TEA2025B

TEA2025D

STEREO AUDIO AMPLIFIER

DUAL OR BRIDGE CONNECTION MODES
FEW EXTERNAL COMPONENTS
SUPPLY VOLTAGE DOWN TO 3V
HIGH CHANNEL SEPARATION
VERY LOW SWITCH ON/OFF NOISE
MAX GAIN OF 45dB WITH ADJUST EXTER- POWERDIP 12+2+2 SO20 (12+4+4)
NAL RESISTOR
SOFT CLIPPING ORDERING NUMBERS: TEA2025B (PDIP)
THERMAL PROTECTION TEA2025D (SO)
3V < VCC < 15V
P = 2 • 1W, VCC = 6V, RL = 4Ω DESCRIPTION
P = 2 • 2.3W, VCC = 9V, RL = 4Ω The TEA2025B/D is a monolithic integrated circuit
P = 2 • 0.1W, VCC = 3V, RL = 4Ω in 12+2+2 Powerdip and 12+4+4 SO, intended for
use as dual or bridge power audio amplifier port-
able radio cassette players.
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Test Conditions Unit

VS Supply Voltage 15 V
IO Ouput Peak Current 1.5 A
TJ Junction Temperature 150 °C
Tstg Storage Temperature 150 °C

BLOCK DIAGRAM

GND(Sub) IN 1+ FEED GND GND BOOT 1 OUT 1

50Ω
THERMAL 10KΩ
PROTECT.
-
1 1
START +
5KΩ
CIRCUIT
SVR DECOUPLING VS+
BRIDGE
IN 2+ - 50Ω
2 2
+
10KΩ

50Ω

D94AU120 FEED GND GND BOOT 2 OUT 2

June 1994 1/9

TEA2025B - TEA2025D

POWERDIP 12+2+2 PIN CONNECTION (Top view)

BRIDGE 1 16 +Vs
OUT.2 2 15 OUT.1
BOOT.2 3 14 BOOT.1
GND 4 13 GND
GND 5 12 GND
FEEDBACK 6 11 FEEDBACK
IN.2 (+) 7 10 IN.1 (+)
SVR 8 9 GND (sub.)

SO 12+4+4 PIN CONNECTION (Top view)

BRIDGE 1 20 VCC
OUT 2 2 19 OUT 1
BOOT 2 3 18 BOOT 1
GND 4 17 GND
GND 5 16 GND
GND 6 15 GND
GND 7 14 GND
FEEDBACK 8 13 FEEDBACK
IN 2(+) 9 12 IN 1(+)
SVR 10 11 GND(Sub)
D94AU119

THERMAL DATA

Symbol Description SO 12+4+4 (*) PDIP 12+2+2 (**) Unit

R th j-case Thermal Resistance Junction-case Max 15 15 °C/W
Rth j-amb Thermal Resistance Junction-ambient Max 65 60 °C/W
(*) The Rth j-amb is measured with 4sq cm copper area heatsink

(**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2.

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 TEA2025B - TEA2025D

ELECTRICAL CHARACTERISTICS (Tamb = 25°C, VCC = 9V, Stereo unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VS Supply Voltage 3 12 V
IQ Quiescent Current 35 50 mA
VO Quiescent Output Voltage 4.5 V
Stereo 43 45 47
AV Voltage Gain dB
Bridge 49 51 53
∆AV Voltage Gain Difference ±1 dB
Rj Input Impedance 30 KΩ
PO Output Power (d = 10%) Stereo 8 (per channel) 9V 4Ω 1.7 2.3
9V 8Ω 1.3
6V 4Ω 0.7 1
6V 8Ω 0.6
6V 16Ω 0.25 W
6V 32Ω 0.13
3V 4Ω 0.1
3V 32Ω 0.02
12V 8Ω 2.4
9V 8Ω 4.7
6V 4Ω 2.8
Bridge 6V 8Ω 1.5 W
3V 16Ω 0.18
3V 32Ω 0.06
Stereo 0.3 1.5
d Distortion Vs = 9V; RL = 4Ω %
Bridge 0.5
SVR Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg = 0 40 46 dB
RG = 0 1.5 3
EN(IN) Input Noise Voltage 6 mV
R G = 10 4Ω 3
CT Cross-Talk f = 1KHz, Rg = 10KΩ 40 52 dB

Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9

Figure 1: Bridge Application (Powerdip) Figure 2: Stereo Application (Powerdip)

C1
C6
C10 C4

C8
C2 C5
C7
C11

C9

C3

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TEA2025B - TEA2025D

Figure 3: Supply Current vs. Supply Voltage Figure 4: Output Voltage vs. Supply Voltage
(RL = 4Ω)
I(mA) Vo(V)
8
50
7

6
40
5

4
30
3

2
20 STEREO
STEREO 1

0
10
3 6 9 12 15
3 6 9 12 15
Vs(V) Vs(V)

Figure 5: Output Power vs. Supply Voltage Figure 6: THD versus Output Power
(THD = 10%, f = 1KHz) (f = 1KHz, VS = 6V)

