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    Analog & Digital Electronics: Course No: PH-218 Lecture 2: PN Junction

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    RahulMondol
    1) The document discusses the basics of PN junction diodes, including why they are important semiconductor devices, how PN junctions are formed, and the current components under forward and reverse biasing. 2) A PN junction is formed when a P-type semiconductor is brought into contact with an N-type semiconductor. This creates a depletion region near the junction with no free carriers. 3) Under forward bias, current increases exponentially with voltage. Under reverse bias, current is small and remains nearly constant.

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    Analog & Digital Electronics: Course No: PH-218 Lecture 2: PN Junction

    Uploaded by

    RahulMondol
    74 views15 pages
    1) The document discusses the basics of PN junction diodes, including why they are important semiconductor devices, how PN junctions are formed, and the current components under forward and reverse biasing. 2) A PN junction is formed when a P-type semiconductor is brought into contact with an N-type semiconductor. This creates a depletion region near the junction with no free carriers. 3) Under forward bias, current increases exponentially with voltage. Under reverse bias, current is small and remains nearly constant.

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    1) The document discusses the basics of PN junction diodes, including why they are important semiconductor devices, how PN junctions are formed, and the current components under forward and reverse biasing. 2) A PN junction is formed when a P-type semiconductor is brought into contact with an N-type semiconductor. This creates a depletion region near the junction with no free carriers. 3) Under forward bias, current increases exponentially with voltage. Under reverse bias, current is small and remains nearly constant.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views15 pages

    Analog & Digital Electronics: Course No: PH-218 Lecture 2: PN Junction

    Uploaded by

    RahulMondol
    1) The document discusses the basics of PN junction diodes, including why they are important semiconductor devices, how PN junctions are formed, and the current components under forward and reverse biasing. 2) A PN junction is formed when a P-type semiconductor is brought into contact with an N-type semiconductor. This creates a depletion region near the junction with no free carriers. 3) Under forward bias, current increases exponentially with voltage. Under reverse bias, current is small and remains nearly constant.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 15

    Analog & Digital Electronics

    Course No: PH-218

    Lecture 2: PN junction

    Course Instructors:

     Dr. A. P. VAJPEYI

    Department of Physics,
    Indian Institute of Technology Guwahati, India 1
    Why P-N Junction Diode
     PN junction diode is nonlinear circuit elements and many signal processing function
    need it e.g. signal rectification .

    (i) PN junction is an important semiconductor device in itself and used in a wide variety
    of applications such as rectifiers, Clipper and Clamper circuits, Photo detectors, light
    emitting diodes (LED) and laser diode (LD) etc.

    (ii) PN junctions are an integral part of other important semiconductor devices such as
    BJTs, JFETS and MOSFETs.

    P-N Junction
     When a p-type semiconductor is brought in contact with n-type semiconductor, the
    contact surface is called p-n junction.

     Diffusion of electrons and holes from majority carrier side to minority carrier side
    until drift balances diffusion.

    2
    P-N Junction diode

    Depletion region

     Region near to the p and n junction depleted from free carriers because of the
    majority carriers diffusion ( leaving only fixed –ve and +ve ions in p and n region
    respectively).

     This internal electric field produces built-in-potentail which gives rise to the drift
    current to the minority carriers and balances the diffusion current.
    3
    1/5/2011
    Small flow up the eV0 barrier Easy flow down the potential gradient
    Small concentration
    of electrons
    n-type Conduction band

    Large concentration kT NAND


    of electrons eV0 V0 = ln 2
    Conduction band q ni
    EF

    Valence band
    Eg
    V0 = 0.7V for Si
    p-type = 0.3V for Ge

    Valence band
    Small concentration Large concentration
    of holes of holes

    Band diagram under thermal equilibrium 4


    Forward Biasing of P-N Junction diode
    A p-n Junction is said to be in Forward Bias when the P-type region is made positive
    with respect to the N-type region.

    Reverse Biasing of P-N Junction diode


    A p-n Junction is said to be in Reverse Bias when the P-type region is made negative
    with respect to the N-type region.

