kst3906 Fairchild PDF
kst3906 Fairchild PDF
kst3906 Fairchild PDF
KST3906
3
General Purpose Transistor
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -200 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature 150 °C
Marking
2A
VCE = -1V
IC = 10 IB
hFE, DC CURRENT GAIN
10 -0.1
VCE(sat)
1 -0.01
-1 -10 -100 -1000 -0.1 -1 -10 -100
100 1000
CURRENT GAIN BANDWIDTH PRODUCT
IE = 0
f = 1MHz VCE = -20V
Cob [pF], CAPACITANCE
10
fT[MHz],
100
0.1 10
-0.1 -1 -10 -100
-1 -10 -100
SOT-23
0.20 MIN
0.45~0.60
0.40 ±0.03
±0.10
±0.10
1.30
2.40
0.03~0.10
0.38 REF
0.96~1.14
2.90 ±0.10
0.97REF
Dimensions in Millimeters
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