3.5
Po(W)
10THD(%)

2.5 Rl=8ohm
Rl=16ohm
Rl=4ohm Rl=8ohm Rl=16ohm Rl=4 OHM
2
1
1.5

1
STEREO
0.5
STEREO
0 0.1
3 6 9 12 15 0 0.2 0.4 0.6 0.8 1
Vs(V) Po(W)

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 TEA2025B - TEA2025D

APPLICATION INFORMATION The total gain of the bridge is given by:

Input Capacitor VOUT R1 R3 R1

= (1+ )
Input capacitor is PNP type allowing source to be VIN 1 R4 1
Rf+R2 + R2+R4+
referenced to ground. JWC1 JWC1
and with the suggested values (C1 = C2 = 100 µF,
In this way no input coupling capacitor is required.
Rf= 0) means:
However, a series capacitor (0.22 uF)to the input
side can be useful in case of noise due to variable Gv = 52 dB
resistor contact.
Figure 8

Bootstrap
The bootstrap connection allows to increase the
output swing.
The suggested value for the bootstrap capacitors
(100uF) avoids a reduction of the output signal
also at low frequencies and low supply voltages.

Voltage Gain Adjust

STEREO MODE
The voltage gain is determined by on-chip resis-
tors R1 and R2 together with the external RfC1
series connected between pin 6 (11) and ground.
The frequency response is given approximated
by: with first pole at f = 32 Hz
VOUT R1
= Output Capacitors.
VIN 1
Rf + R2 + The low cut off frequency due to output capacitor
JWC1
With Rf=0, C1=100 uF, the gain results 46 dB depending on the load is given by:
with pole at f=32 Hz.
THE purpose of Rf is to reduce the gain. It is rec- 1
FL =
ommended to not reduce it under 36 dB. 2 ΠCOUT • RL

with COUT 470µF and RL = 4 ohm it means F L =

BRIDGE MODE 80 Hz.
Figure 7
Pop Noise
Most amplifiers similar to TEA 2025B need exter-
nal resistors between DC outputs and ground in
order to optimize the pop on/off performance and
crossover distortion.
Figure 9

The bridge configuration is realized very easily

thanks to an internal voltage divider which pro-
vides (at pin 1) the CH 1 output signal after reduc- The TEA 2025B solution allows to save compo-
tion. It is enough to connect pin 6 (inverting input nents because of such resistors (800 ohm)are in-
of CH 2) with a capacitor to pin 1 and to connect cluded into the chip.
to ground the pin 7.

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TEA2025B - TEA2025D
- No sockets.
Stability 2) the heatsink can have a smaller factor of safety
A good layout is recommended in order to avoid compared with that of a conventional circuit.
oscillations. There is no device damage in the case of ex-
Generally the designer must pay attention on the cessive junction temperature: all that happens
following points: is that PO (and therefore Ptot) and Id are re-
duced.
- Short wires of components and short connec-
tions. APPLICATION SUGGESTION
- No ground loops. The recommended values of the components are
- Bypass of supply voltage with capacitors as those shown on stereo application circuit of
nearest as possible to the supply I.C.pin.The Fig. 2 different values can be used, the follow-
low value(poliester)capacitors must have ing table can help the designer.
good temperature and frequency charac-
teristics.

RECOMMENDED
COMPONENT PURPOSE LARGER THAN SMALLER THAN
VALUE
C1,C2 0.22µF INPUT DC
DECOUPLING IN
CASE OF SLIDER
CONTACT NOISE OF
VARIABLE
RESISTOR
C3 100µF DEGRADATION OF
RIPPLE REJECTON
SVR, INCREASE OF
THD AT LOW
FREQUENCY AND
LOW VOLTAGE
C4,C5 100µF BOOTSTRAP
C6,C7 470µF INCREASE OF LOW
OUTPUT DC
FREQUENCY CUT-
DECOUPLING
OFF
C8,C9 0.15µF FREQUENCY DANGER OF
STABILITY OSCILLATIONS
C10, C11 100µF INCREASE OF LOW
INVERTING INPUT
FREQUENCY CUT-
DC DECOUPLING
OFF

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 TEA2025B - TEA2025D

SO20 PACKAGE MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.1 0.3 0.004 0.012
a2 2.45 0.096
b 0.35 0.49 0.014 0.019
b1 0.23 0.32 0.009 0.013
C 0.5 0.020
c1 45 (typ.)
D 12.6 13.0 0.496 0.512
E 10 10.65 0.394 0.419
e 1.27 0.050
e3 11.43 0.450
F 7.4 7.6 0.291 0.299
L 0.5 1.27 0.020 0.050
M 0.75 0.030
S 8 (max.)

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TEA2025B - TEA2025D

DIP16 PACKAGE MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 20.0 0.787

E 8.80 0.346

e 2.54 0.100

e3 17.78 0.700

F 7.10 0.280

I 5.10 0.201

L 3.30 0.130

Z 1.27 0.050

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 TEA2025B - TEA2025D

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men-
tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex-
press written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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