U6264A

Standard 8K x 8 SRAM
Features p ESD protection > 2000 V DQ0 - DQ7. After the address
(MIL STD 883C M3015.7) change, the data outputs go High-Z
p 8192 x 8 bit static CMOS RAM p Latch-up immunity > 100 mA until the new read information is
p 70 and 100 ns Access Times p Packages: PDIP28 (600 mil) available. The data outputs have no
p Common data inputs and SOP28 (300 mil) preferred state. If the memory is
outputs SOP28 (330 mil) driven by CMOS levels in the active
p Three-state outputs state, and if there is no change of
p Typ. operating supply current Description the address, data input and control
70 ns: 45 mA signals W or G, the operating cur-
100 ns: 37 mA The U6264A is a static RAM manu- rent (at IO = 0 mA) drops to the
p Data retention current factured using a CMOS process value of the operating current in the
at 3 V: < 10 µA (standard) technology with the following ope- Standby mode. The Read cycle is
p Standby current standard < 30 µA rating modes: finished by the falling edge of E2 or
p Standby current low power - Read - Standby W, or by the rising edge of E1,
(L) < 10 µA - Write - Data Retention respectively.
p Standby current very low power The memory array is based on a Data retention is guaranteed down
(LL) < 1 µA 6-transistor cell. to 2 V. With the exception of E2, all
p Standby current for LL-version The circuit is activated by the rising inputs consist of NOR gates, so that
at 25 °C and 5 V: typ. 50 nA edge of E2 (at E1 = L), or the falling no pull-up/pull-down resistors are
p TTL/CMOS-compatible edge of E1 (at E2 = H). The required. This gate circuit allows to
p Automatic reduction of power address and control inputs open achieve low power standby require-
dissipation in long Read or Write simultaneously. According to the ments by activation with TTL-levels
cycles information of W and G, the data too.
p Power supply voltage 5 V inputs, or outputs, are active. If the circuit is inactivated by
p Operating temperature ranges: During the active state (E1 = L and E2 = L, the standby current (TTL)
0 to 70 °C E2 = H), each address change drops to 150 µA typ.
-25 to 85 °C leads to a new Read or Write cycle.
-40 to 85 °C In a Read cycle, the data outputs
p Quality assessment according to are activated by the falling edge of
CECC 90000, CECC 90100 and G, afterwards the data word read
CECC 90111 will be available at the outputs

Pin Configuration Pin Description

n.c. 1 28 VCC
A12 2 27 W (WE)
A7 3 26 E2 (CE2)
A6 4 25 A8 Signal Name Signal Description
A5 5 24 A9 A0 - A12 Address Inputs
A4 6 23 A11 DQ0 - DQ7 Data In/Out
A3 7 PDIP 22 G (OE)
E1 Chip Enable 1
A2 8 SOP 21 A10
E2 Chip Enable 2
A1 9 20 E1 (CE1)
G Output Enable
A0 10 19 DQ7
W Write Enable
DQ0 11 18 DQ6
VCC Power Supply Voltage
DQ1 12 17 DQ5
DQ2 16 VSS Ground
13 DQ4
VSS 14 15 n.c. not connected
DQ3

Top View

December 12, 1997 1

This datasheet can be found on https://www.jotrin.com
U6264A
Block Diagram
A4

Row Decoder
Row Address
A5 Memory Cell
A6 Array

Inputs
A7
A8 256 Rows x
A9 256 Columns
A11
A12

Column Decoder
Column Address
A0
A1

Inputs
A2 DQ0
A3 Sense Amplifier/ DQ1

Common Data I/O

Write Control Logic
A10 DQ2
DQ3
DQ4

Address DQ5
Change Clock
Generator DQ6
Detector
DQ7

E2 VCC VSS W G
1
E1

Truth Table

Operating Mode E1 E2 W G DQ0 - DQ7

Standby/not * L * * High-Z
selected H * * * High-Z

Internal Read L H H H High-Z

Read L H H L Data Outputs Low-Z

Write L H L * Data Inputs High-Z

* H or L

Characteristics
All voltages are referenced to V SS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V I, as well as
input levels of V IL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the tdis -times, in which cases transition is measured ± 200 mV from steady-state voltage.

