DS1220Y

16k Nonvolatile SRAM

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FEATURES PIN ASSIGNMENT

10 years minimum data retention in the
A7 VCC
absence of external power 1 24
A6

Data is automatically protected during power A5
2 23 A8
A9
3 22
loss A4 4 21 WE

Directly replaces 2k x 8 volatile static RAM A3 5 20 OE
A2 19 A10
or EEPROM A1
6
CE

Unlimited write cycles A0
7
8
18
17 DQ7

Low-power CMOS DQ0
9 16 DQ6

JEDEC standard 24-pin DIP package DQ1 10 15 DQ5

Read and write access times as fast as 100 ns DQ2 11 14 DQ4
12

Full ±10% operating range GND 13 DQ3

Optional industrial temperature range of
-40°C to +85°C, designated IND 24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED

PIN DESCRIPTION
A0-A10 - Address Inputs
DQ0-DQ7 - Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC - Power (+5V)
GND - Ground

DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.

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 DS1220Y
READ MODE
The DS1220Y executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 11 address inputs
(A0-A10) defines which of the 2048 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing
that CE and OE access times are also satisfied. If CE and OE access times are not satisfied, then data
access must be measured from the later-occurring signal and the limiting parameter is either tCO for CE or
tOE for OE rather than address access.

WRITE MODE
The DS1220Y executes a write cycle whenever the WE and CE signals are active (low) after address
inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write
cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be
kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time
(tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active)
then WE will disable the outputs in tODW from its falling edge.

DATA RETENTION MODE

The DS1220Y provides full-functional capability for VCC greater than 4.5 volts and write protects at 4.25
nominal. Data is maintained in the absence of VCC without any additional support circuitry. The
DS1220Y constantly monitors VCC. Should the supply voltage decay, the NV SRAM automatically write
protects itself, all inputs become “don’t care,” and all outputs become high-impedance. As VCC falls
below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to
retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit
connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can
resume after VCC exceeds 4.5 volts.

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 DS1220Y
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground -0.3V to +7.0V
Operating Temperature 0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 seconds

∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS (TA : See Note 10)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Power Supply Voltage VCC 4.5 5.0 5.5 V
Input Logic 1 VIH 2.2 VCC V
Input Logic 0 VIL 0.0 +0.8 V

DC ELECTRICAL CHARACTERISTICS (TA : See Note 10; VCC = 5V ± 10%)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current IIL -1.0 +1.0 µA
I/O Leakage Current IIO -1.0 +1.0 µA
CE ≥ VIH ≤ VCC
Output Current @ 2.4V IOH -1.0 mA
Output Current @ 0.4V IOL 2.0 mA
Standby Current CE =2.2V ICCS1 3.0 7.0 mA
Standby Current CE =VCC -0.5V ICCS2 2.0 4.0 mA
Operating Current tCYC= 200ns ICCO1 75 mA
(Commercial)
Operating Current tCYC=200ns ICCO1 85 mA
(Industrial)
Write Protection Voltage VTP 4.25 V

CAPACITANCE (T A = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance CIN 5 10 pF
Input/Output Capacitance CI/O 5 12 pF

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 DS1220Y
AC ELECTRICAL CHARACTERISTICS (TA : See Note 10; VCC =5.0V ± 10%)
DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
PARAMETER SYM UNITS NOTE
MIN MAX MIN MAX MIN MAX MIN MAX
Read Cycle Time tRC 100 120 150 200 ns
Access Time tACC 100 120 150 200 ns
OE to Output 50 60 70 100 ns
tOE
Valid
CE to Output 100 120 150 200 ns
tCO
Valid
OE or CE to 5 5 5 5 ns 5
tCOE
Output Active
Output High Z
tOD 35 35 35 35 ns 5
from Deslection
Output Hold from
tOH 5 5 5 5 ns
Address Change
Write Cycle Time tWC 100 120 150 200 ns
Write Pulse Width tWP 75 90 100 150 ns 3
Address Setup
tAW 0 0 0 0 ns
Time
Write Recovery tWR1 0 0 0 0 ns 12
Time tWR2 10 10 10 10 ns 13
Output High Z
tODW 35 35 35 35 ns 5
from WE
Output Active
tOEW 5 5 5 5 ns 5
from WE
Data Setup Time tDS 40 50 60 80 ns 4
Data Hold Time tDH1 0 0 0 0 ns 12
tDH2 10 10 10 10 ns 13

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 DS1220Y
READ CYCLE

SEE NOTE 1

WRITE CYCLE 1

SEE NOTES 2, 3, 4, 6, 7, 8 AND 12

WRITE CYCLE 2

SEE NOTES 2, 3, 4, 6, 7, 8 AND 13

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 DS1220Y
POWER-DOWN/POWER-UP CONDITION

SEE NOTE 11

POWER-DOWN/POWER-UP TIMING
PARAMETER SYMBOL MIN MAX UNITS NOTES
CE at VIH before Power-Down tPD 0 µs 11
VCC Slew from VTP to 0V tF 100 µs
VCC Slew from 0V to VTP tR 0 µs
CE at VIH after Power-Up tREC 2 ms
(TA = 25°C)
PARAMETER SYMBOL MIN MAX UNITS NOTES
Expected Data Retention Time tDR 10 years 9

WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.

NOTES:
1. WE is high for a read cycle.

2. OE = VIH or VIL . If OE = VIH during a write cycle, the output buffers remain in a high impedance
state.

3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.

4. tDS are measured from the earlier of CE or WE going high.

5. These parameters are sampled with a 5 pF load and are not 100% tested.

6. If the CE low transition occurs simultaneously with or later than the WE low transition in write
cycle 1, the output buffers remain in a high impedance state during this period.

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 DS1220Y
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.

8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.

9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected tDR is defined as starting at the date of
manufacture.

10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.

11. In a power-down condition the voltage on any pin may not exceed the voltage of VCC .

12. tWR1 , tDH1 are measured from WE going high.

13. tWR2 , tDH2 are measured from CE going high.

14. DS1220Y modules are recognized by Underwriters Laboratory (U.L.) under file E99151 (R).

DC TEST CONDITIONS AC TEST CONDITIONS

Outputs open. Output Load: 100pF + 1TTL Gate
All voltages are referenced to ground. Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns

ORDERING INFORMATION

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 DS1220Y
DS1220Y NONVOLATILE SRAM, 24-PIN 720-MIL EXTENDED MODULE
PKG 24-PIN
DIM MIN MAX
A IN. 1.320 1.340
MM 33.53 34.04
B IN. 0.695 0.720
MM 17.65 18.29
C IN. 0.390 0.415
MM 9.91 10.54
D IN. 0.100 0.130
MM 2.54 3.30
E IN. 0.017 0.030
MM 0.43 0.76
F IN. 0.120 0.160
MM 3.05 4.06
G IN. 0.090 0.110
MM 2.29 2.79
H IN 0.590 0.630
MM 14.99 16.00
J IN. 0.008 0.012
MM 0.20 0.30
K IN. 0.015 0.021
MM 0.38 0.53

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