Tea 2025
Tea 2025
Tea 2025
® TEA2025D
BLOCK DIAGRAM
50Ω
THERMAL 10KΩ
PROTECT.
-
1 1
START +
5KΩ
CIRCUIT
SVR DECOUPLING VS+
BRIDGE
IN 2+ - 50Ω
2 2
+
10KΩ
50Ω
BRIDGE 1 16 +Vs
OUT.2 2 15 OUT.1
BOOT.2 3 14 BOOT.1
GND 4 13 GND
GND 5 12 GND
FEEDBACK 6 11 FEEDBACK
IN.2 (+) 7 10 IN.1 (+)
SVR 8 9 GND (sub.)
BRIDGE 1 20 VCC
OUT 2 2 19 OUT 1
BOOT 2 3 18 BOOT 1
GND 4 17 GND
GND 5 16 GND
GND 6 15 GND
GND 7 14 GND
FEEDBACK 8 13 FEEDBACK
IN 2(+) 9 12 IN 1(+)
SVR 10 11 GND(Sub)
D94AU119
THERMAL DATA
(**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2.
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TEA2025B - TEA2025D
ELECTRICAL CHARACTERISTICS (Tamb = 25°C, VCC = 9V, Stereo unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VS Supply Voltage 3 12 V
IQ Quiescent Current 35 50 mA
VO Quiescent Output Voltage 4.5 V
Stereo 43 45 47
AV Voltage Gain dB
Bridge 49 51 53
∆AV Voltage Gain Difference ±1 dB
Rj Input Impedance 30 KΩ
PO Output Power (d = 10%) Stereo 8 (per channel) 9V 4Ω 1.7 2.3
9V 8Ω 1.3
6V 4Ω 0.7 1
6V 8Ω 0.6
6V 16Ω 0.25 W
6V 32Ω 0.13
3V 4Ω 0.1
3V 32Ω 0.02
12V 8Ω 2.4
9V 8Ω 4.7
6V 4Ω 2.8
Bridge 6V 8Ω 1.5 W
3V 16Ω 0.18
3V 32Ω 0.06
Stereo 0.3 1.5
d Distortion Vs = 9V; RL = 4Ω %
Bridge 0.5
SVR Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg = 0 40 46 dB
RG = 0 1.5 3
EN(IN) Input Noise Voltage 6 mV
RG = 10 4Ω 3
CT Cross-Talk f = 1KHz, Rg = 10KΩ 40 52 dB
Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9
C1
C6
C10
C4
C8
C2 C5
C7
C11
C9
C3
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TEA2025B - TEA2025D
Figure 3: Supply Current vs. Supply Voltage Figure 4: Output Voltage vs. Supply Voltage
(RL = 4Ω)
I(mA) Vo(V)
8
50
7
6
40
5
4
30
3
2
20 STEREO
1
STEREO
0
10
3 6 9 12 15
3 6 9 12 15
Vs(V) Vs(V)
Figure 5: Output Power vs. Supply Voltage Figure 6: THD versus Output Power
(THD = 10%, f = 1KHz) (f = 1KHz, VS = 6V)
10THD(%)
Po(W)
3.5
2.5 Rl=8ohm
Rl=16ohm
Rl=4ohm Rl=8ohm Rl=16ohm Rl=4 OHM
2
1
1.5
1
STEREO
0.5
STEREO
0 0.1
3 6 9 12 15 0 0.2 0.4 0.6 0.8 1
Vs(V) Po(W)
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TEA2025B - TEA2025D
Bootstrap
The bootstrap connection allows to increase the
output swing.
The suggested value for the bootstrap capacitors
(100uF) avoids a reduction of the output signal
also at low frequencies and low supply voltages.
5/9
TEA2025B - TEA2025D
- No sockets.
Stability 2) the heatsink can have a smaller factor of safety
A good layout is recommended in order to avoid compared with that of a conventional circuit.
oscillations. There is no device damage in the case of ex-
Generally the designer must pay attention on the cessive junction temperature: all that happens
following points: is that PO (and therefore Ptot) and Id are re-
duced.
- Short wires of components and short connec-
tions. APPLICATION SUGGESTION
- No ground loops. The recommended values of the components are
- Bypass of supply voltage with capacitors as those shown on stereo application circuit of
nearest as possible to the supply I.C.pin.The Fig. 2 different values can be used, the follow-
low value(poliester)capacitors must have
ing table can help the designer.
good temperature and frequency charac-
teristics.
RECOMMENDED
COMPONENT PURPOSE LARGER THAN SMALLER THAN
VALUE
C1,C2 0.22µF INPUT DC
DECOUPLING IN
CASE OF SLIDER
CONTACT NOISE OF
VARIABLE
RESISTOR
C3 100µF DEGRADATION OF
RIPPLE REJECTON
SVR, INCREASE OF
THD AT LOW
FREQUENCY AND
LOW VOLTAGE
C4,C5 100µF BOOTSTRAP
C6,C7 470µF INCREASE OF LOW
OUTPUT DC
FREQUENCY CUT-
DECOUPLING
OFF
C8,C9 0.15µF FREQUENCY DANGER OF
STABILITY OSCILLATIONS
C10, C11 100µF INCREASE OF LOW
INVERTING INPUT
FREQUENCY CUT-
DC DECOUPLING
OFF
6/9
TEA2025B - TEA2025D
mm inch
DIM. OUTLINE AND
MECHANICAL DATA
MIN. TYP. MAX. MIN. TYP. MAX.
e 1.27 0.050
L
h x 45˚
B e K A1 C
H
20 11
1 0
1
SO20MEC
7/9
TEA2025B - TEA2025D
mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX. MECHANICAL DATA
a1 0.51 0.020
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
DIP16
Z 1.27 0.050
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TEA2025B - TEA2025D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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