Maximum Ratings Symbol Min. Max. Unit

Power Supply Voltage V CC -0.3 7 V

Input Voltage VI -0.3 VCC + 0.5 V

Output Voltage VO -0.3 VCC + 0.5 V

Power Dissipation PD - 1 W

Operating Temperature C-Type Ta 0 70 °C

G-Type -25 85 °C
K-Type -40 85 °C

Storage Temperature Tstg -55 125 °C

2 December 12, 1997

 U6264A
Recommended
Symbol Conditions Min. Max. Unit
Operating Conditions

Power Supply Voltage VCC 4.5 5.5 V

Data Retention Voltage V CC(DR) 2.0 V

Input Low Voltage* VIL -0.3 0.8 V

Input High Voltage VIH 2.2 VCC + 0.3 V

* -2 V at Pulse Width 10 ns

Electrical Characteristics Symbol Conditions Min. Max. Unit

Supply Current - Operating Mode ICC(OP) VCC = 5.5 V

VIL = 0.8 V
VIH = 2.2 V

Standard tcW = 70 ns 70 mA
tcW = 100 ns 60 mA

Low Power (L) tcW = 70 ns 70 mA

tcW = 100 ns 60 mA

Very Low Power (LL) tcW = 70 ns 55 mA

tcW = 100 ns 45 mA

Supply Current - Standby Mode ICC(SB) VCC = 5.5 V

(CMOS level) VE1 = VE2 = VCC - 0.2 V
or VE2 = 0.2 V
Standard 30 µA
Low Power (L) 10 µA
Very Low Power (LL) 1 µA

Supply Current - Standby Mode ICC(SB)1 VCC = 5.5 V

(TTL level) VE1 = VE2 = 2.2 V
or VE2 = 0.2 V
Standard 5 mA
Low Power (L) 5 mA
Very Low Power (LL) 3 mA

Supply Current - Data Retention ICC(DR) VCC(DR) = 3V

Mode VE1 = VE2 = VCC(DR) - 0.2 V
or VE2 = 0.2 V

Standard 10 µA
Low Power (L) 10 µA
Very Low Power (LL) 1 µA

December 12, 1997 3

U6264A
Electrical Characteristics Symbol Conditions Min. Max. Unit

Output High Voltage VOH VCC = 4.5 V 2.4 V

IOH = -1.0 mA
Output Low Voltage VOL VCC = 4.5 V 0.4 V
IOL = 3.2 mA

Input Leakage Current

Standard &
Low Power (L) High IIH VCC = 5.5 V 2 µA
VIH = 5.5 V
Low IIL VCC = 5.5 V -2 µA
VIL = 0V

Very Low Power (LL) High IIH VCC = 5.5 V 1 µA

VIH = 5.5 V
Low IIL VCC = 5.5 V -1 µA
VIL = 0V
Output High Current IOH VCC = 4.5 V -1 mA
VOH = 2.4 V
Output Low Current IOL VCC = 4.5 V 3.2 mA
VOL = 0.4 V

Output Leakage Current

Standard &
Low Power (L)
High at Three-State Outputs IOHZ VCC = 5.5 V 2 µA
VOH = 5.5 V
Low at Three-State Outputs IOLZ VCC = 5.5 V -2 µA
VOL = 0V
Very Low Power (LL)
High at Three-State Outputs IOHZ VCC = 5.5 V 1 µA
VOH = 5.5 V
Low at Three-State Outputs IOLZ VCC = 5.5 V -1 - µA
VOL = 0V

4 December 12, 1997

 U6264A
Symbol Min. Max. Unit
Switching Characteristics
Alt. IEC 07 10 07 10

Time to Output in Low-Z t LZ tt(QX) 5 5 10 10 ns

Cycle Time
Write Cycle Time tWC tcW 70 100 ns
Read Cycle Time tRC tcR 70 100 ns

Access Time
E1 LOW or E2 HIGH to Data Valid tACE ta(E) - - 70 100 ns
G LOW to Data Valid tOE ta(G) - - 40 50 ns
Address to Data Valid tAA ta(A) - - 70 100 ns

Pulse Widths
Write Pulse Width tWP tw(W) 50 70 ns
Chip Enable to End of Write tCW tw(E) 65 90 ns

Setup Times
Address Setup Time tAS tsu(A) 0 0 ns
Chip Enable to End of Write tCW tsu(E) 65 90 ns
Write Pulse Width tWP tsu(W) 50 70 ns
Data Setup Time tDS tsu(D) 35 40 ns

Data Hold Time tDH th(D) 0 0 ns

Address Hold from End of Write tAH th(A) 0 0 ns

Output Hold Time from Address tOH tv(A) 5 5 ns

Change

E1 HIGH or E2 LOW to Output in tHZCE tdis(E) 0 0 25 35 ns

High-Z
W LOW to Output in High-Z tHZWE tdis(W) 0 0 30 35 ns
G HIGH to Output in High-Z tHZOE tdis(G) 0 0 25 35 ns

Data Retention Mode E1-Controlled Data Retention Mode E2-Controlled

VCC VCC
4.5 V 4.5 V

VCC(DR) ≥ 2 V VCC(DR) ≥ 2 V
E2
2.2 V 2.2 V tDR Data Retention trec
tDR Data Retention trec E1
0.8 V VE2(DR) ≤ 0.2 V 0.8 V
0V 0

