN1011)

Where f is the operating frequency, and is the peak amplitude of the waveform.
In mechanics the slew rate is given in dimensions 1/T and is associated with the change in
position over time of an object which orbits around the observer.

CIRCUIT DIAGRAM:-

Working procedure:-
1. Connect the circuit as shown in the figure.
2. Give the sinusoidal input of 1 volt peak to peak 1KHz
3. Switch ON the dual power supply
4. Note the change of output voltage (ΔVo) and change of time for the rising and
falling slop (Δt)
5. Vary the input frequency in suitable steps and note ΔVo and Δ t
6. Find the slew rate (SR: ΔVo/Δt) for different frequency

SL NO FREQUENCY CHANGE OF CHANGE OF CHANGE OF MEAN (Δt) SLEW RATE

OUTPIT TIME(Δt) TIME(Δt) ΔVo/Δt
VOLTAGE for rising for falling IN v/µs
(ΔVo) slope slope

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 57 / 58

 Basic Electronics Laboratory (ECEN1011)

CONCLUSION:

Heritage Institute of Technology, Kolkata, Department of Electronics and Communication Engineering 58 / 58