    In Summary: VD >0 forward bias ; VD <0 reverse bias

    5
    PN-diode: current components under different biasing

    Forward current
      eVi 
       eVi 
     
     kT   kT 
    I Forward = I 0 e − 1 ≈ I 0e
     

    Reverse current

      eVi
    −1  

    I reverse = I 0 e kT   ≈ − I 0
     

    See the direction and magnitude of of drift current carefully. Drift current
    almost remains constant as it depends mainly on number of minority carriers
    6
    PN-diode: current components under different biasing

    7
    I-V characteristics of PN Junction Diode

      eVi 
      eVi    nkT −1  
    eVi 
         
    I Forward = I 0 e  nkT 
    − 1 ≈ I 0e  nkT  I reverse = I 0 e  ≈ − I0
       
    Breakdown region:
    Rapid increase in ID when reverse bias voltage exceeds a break down voltage VZ
    8
    Breakdown mechanism is either Avlance or Zener.
    Breakdown Mechanism:

    Avalanche break down:-


    If both p-side and n-side of the diode are lightly doped, depletion region at the
    junction widens. Application of a very large electric field at the junction may rupture
    covalent bonding between electrons. Such rupture leads to the generation of a large
    number of charge carriers resulting in avalanche multiplication.

     In avalanche breakdown, VZ increases with temperature.

    Zener break down:-


    If both p-side and n-side of the diode are heavily doped, depletion region at the
    junction reduces. Application of even a small voltage at the junction ruptures
    covalent bonding and generates large number of charge carriers. Such sudden
    increase in the number of charge carriers results in zener mechanism.

     In Zener breakdown, VZ decreases with temperature

     If the maximum specified power dissipation is not exceeded, breakdown is not


    a destructive process.
    9
    Temperature Effect:

    VON varies linearly with temperature which is evidenced by the evenly


    spaced curves for increasing temperature in 25 °C increments. 10
    Temperature Effect:

     In the forward bias region, the characteristics of Si diode shift to the left
    (lower voltage) at a rate of 2.5mV/oC increase in temperature.

     Reverse saturation current is approximately doubles for every 10oC rise


    in temperature. If Is= Is1 at T = T1, then at temperature T2, Is2 is given by,
    Is2 = Is1x 2(T2 –T1)/10

    11
    Diode Approximation:

    Ideal diode 2nd approximation: 3rd approximation:


    const. voltage drop model Piecewise linear model

    When diode is forward When forward voltage is more When forward voltage is
    biased, resistance offered is than 0.7 V, for Si diode then it more than 0.7 V, for Si
    zero, When it is reverse conducts and offers zero diode then it conducts and
    biased resistance offered is resistance. The drop across the offers resistance. When
    infinity. It acts as a perfect diode is 0.7V. When reverse reverse biased it offers very
    switch biased it offers infinite high resistance but not
    resistance. infinity.

    12
    Load Line Analysis for a p-n junction diode:

    VD

    V RL

    V = VD + Id RL ; Id = (V- VD ) / RL

     The straight line represented by the above equation is known as the load line.
    The load line passes through two points, I = 0, VD = V and VD= 0, I = V / RL.

     The intersection point of load line and diode characteristics curve gives the
    operating point.
    13
    Load Line Analysis for a p-n junction diode:

    14
    Important terms used for a p-n junction diode:

    Breakdown Voltage: It is the minimum voltage at which p-n junction


    breaks down with sudden rise in reverse current.

    Knee Voltage: It is the forward voltage at which the current through the
    junction starts to increase rapidly.

    Maximum forward Current: It is the highest instantaneous forward


    current that a p-n junction can conduct without damage to the junction .

    Peak Inverse voltage (PIV): It is the maxium reverse voltage that can be
    applied to the p-n junction without damage to the junction .

    Maximum power rating: It is the maximum power that can be dissipated


    at the junction without damaging it.

     If the maximum specified power dissipation is not exceeded,


    breakdown is not a destructive process.
    15

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