Scribd Logo
Upload

Welcome to Scribd!

  • 9 views

    2SC1740

    Uploaded by

    dyus54682.511
    This document summarizes the specifications and characteristics of an NPN silicon epitaxial planar transistor for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is divided into four groups - Q, R, S, and E - according to its DC current gain. It has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, power dissipation, and storage and junction temperature. Its characteristics include DC current gain, cutoff currents, breakdown voltages, saturation voltage, gain bandwidth product, and output capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SC1740

    Uploaded by

    dyus54682.511
    9 views1 page
    This document summarizes the specifications and characteristics of an NPN silicon epitaxial planar transistor for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is divided into four groups - Q, R, S, and E - according to its DC current gain. It has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, power dissipation, and storage and junction temperature. Its characteristics include DC current gain, cutoff currents, breakdown voltages, saturation voltage, gain bandwidth product, and output capacitance.

    Original Description:

    транзистор

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document summarizes the specifications and characteristics of an NPN silicon epitaxial planar transistor for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is divided into four groups - Q, R, S, and E - according to its DC current gain. It has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, power dissipation, and storage and junction temperature. Its characteristics include DC current gain, cutoff currents, breakdown voltages, saturation voltage, gain bandwidth product, and output capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views1 page

    2SC1740

    Uploaded by

    dyus54682.511
    This document summarizes the specifications and characteristics of an NPN silicon epitaxial planar transistor for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is divided into four groups - Q, R, S, and E - according to its DC current gain. It has maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, power dissipation, and storage and junction temperature. Its characteristics include DC current gain, cutoff currents, breakdown voltages, saturation voltage, gain bandwidth product, and output capacitance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    ST 2SC1740

    NPN Silicon Epitaxial Planar Transistor


    for switching and AF amplifier applications.

    The transistor is subdivided into four groups Q, R,


    S and E. according to its DC current gain.

    On special request, these transistors can be


    manufactured in different pin configurations.

    1. Emitter 2. Collector 3. Base


    TO-92 Plastic Package

    Absolute Maximum Ratings (Ta = 25 OC)


    Parameter Symbol Value Unit
    Collector Base Voltage VCBO 60 V
    Collector Emitter Voltage VCEO 50 V
    Emitter Base Voltage VEBO 5 V
    Collector Current IC 150 mA
    Power Dissipation Ptot 300 mW
    Junction Temperature Tj 150 O
    C
    Storage Temperature Range Tstg - 55 to + 150 O
    C

    Characteristics at Ta = 25 OC
    Parameter Symbol Min. Typ. Max. Unit
    DC Current Gain
    at VCE = 6 V, IC = 1 mA Current Gain Group Q hFE 120 - 270 -
    R hFE 180 - 390 -
    S hFE 270 - 560 -
    E hFE 390 - 820 -
    Collector Base Cutoff Current
    ICBO - - 0.1 µA
    at VCB = 60 V
    Emitter Base Cutoff Current
    IEBO - - 0.1 µA
    at VEB = 5 V
    Collector Base Breakdown Voltage
    V(BR)CBO 60 - - V
    at IC = 50 µA
    Collector Emitter Breakdown Voltage
    V(BR)CEO 50 - - V
    at IC = 1 mA
    Emitter Base Breakdown Voltage
    V(BR)EBO 5 - - V
    at IE = 50 µA
    Collector Emitter Saturation Voltage
    VCE(sat) - - 0.4 V
    at IC = 50 mA, IB = 5 mA
    Gain Bandwidth Product
    fT - 180 - MHz
    at VCE = 12 V, IC = 2 mA
    Output Capacitance
    Cob - 2 3.5 pF
    at VCB = 12 V, f = 1 MHz

    Dated : 07/12/2002

    You might also like