Scribd Logo
Upload

Welcome to Scribd!

  • 354 views

    Programmable Unijunction Transistor

    Uploaded by

    Baquiran John Paul Baquiran
    The programmable unijunction transistor (PUT) is a three-terminal semiconductor device similar to a unijunction transistor but programmable. PUTs are triggered into conduction when the anode voltage exceeds the gate voltage. The PUT's intrinsic standoff ratio, which determines its peak voltage and negative resistance region characteristics, can be set through two external resistors. PUTs are commonly used in relaxation oscillators, thyristor firing circuits, pulse circuits, and timing circuits.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd

    Programmable Unijunction Transistor

    Uploaded by

    Baquiran John Paul Baquiran
    354 views2 pages
    The programmable unijunction transistor (PUT) is a three-terminal semiconductor device similar to a unijunction transistor but programmable. PUTs are triggered into conduction when the anode voltage exceeds the gate voltage. The PUT's intrinsic standoff ratio, which determines its peak voltage and negative resistance region characteristics, can be set through two external resistors. PUTs are commonly used in relaxation oscillators, thyristor firing circuits, pulse circuits, and timing circuits.

    Original Title

    Programmable unijunction transistor

    Copyright

    © © All Rights Reserved

    Available Formats

    DOCX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The programmable unijunction transistor (PUT) is a three-terminal semiconductor device similar to a unijunction transistor but programmable. PUTs are triggered into conduction when the anode voltage exceeds the gate voltage. The PUT's intrinsic standoff ratio, which determines its peak voltage and negative resistance region characteristics, can be set through two external resistors. PUTs are commonly used in relaxation oscillators, thyristor firing circuits, pulse circuits, and timing circuits.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    354 views2 pages

    Programmable Unijunction Transistor

    Uploaded by

    Baquiran John Paul Baquiran
    The programmable unijunction transistor (PUT) is a three-terminal semiconductor device similar to a unijunction transistor but programmable. PUTs are triggered into conduction when the anode voltage exceeds the gate voltage. The PUT's intrinsic standoff ratio, which determines its peak voltage and negative resistance region characteristics, can be set through two external resistors. PUTs are commonly used in relaxation oscillators, thyristor firing circuits, pulse circuits, and timing circuits.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 2

    Programmable unijunction transistor (PUT) is a three-lead electronic semiconductor

    device with which is similar in characteristic to unijunction transistor except that it is


    programmable. Programmable unijunction transistors (PUT) are three-terminal thyristors that
    are triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
    The PUT is similar to the unijunction transistor (UJT), but its intrinsic standoff ratio can be set by
    two external resistors.
    Pin configuration: anode, gate and cathode

    PUT characteristics.
    PUT characteristics is essentially a plot between the anode voltage Va and anode
    current Ia of the PUT. The typical biasing diagram and characteristics plot of a PUT is
    shown below.

    Typically the anode of the PUT is connected to a positive voltage and the cathode is
    connected to the ground. The gate is connected to the junction of the two external
    resistor R1 and R2 which forms a voltage divider network. It is the value of these two
    resistors that determines the intrinsic standoff ratio(η) and peak voltage (Vp) of the PUT.

    When the anode to cathode voltage (Va)is increased the anode current will also get
    increased and the  junction behaves like a typical P-N junction. But the Va cannot be
    increased beyond a particular point. At this point sufficient number of charges are
    injected and the junction starts to saturate. Beyond this point the anode current (Ia)
    increases and the anode voltage (Va) decreases. This is equal to a negative resistance
    scenario and this negative resistance region in the PUT characteristic is used in
    relaxation oscillators. When the anode voltage (Va) is reduced to a particular level
    called “Valley Point”, the device becomes fully saturated and no more decrease in Va is
    possible. There after the device behaves like a fully saturated P-N junction.

    Peak voltage (Vp): It is the anode to cathode voltage after which the PUT jumps into
    the negative resistance region. The peak voltage Vp will be usually one diode drop
    (0.7V) plus the gate to cathode voltage (Vg). Peak voltage can be expressed using the
    equation:

    Vp = 0.7V + Vg = 0.7V + VR1 = 0.7V + ηVbb . Where  η is the intrinsic standoff ratio
    and Vbb is the total voltage across the external resistor network.

    Intrinsic standoff ratio ( η) : Intrinsic standoff ratio of a PUT is the ratio of the external
    resistor R1 to the sum of R1 and R2.  It helps us to predict how much voltage will be
    dropped across the gate and cathode for a given Vbb. The intrinsic standoff ratio can be
    expressed using the equation:

    η = R1/(R1+R2).

    The main application ofprogrammable UJT are relaxation oscillators , thyristor firing, pulse
    circuits and timing circuits.

    You might also like