VE2(DR) ≥ VCC(DR) - 0.2 V or VE2(DR) ≤ 0.2 V

V CC(DR) - 0.2 V ≤ VE1(DR) ≤ VCC(DR) + 0.3 V

Chip Deselect to Data Retention Time tDR: min 0 ns

Operating Recovery Time trec: min tcR

December 12, 1997 5

U6264A
Test Configuration for Functional Check

5V
A0 VCC
A1
A2
A3 DQ0
A4

Input level according to the

relevant test measurement
DQ1 960

ment of all 8 output pins

Simultaneous measure-
VIH A5 DQ2
A6 DQ3
A7 DQ4
A8 DQ5
A9 DQ6
VIL A10 DQ7
A11 VO
A12

E1 30 pF1)
E2
W 510
G VSS

1) In measurement of tdis(E), tdis(W), tdis(G) the capacitance is 5 pF.

Capacitance Conditions Symbol Min. Max. Unit

VCC = 5.0 V
Input Capacitance CI 8 pF
VI = VSS

f = 1 MHz
Output Capacitance CO 10 pF
Ta = 25 °C

All pins not under test must be connected with ground by capacitors.

IC Code Numbers

Example
U6264A D G 07 L

Type
Package Internal Code
D = PDIP
S = SOP (330 mil)
S1 = SOP (300 mil)
Operating Temperature Range Power Consumption
C = 0 to 70 °C = Standard
G = -25 to 85 °C L = Low Power
K = -40 to 85 °C Access Time LL = Very Low Power
07 = 70 ns
10 = 100 ns

The date of manufacture is given by the last 4 digits of the mark, the first 2 digits indicating the year, and the last 2
digits the calendar week.

6 December 12, 1997

 U6264A
Read Cycle 1 (during Read cycle: E1 = G = VIL, E2 = W = VIH)

tcR

Ai Addresses Valid
ta(A )
AAAAAAAAAAA AAAAAAA
DQi Previous
Data Valid
AAAA
AAAAAAAA
AAAAAAA
AAA
Output Data
Valid
AAAA
AAAAAAA
AAA
Output
tv(A ) AAAAAAAAAAA AAAAAAA

Read Cycle 2 (during Read cycle: W = VIH)

tcR

Ai Addresses Valid
tsu(A) ta(E)
tt(QX )
E1 tdis(E)
ta(E)
tsu(A)
tdis(E)
E2 tt(QX)

ta(G)
G tdis(G)
tt(QX)
DQi High-Z AAAA
AAAAAAAA
AAAAAAA
AAA Output Data
Output AAAA
AAAAAAAA
AAAAAAA
AAA Valid

Write Cycle 1 (W-controlled)

tcW

Ai Addresses Valid
tsu(E) th(A)
AAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA AAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
E1 AA AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tsu(E)
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
E2 AAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tsu(A) tw(W)

W
tsu(D) th(D)
DQi Input Data
Input Valid
tdis(W)
tt(QX )
AAAA AAAA
DQi High-Z AAAA AAAAAAA
AAA
AAAA
Output AAAAAAAA
AAAAAAA
AAA

AAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
G AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA

December 12, 1997 7

U6264A
Write Cycle 2 (E1-controlled)

tcW

Ai Addresses Valid
tsu(A) tw(E) th(A )

E1
tsu(E)
AAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
E2 AAAA
AAAAAAAA
AAAAAAA
AAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tsu(W)
AAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
W AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAA tsu(D)
AAAAAAAAAAAA
t
AAAAAAAAAAAAAAAAAAAA
h(D)
DQi Input Data
Input tdis(W) Valid
tt(QX )
DQi High-Z
Output

AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
G AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA

Write Cycle 3 (E2-controlled)

tcW

Ai Addresses Valid
tsu(E) th(A )
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
E1 AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tsu(A) tw(E)

E2
tsu(W)
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
W AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tsu(D) th(D)
DQi Input Data
Input tdis(W) Valid
tt(QX )
DQi High-Z
Output

AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
G AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA

AAAA AAAA AAAA AA AAAA AAAA AAAA AA

AAAA
AAAA AAAA
AAAA AAAA
AAAA A AAAA
AAAA AAAA
AAAA AAAA
AAAA A
AAAA L- or H-level
AAAAAAAAAAAAAA
AAAA AAAA AAAA
AAAAAAAAAAAAAA
undefined AAAA AAAA

8 December 12, 1997

 Memory Products 1998
Standard 8K x 8 SRAM U6264A

LIFE SUPPORT POLICY

ZMD products are not designed, intended, or authorized for use as components in
systems intend for surgical implant into the body, or other applications intended to
support or sustain life, or for any other application in which the failure of the ZMD
product could create a situation where personal injury or death may occur.
Components used in life-support devices or systems must be expressly authorized
by ZMD for such purpose.

The information describes the type of component and shall not be considered as
assured characteristics.

Terms of delivery and rights to change design reserved.

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