Scribd Logo
Upload

Welcome to Scribd!

  • 24 views

    ST 2N5550 / 2N5551: NPN Silicon Epitaxial Planar Transistors

    Uploaded by

    Lu Hoa
    The document provides specifications for the ST 2N5550 and ST 2N5551 NPN silicon epitaxial planar transistors intended for general purpose, high voltage amplifier applications. It lists absolute maximum ratings, characteristics at 25°C, and other parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    ST 2N5550 / 2N5551: NPN Silicon Epitaxial Planar Transistors

    Uploaded by

    Lu Hoa
    24 views3 pages
    The document provides specifications for the ST 2N5550 and ST 2N5551 NPN silicon epitaxial planar transistors intended for general purpose, high voltage amplifier applications. It lists absolute maximum ratings, characteristics at 25°C, and other parameters.

    Original Title

    2N555

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document provides specifications for the ST 2N5550 and ST 2N5551 NPN silicon epitaxial planar transistors intended for general purpose, high voltage amplifier applications. It lists absolute maximum ratings, characteristics at 25°C, and other parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views3 pages

    ST 2N5550 / 2N5551: NPN Silicon Epitaxial Planar Transistors

    Uploaded by

    Lu Hoa
    The document provides specifications for the ST 2N5550 and ST 2N5551 NPN silicon epitaxial planar transistors intended for general purpose, high voltage amplifier applications. It lists absolute maximum ratings, characteristics at 25°C, and other parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    ST 2N5550 / 2N5551

    NPN Silicon Epitaxial Planar Transistors

    for general purpose, high voltage amplifier


    applications.

    As complementary types the PNP transistors


    ST 2N5400 and ST 2N5401 are recommended.

    On special request, these transistors can be


    manufactured in different pin configurations.

    TO-92 Plastic Package


    Weight approx. 0.19g

    Absolute Maximum Ratings (Ta = 25 OC)

    Parameter Symbol Value Unit


    Collector Emitter Voltage ST 2N5550 VCEO 140 V
    ST 2N5551 VCEO 160 V
    Collector Base Voltage ST 2N5550 VCBO 160 V
    ST 2N5551 VCBO 180 V
    Emitter Base Voltage VEBO 6 V
    Collector Current IC 600 mA
    1)
    Power Dissipation Ptot 625 mW
    o
    Junction Temperature Tj 150 C
    o
    Storage Temperature Range TS - 55 to + 150 C
    1)
    Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

    SEMTECH ELECTRONICS LTD.


    (Subsidiary of Sino-Tech International Holdings Limited, a company
    listed on the Hong Kong Stock Exchange, Stock Code: 724)
    ®
    Dated : 10/05/2006
    ST 2N5550 / 2N5551

    Characteristics at Tamb = 25 OC
    Parameter Symbol Min. Max. Unit
    DC Current Gain
    at VCE = 5 V, IC = 1 mA ST 2N5550 hFE 60 - -
    ST 2N5551 hFE 80 - -
    at VCE = 5 V, IC = 10 mA ST 2N5550 hFE 60 250 -
    ST 2N5551 hFE 80 250 -
    at VCE = 5 V, IC = 50 mA ST 2N5550 hFE 20 - -
    ST 2N5551 hFE 30 - -
    Collector Emitter Breakdown Voltage
    at IC = 1 mA ST 2N5550 V(BR)CEO 140 - V
    ST 2N5551 V(BR)CEO 160 - V
    Collector Base Breakdown Voltage
    at IC = 100 µA ST 2N5550 V(BR)CBO 160 - V
    ST 2N5551 V(BR)CBO 180 - V
    Emitter Base Breakdown Voltage
    V(BR)EBO 6 - V
    at IE = 10 µA
    Collector Cutoff Current
    at VCB = 100 V ST 2N5550 ICBO - 100 nA
    at VCB = 120 V ST 2N5551 ICBO - 50 nA
    Emitter Cutoff Current
    IEBO - 50 nA
    at VEB = 4 V
    Collector Saturation Voltage
    at IC = 10 mA, IB = 1 mA VCE sat - 0.15 V
    at IC = 50 mA, IB = 5 mA ST 2N5550 VCE sat - 0.25 V
    ST 2N5551 VCE sat - 0.2 V
    Base Saturation Voltage
    at IC = 10 mA, IB = 1 mA VBE sat - 1 V
    at IC = 50 mA, IB = 5 mA ST 2N5550 VBE sat - 1.2 V
    ST 2N5551 VBE sat - 1 V
    Gain Bandwidth Product
    fT 100 300 MHz
    at VCE = 10 V, IC = 10 mA, f = 100 MHz
    Collector Base Capacitance
    CCBO - 6 pF
    at VCB = 10 V, f = 1 MHz
    Noise Figure
    at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550 NF - 10 dB
    ST 2N5551 NF - 8 dB
    1)
    Thermal Resistance Junction to Ambient RthA - 200 K/W
    1)
    Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

    SEMTECH ELECTRONICS LTD.


    (Subsidiary of Sino-Tech International Holdings Limited, a company
    listed on the Hong Kong Stock Exchange, Stock Code: 724)
    ®
    Dated : 10/05/2006
    ST 2N5550 / 2N5551

    SEMTECH ELECTRONICS LTD.


    (Subsidiary of Sino-Tech International Holdings Limited, a company
    listed on the Hong Kong Stock Exchange, Stock Code: 724)
    ®
    Dated : 10/05/2006

    You might also like